TO-5 METAL CASE FOR TRANSISTOR Search Results

Contextual Info: TYPE 2N118 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DL-S 5 8 8 9 7 , MARCH 1 9 5 8 18 to 40 beta spread Specifically desigaed for high gaia at high teaiperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grains.

BSS44

Abstract: P008B
Contextual Info: BSS44 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.

BSS44

Contextual Info: BSS44  SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.

BSS44

Contextual Info: BSS44 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.

Contextual Info: BSS44 SILICON PNP TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A. INTERNAL SCHEMATIC DIAGRAM

P008B

Abstract: "PNP Transistor" BSS44
Contextual Info: BSS44 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.

bss44

Contextual Info: BSS44 SILICON NPN TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A. TO-39 INTERNAL SCHEMATIC DIAGRAM

BSS44

Contextual Info: BSS44 SILICON NPN TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A. TO-39

2N118

Abstract: X10-4 I15-0 ScansUX7
Contextual Info: TYPE 2N118 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN N O . D L -S 5 8 8 9 7 , M A R C H 1 9 5 8 18 to 4 0 beta sprawl SpedficaHy designa i for Ugh gaia at htgii t— porat— s mochanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

TRANSISTOR b 772 p

Abstract: bfw 16 transistor BFW 72 TRANSISTOR BFW 16
Contextual Info: E5C D • fi235bQS 0004725 1 H S I E 6 NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF BFW 16 A is an epitaxial NPN silicon planar RF transistor In TO 39 metal case 5 C 3 DIN 41873 intended for general applications up to the GHz range, e.g. for

2N117

Abstract: 2n117 texas
Contextual Info: TYPE 2N117 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N N O . O L -S 5 8 8 9 6 , M A R C H 19S8 9 to 20 beta spread Specifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

BCY65

Abstract: BCY65-VIII BCY65-IX BCY65-VII BCY65IX
Contextual Info: BCY65 T " 3 5 '- / I PHILIPS INTERNATIONAL SbE D 7110ÖSb DDM21D2 T Sü « P H I N SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-18 metal envelope with the collector connected to the case and designed for use in amplifier and switching applications.

2N120

Abstract: ScansUX7
Contextual Info: TYPE 2N120 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N N O . D L-S 5 8900, M A R C H 1958 76 to 333 beta spread Specifically designed for high gain at high temperatures mechanical d a ta Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

2N336

Contextual Info: TYPE 2N336 N-P-N GROWN JUNCTION SILICON TRANSISTOR B U L L E T I N N O . D L - S 5 9 1 0 3 9 , M A R C H 1959 Beta From 76 to 333 Specifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. L nit weight is approximately

bfw 106 c

Abstract: BFW16 Q62702-F319 transistor BFW 10 bfw16a
Contextual Info: E5C D fi235bQ5 Q0047ES 1 H S I E G • NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF ^^-'31-2.3 BFW 16 A is an epitaxial NPN silicon planar RF transistor in TO 39 metal case 5 C 3 DIN 41 87 3 intended for general applications up to the GHz range, e.g. for

Contextual Info: ¿57 7 ^5 3 7 005fii4fl5 T tm r" P 3 3 - 1 5 BDY57 BDY58 SGS-THOMSON iLiCTËMOtSS HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTORS S Q S-THOMSO DESCRIPTION The BDY57 and BDY58 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal case, intended for use in switching and linear applications

Transistor 5331

Abstract: BSV16 BSV17 BSV17-10 bsv16-16 BSV16-10 BSV15 BSV15-10 Silicon Epitaxial Planar Transistor philips
Contextual Info: I I N AMER PHIL I P S / D I S C R E T E t.'ÎE J> 002707b 341 I IAPX BSV15 to 17 ^ 5 3 ^ 3 1 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.

BSX46

Abstract: BSX45 Transistor BSX45-10 Transistor BSX45 BSX47 BSX47-10 IEC134 Z8239 silicon planar epitaxial transistors
Contextual Info: B S X 4 5 to 47 _ P H IL IP S INTERNATIO N AL 5bE D 711002b T - * 7 - 2 3 _ OGMEHOb 3 4 e! « P H I N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.

2N333

Abstract: ScansUX7
Contextual Info: TYPE 2N333 N-P-N G R O W N -JU N C TIO N SILICON TRANSISTOR B U L L E T I N N O . D L -S 5 9 1 0 3 6 , M A R C H 1960 Bata From 18 to 40 Specifically designed for high gain at high temperatures •Mchanleal data Welded case with glass-to-metal hermetic seal between case and leads. Unit weight is approximately

BSX45A

Contextual Info: PHILIPS INTERNATIONAL B S X 4 5 to 47 _ T - z y - z z _ 711DÖSb DGMEHÜb 3MT « P H I N SbE D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in T O -39 metal envelopes w ith the collector connected to the case. These transistors are intended for general industrial applications.

bsx46

Abstract: bsx45
Contextual Info: 3GE D • 7 ^5 ^ 3 7 ooaiobs 3 ■ /IT SGS-THOMSON ^ 7# . S G BSX45 BSX46 S-THOMSON MEDIUM POWER AMPLIFIERS DESCRIPTION The BSX45 and BSX46 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, inten­ ded for use in medium power general industrial ap­

2N4391

Abstract: 2n4393 2N4392 2N 4391 NS2N
Contextual Info: 7 1 1 0 0 5 b O D h ö D ? 1* 50b • P H I N 2N4391 to 4393 y v N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO -18 metal envelopes w ith the gate connected to the case. The transistors are intended for low power, chopper or switching,

bux41n

Contextual Info: rZ ^ 7 J S G S -T H O M S O N 5 L iO T Q K S # BUX41N HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESCRIPTIO N The BUX41N is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intented for use in switching and linear applications in military

BDY92

Contextual Info: r Z Z SGS-THOMSON ^ 7# 5 BDY90/1/2 HIGH CURRENT, HIGH SPEED TRANSISTORS D E S C R IP T IO N The BDY90, BDY91, BDY92 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal case intended for use in switching and linear appli­ cations in military and industrial equipment.