TO-5 AMPS PNP TRANSISTOR Search Results

FZT951

Abstract: FZT953 fzt853 FZT851 DSA003718
Contextual Info: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps

FZT953

Abstract: FZT853 FZT851 FZT951
Contextual Info: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps

Contextual Info: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ISSUE 3 – JUNE 94 FEATURES * 2 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 2 Amps * Spice model available C B E E-Line

741 IC

Abstract: 2N5093 741i IC 741 to 2N5415 2N3868 2N4930 2N4931 2N5091 2N5096
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 » I 1 sus VOLTS Ic (max) AMPS 2N3867 40 3 >25@2.5/3 1.3@2.5/.25 6 60 2N3868 60 3 >20@2.5/3 1.3@2.5/.25 6 60 2N4930 200 .05 20-200@.01/10 5@.01/.001 5 10* 2N4931 250 .05

2N5415

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >25@2.5/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) 1.3@2.5/.25

Transistor 2N5093

Abstract: 2N5091 7 amps pnp transistor 2N5416A 2N5096 "PNP Transistor" 2N5093 2N5094 2N5149 2N5151
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 Jff /1 PNP TO-5 Jff Uf V eto sus VOLTS Ic ^FE IC/ VCE DEVICE TYPE (max) (min/max AMPS @ A/V) 2N3867A 40 3 >25@2.5/3 2N3868A 60 3 2N5091 300 2N5093 V CE(sat) @ I c/I b (V @ A/A)

F2T951

Abstract: taml ic 1240 FZT851 FZT853 FZT951 FZT953 LFZT951 LB1200
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS m ISSUE 2- OCTOBER 1995 FEATURES ‘ 5 Amps continuous current, * Very low saturation voltages * Excellent * PtOt. 3 watts ‘ F2T951 exhibts ‘CEl$at) up to 15 Amps peak current gain characteristics

Contextual Info: Transistors SMD Type PNP Silicon Planar High Current Transistors FZT951 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. +0.1 3.00-0.1 +0.15 1.65-0.15 Features

BTP955L3

Contextual Info: Spec. No. : C607L3 Issued Date : 2005.02.04 Revised Date : 2006.06.23 Page No. : 1/5 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955L3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage

Contextual Info: Spec. No. : C607J3-A Issued Date : 2006.06.07 Revised Date : Page No. : 1/5 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955J3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage

smd transistor 2A

Abstract: FZT951 ic 1240
Contextual Info: Transistors SMD Type PNP Silicon Planar High Current Transistors FZT951 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. +0.1 3.00-0.1 +0.15 1.65-0.15 Features

CYStech Electronics

Abstract: sot-223 code marking BTP953L3
Contextual Info: Spec. No. : C657L3 Issued Date : 2005.01.07 Revised Date : 2005.03.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP953L3 Features • 5 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage

2N5581A

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I IH hpE @ IC/ Vce min/max @ mA/V VcEO sus VOLTS Ic (max) AMPS 2N2604 45 0.03 60@0.5/5 2N2605 45 0.03 150@0.5/5 2N2944AA 10 0.1 2N2945 20 2N2945AA DEVICE TYPE VcE<sat) @ Ic^B

Contextual Info: Transistors SMD Type PNP Silicon Planar High Current Transistors FZT953 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2

2N4033

Abstract: 2N3494 2N5415
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637

40411 transistor

Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
Contextual Info: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66

FCX1051A

Abstract: FCX1151A DSA003684
Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance;

Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance;

GL359

Contextual Info: CORPORATION GL359 Description ISSUED DATE :2005/10/27 REVISED DATE :2005/12/09B PNP SILICON PLANAR HIGH CURRENT TRANSISTOR The GL359 is designed for general purpose switching and amplifier applications. Features 5 Amps continuous current, up to 10Amps peak current

GL159

Contextual Info: CORPORATION GL159 Description ISSUED DATE :2005/07/19 REVISED DATE :2005/12/09C PNP SILICON PLANAR HIGH CURRENT TRANSISTOR The GL159 is designed for general purpose switching and amplifier applications. Features 5 Amps continuous current, up to 15Amps peak current

2N5005

Abstract: TO-210AA Package TO-59 Package to-210AA 2N5005 JANTX 2N5003
Contextual Info: 2N5003 and 2N5005 PNP POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/535 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed transistor is rated at 5 amps and is military qualified up to a JANTXV level.

MARKING SMD PNP TRANSISTOR 2a

Abstract: smd transistor 2A FCX1151A MARKING 25 SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1151A Features 2W power dissipation. 5A peak pulse current. Excellent HFE characteristics up to 5 Amps. Extremely low saturation voltage E.g. 60mv Typ. Extremely low equivalent on-resistance. RCE sat 66mÙ at 3A.

2N5003

Contextual Info: 2N5003 and 2N5005 PNP POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/535 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed transistor is rated at 5 amps and is military qualified up to a JANTXV level.