TO-252 P CHANNEL VGS 12V Search Results

Contextual Info: KSMD5P20 / KSMU5P20 200V P-Channel MOSFET TO-252 TO-251 Features • • • • • -3.7A, -200V, RDS on = 1.4Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested General Description These P-Channel enhancement mode power field effect

Contextual Info: KSMD1P50 / KSMU1P50 500V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -1.2A, -500V, RDS on = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: KSMD2P40 / KSMU2P40 400V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -1.56A, -400V, RDS on = 6.5Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: KSMD4P25 / KSMU4P25 250V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -3.1A, -250V, RDS on = 2.1Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 10.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: KSMD12P10 / KSMU12P10 100V P-Channel MOSFET TO-252 TO-251 Features • • • • • • • -9.4A, -100V, RDS on = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: KSMD11P06 / KSMU11P06 60V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -9.4A, -60V, RDS on = 0.185Ω @VGS = -10 V Low gate charge ( typical 13 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: KSMD5P10 / KSMU5P10 100V P-Channel MOSFET TO-252 Features • • • • • • • TO-251 -3.6A, -100V, RDS on = 1.05Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: KSMD3P50 / KSMU3P50 500V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -2.1A, -500V, RDS on = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: KSMD2P25 / KSMU2P25 250V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -2.0A, -250V, RDS on = 4.0Ω @VGS = -10 V Low gate charge ( typical 6.5 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: KSMD17P06 / KSMU17P06 60V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -12A, -60V, RDS on = 0.135Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: KSMD4P40 / KSMU4P40 400V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -2.7A, -400V, RDS on = 3.1Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: KSMD8P10TM_F085 100V P-Channel MOSFET TO-252 Features • • • • • • • • -6.6A, -100V, RDS on = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability Qualified to AEC Q101

Contextual Info: KSMD7P06 / KSMU7P06 60V P-Channel MOSFET Features • • • • • • TO-252 -5.4A, -60V, RDS on = 0.45Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-251 General Description

Contextual Info: KSMD6P25 / KSMU6P25 250V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -4.7A, -250V, RDS on = 1.1Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

pj 72 diode

Abstract: pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 vp1550 pj 85 lv
Contextual Info: Chapter S: Product Selector Guides Chapter Product Selector Guides 1. Hotswap Controller ICs/lnrush Current Limiters/Circuit Breaker IC s. 248 2. LED Driver IC s .

Contextual Info: FLL400IP-3 _ FEATURES • • • • • L-Band Medium & High Power GaAs FET Push-Pull Configuration High Power Output: 35W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V

1E14

Abstract: 2E12 FRK254D FRK254H FRK254R
Contextual Info: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

SI3456DV

Abstract: SI4420DY SI4874DY SUD50N03 lmt zener
Contextual Info: Application Report SLVA135 - MAY 2003 A Step-By-Step Design Approach to TPS2300/01/11/20/21/30/31 Hotswap Controllers Heping Dai PMP Systems Power ABSTRACT The TPS2300/01/10/11/20/21/30/31 hotswap controllers allow safe board insertion and removal from a live backplane. With the current-sensing resistor RSENSE and the

Contextual Info: tyvvys / FRK254D, FRK254R, FRK254H S e m ico n d ucto r y 7 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

SEM 238

Abstract: 1E14 2E12 FRK254D FRK254H FRK254R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

CD 294

Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,