TO-220AB RR Search Results

p2n60

Abstract: f2n60 pjp2n60 n60p mosfet 600v 10a to-220ab diode marking GA PJF2N60 2A600VRDS
Contextual Info: PJP2N60 / PJF2N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS ON =4.6Ω@VGS=10V, ID=1A TO-220AB ITO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current

F5N60

Abstract: p5n60 PJF5N60 PJP5N60 5N60 M2020 n60p
Contextual Info: PJP5N60 / PJF5N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 5A , 600V, RDS ON =2.1Ω@VGS=10V, ID=2.5A • • • • • • TO-220AB ITO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

DIODE P840

Abstract: F840
Contextual Info: PJP840 / PJF840 TO-220AB / ITO-220AB 500V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 500V, RDS ON =0.9Ω@VGS=10V, ID=4A • • • • • • TO-220AB ITO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

F8N60

Abstract: p8n60 *p8n60 8n60 MOSFET 40A 600V PJF8N60
Contextual Info: PJP8N60 / PJF8N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 600V, RDS ON =1.2Ω@VGS=10V, ID=4.0A • • • • • • TO-220AB ITO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

P4N60

Abstract: F4N60
Contextual Info: PJP4N60 / PJF4N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 4A , 600V, RDS ON =2.4Ω@VGS=10V, ID=2.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

F7N65

Abstract: P7N65 7N65 m2828
Contextual Info: PJP7N65 / PJF7N65 TO-220AB / ITO-220AB 650V N-Channel Enhancement Mode MOSFET FEATURES • 7A , 650V, RDS ON =1.4Ω@VGS=10V, ID=3.5A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

F12N65

Abstract: P12N65 PJP12N65
Contextual Info: PJP12N65 / PJF12N65 TO-220AB / ITO-220AB 650V N-Channel Enhancement Mode MOSFET FEATURES • 12A , 650V, RDS ON =0.8Ω@VGS=10V, ID=6.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

P830

Abstract: f830
Contextual Info: PJP830 / PJF830 TO-220AB / ITO-220AB 500V N-Channel Enhancement Mode MOSFET FEATURES • 4.5A , 500V, RDS ON =1.5Ω@VGS=10V, ID=2.5A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

P10N60

Abstract: F10N60 10A600VRDS PJF10N60 PJP10N60
Contextual Info: PJP10N60 / PJF10N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, RDS ON =1.0Ω@VGS=10V, ID=5.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

p13n50

Abstract: F13N50 3N50 PJF13N50
Contextual Info: PJP13N50 / PJF13N50 TO-220AB / ITO-220AB 500V N-Channel Enhancement Mode MOSFET FEATURES • 13A , 500V, RDS ON =0.52Ω@VGS=10V, ID=6.5A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

F730

Abstract: P730
Contextual Info: PJP730 / PJF730 TO-220AB / ITO-220AB 400V N-Channel Enhancement Mode MOSFET FEATURES • 5.5A , 400V, RDS ON =0.95Ω@VGS=10V, ID=3.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

F10N65

Abstract: P10N65
Contextual Info: PJP10N65 / PJF10N65 TO-220AB / ITO-220AB 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS ON =1.0Ω@VGS=10V, ID=5.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

p7n60

Abstract: F7N60 m2828 n60p ga 132
Contextual Info: PJP7N60 / PJF7N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 7A , 600V, RDS ON =1.2Ω@VGS=10V, ID=3.5A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

Contextual Info: HRW1002AC Silicon Schottky Barrier Diode for Rectifying Features Pin Arrangement • Low forward voltage drop and suitable for high efFifiency rectifying. • Same power as TO-220AB. • Small outline compared with TO-220AB. Ordering Information Type No.

E78996 scr

Abstract: 16TTS 16TTS08FP 16TTS12FP 16T MARKING
Contextual Info: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for

E78996 scr

Contextual Info: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for

Contextual Info: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for

Contextual Info: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for

Contextual Info: HRW1002AS Silicon Schottky Barrier Diode for Rectifying Features Pin Arrangement • Low forward voltage drop and suitable for high emnency rectifying. • Same power as TO-220AB. • Small outline compared with TO-220AB. • LDPAKCDpacJcage is suitable for high density

1606G

Abstract: 1602G 1603G 1604G 1607G FR1601G FR1607G
Contextual Info: FR1601G - FR1607G 16.0 AMPS. Glass Passivated Fast Recovery Rectifiers TO-220AB Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: TO-220AB molded plastic

PJP1N80

Contextual Info: PJP1N80 / PJU1N80 TO-220AB/TO-251 800V N-Channel Enhancement Mode MOSFET FEATURES TO-220AB • 1A, 800V, RDS ON =16Ω@VGS=10V, ID=0.5A • • • • • TO-251 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

Contextual Info: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for

E78996 scr

Contextual Info: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for

P1N80

Abstract: U1N80 ELER
Contextual Info: PJP1N80 / PJU1N80 TO-220AB/TO-251 800V N-Channel Enhancement Mode MOSFET FEATURES TO-220AB • 1A, 800V, RDS ON =16Ω@VGS=10V, ID=0.5A • • • • • • TO-251 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current