F10N65 Search Results
F10N65 Datasheets (8)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
F10N65
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Shandong Jingdao Microelectronics Co Ltd | N-channel power MOSFET in ITO-220ABW package, 650V drain-source voltage, 10A continuous drain current, RDS(ON) ≤ 1.0 ohm at VGS = 10V, designed for high-speed switching applications. | Original | ||||
SLP_F10N65SV
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Maplesemi | 650V N-Channel MOSFET with 10A continuous drain current, 0.81 ohm typical RDS(on) at VGS = 10V, low gate charge of 28nC, fast switching, and 100% avalanche tested for high ruggedness. | Original | ||||
SLP_F10N65A
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Maplesemi | 650V N-Channel MOSFET with 10A continuous drain current, 0.745 ohm typical RDS(on) at VGS = 10V, low gate charge of 19nC, and fast switching capability, suitable for high-efficiency power conversion applications. | Original | ||||
SLF10N65S
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Maplesemi | 650V N-Channel MOSFET with 10A continuous drain current, 0.8 ohm typical RDS(on) at VGS = 10V, low gate charge of 28.5nC, and high avalanche ruggedness, suitable for high-efficiency power conversion applications. | Original | ||||
JMPF10N65BJ
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Jiangsu JieJie Microelectronics Co Ltd | 650V, 10A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.95 ohm at VGS = 10V, designed for fast switching, load switch, PWM, and power management applications. | Original | ||||
SLP_F10N65C
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Maplesemi | 650V N-Channel MOSFET with 10A continuous drain current, 0.85Ω maximum RDS(on) at VGS = 10V, low gate charge of 48nC typical, suitable for high-efficiency power conversion applications. | Original | ||||
SLP_F10N65AV
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Maplesemi | 650V N-Channel MOSFET with 10A continuous drain current, 0.77 ohm typical RDS(on) at VGS = 10V, low gate charge of 38.3nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. | Original | ||||
SLF10N65C
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Maplesemi | 650V N-Channel MOSFET with 10A continuous drain current, 0.678 ohm typical RDS(on) at VGS=10V, low gate charge of 38nC, and fast switching for high-efficiency power applications. | Original |
F10N65 Price and Stock
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STMicroelectronics STF10N65K3Power MOSFET, N Channel, 650 V, 10 A, 1 ohm, TO-220FP, Through Hole - Bulk (Alt: 94T3371) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STF10N65K3 | Bulk | 1 |
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| STF10N65K3 | Tube | 26 Weeks | 1,000 |
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STF10N65K3 |
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STF10N65K3 | Bulk | 36 | 1 |
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STF10N65K3 | 118 | 1 |
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STF10N65K3 | 450 |
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STF10N65K3 | 2,000 | 27 Weeks | 50 |
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STF10N65K3 | 27 Weeks | 50 |
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STF10N65K3 | 4,826 |
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Alpha & Omega Semiconductor AOTF10N65Transistor: N-MOSFET; unipolar; 650V; 6.2A; TO220F |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AOTF10N65 | 410 | 1 |
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Cyg Wayon Circuit Protection Co Ltd WMF10N65C4Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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WMF10N65C4 | 1 |
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Cyg Wayon Circuit Protection Co Ltd WMF10N65C2Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; SOT223 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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WMF10N65C2 | 1 |
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WMF10N65C2 | 2,500 |
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alpha & omega AOTF10N65Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AOTF10N65 | 1,000 |
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