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    F10N65 Search Results

    F10N65 Datasheets (8)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge F10N65
    		Shandong Jingdao Microelectronics Co Ltd N-channel power MOSFET in ITO-220ABW package, 650V drain-source voltage, 10A continuous drain current, RDS(ON) ≤ 1.0 ohm at VGS = 10V, designed for high-speed switching applications. Original PDF
    badge SLP_F10N65SV
    		Maplesemi 650V N-Channel MOSFET with 10A continuous drain current, 0.81 ohm typical RDS(on) at VGS = 10V, low gate charge of 28nC, fast switching, and 100% avalanche tested for high ruggedness. Original PDF
    badge SLF10N65S
    		Maplesemi 650V N-Channel MOSFET with 10A continuous drain current, 0.8 ohm typical RDS(on) at VGS = 10V, low gate charge of 28.5nC, and high avalanche ruggedness, suitable for high-efficiency power conversion applications. Original PDF
    badge SLP_F10N65AV
    		Maplesemi 650V N-Channel MOSFET with 10A continuous drain current, 0.77 ohm typical RDS(on) at VGS = 10V, low gate charge of 38.3nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. Original PDF
    badge SLF10N65C
    		Maplesemi 650V N-Channel MOSFET with 10A continuous drain current, 0.678 ohm typical RDS(on) at VGS=10V, low gate charge of 38nC, and fast switching for high-efficiency power applications. Original PDF
    badge SLP_F10N65C
    		Maplesemi 650V N-Channel MOSFET with 10A continuous drain current, 0.85Ω maximum RDS(on) at VGS = 10V, low gate charge of 48nC typical, suitable for high-efficiency power conversion applications. Original PDF
    badge JMPF10N65BJ
    		Jiangsu JieJie Microelectronics Co Ltd 650V, 10A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.95 ohm at VGS = 10V, designed for fast switching, load switch, PWM, and power management applications. Original PDF
    badge SLP_F10N65A
    		Maplesemi 650V N-Channel MOSFET with 10A continuous drain current, 0.745 ohm typical RDS(on) at VGS = 10V, low gate charge of 19nC, and fast switching capability, suitable for high-efficiency power conversion applications. Original PDF
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    F10N65 Price and Stock

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    STMicroelectronics STF10N65K3

    MOSFET N-CH 650V 10A TO220FP
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    DigiKey STF10N65K3 Tube 974 1
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    Avnet Americas () STF10N65K3 Bulk 1
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    STF10N65K3 Tube 13 Weeks 1,000
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    Mouser Electronics STF10N65K3
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    Newark STF10N65K3 Bulk 5 1
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    TME STF10N65K3 88 1
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    ComSIT USA STF10N65K3 450
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    Avnet Silica STF10N65K3 2,000 14 Weeks 50
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    EBV Elektronik STF10N65K3 15 Weeks 50
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    Alpha & Omega Semiconductor AOTF10N65

    MOSFET N-CH 650V 10A TO220-3F
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    DigiKey AOTF10N65 Tube 1,000
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    TME AOTF10N65 450 1
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    Alpha & Omega Semiconductor AOWF10N65

    MOSFET N-CH 650V 10A TO262F
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    DigiKey AOWF10N65 Tube 1,000
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    Chip Stock AOWF10N65 195
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    Micro Commercial Components MIF10N65AT0Y-BP

    IGBT TRENCH FS 650V 15A ITO220AB
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    DigiKey MIF10N65AT0Y-BP Bulk 5,000
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    Cyg Wayon Circuit Protection Co Ltd WMF10N65C2

    Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; SOT223
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    TME WMF10N65C2 1
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    F10N65 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    F10N65

    Abstract: P10N65
    Contextual Info: PJP10N65 / F10N65 TO-220AB / ITO-220AB 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS ON =1.0Ω@VGS=10V, ID=5.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


    Original     		PJP10N65 PJF10N65 O-220AB ITO-220AB O-220AB 2002/95/EC ITO-220AB MIL-STD-750 F10N65 P10N65 PDF