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    P12N65 Search Results

    P12N65 Datasheets (1)

    Maplesemi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge SLF_P12N65C
    Maplesemi 650V N-Channel MOSFET with 12A continuous drain current, 0.75 ohm typical RDS(on) at VGS = 10V, low gate charge of 52nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. Original PDF
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    P12N65 Price and Stock

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    IXYS Corporation IXFP12N65X2M

    MOSFET N-CH 650V 12A TO220
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    DigiKey IXFP12N65X2M Tube 272 1
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    STMicroelectronics STP12N65M5

    MOSFET N-CH 650V 8.5A TO220AB
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    IXYS Corporation IXTP12N65X2

    MOSFET N-CH 650V 12A TO220
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    IXYS Corporation IXFP12N65X2

    MOSFET N-CH 650V 12A TO220AB
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    Mouser Electronics IXFP12N65X2 70
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    IXYS Corporation IXTP12N65X2M

    MOSFET N-CH 650V 12A TO220
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    P12N65 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    F12N65

    Abstract: P12N65 PJP12N65
    Contextual Info: P12N65 / PJF12N65 TO-220AB / ITO-220AB 650V N-Channel Enhancement Mode MOSFET FEATURES • 12A , 650V, RDS ON =0.8Ω@VGS=10V, ID=6.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


    Original
    PJP12N65 PJF12N65 O-220AB ITO-220AB O-220AB 2002/95/EC ITO-220AB MIL-STD-750 F12N65 P12N65 PDF