8N60 Search Results

8N60

Abstract: 600v 75a mosfet transistor 8n60 8N60 equivalent MOSFET transistor 75A 600V MOSFET
Contextual Info: isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor 8N60 •FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V Min ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified

8N60GX

Abstract: 8n60a 8N60L 8N60 8n60b 8n60g 8N60-B UTC8N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

115 e

Abstract: UTC8N60 8N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

8N60L-A TO-220

Abstract: 8N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

SVDF8N60F

Abstract: 8N60
Contextual Info: 8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 8 AMPERES Description: The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N60K-MT Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

8N60M

Abstract: 8N60 TM8N60 8N55 H8N60
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TH 8N 55 M T H 8N 60 M TM 8N60 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancem ent-M ode Silicon G ate TM O S These TM O S Power FETs are designed fo r h ig h voltag e , high speed p o w e r sw itch in g a pp licatio n s such as sw itch in g regulators,

MTH8N55

Abstract: DIODE MOTOROLA B33 MTM8N60 3fc relay 000073S AN569 MTH8N60 U055 TO 521 MH
Contextual Info: MOTOROLA SC IME D I XSTRS/R F b3 b?a SM O Oâ ^a bT 3 I S f -1 5 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M T H 8N 55 MTH8ÏM60 M TM 8N60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T h e s e T M O S P o w e r FETs are d e s ig n e d fo r h ig h v o lta g e , high

8N60

Abstract: UTC8N60 8n60a 8N60-B 8n60b
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N60-E Preliminary Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N60-E is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

8n60

Abstract: 8n60l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: MOTOROLA O rder this docum ent by M TW 8N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW 8N60E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 8.0 AMPERES 600 VOLTS

8N60

Abstract: 8N60GX 8n60l 8N60G 8N60L-A TO-220 8N60 equivalent 8N60-B mosfet 4b 8n60b TO-220F
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

6N60E

Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
Contextual Info: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218

FR107 SMD

Abstract: ntc 5d-9 pc817 smd 8N60 1N4148 SMD smd transistor B20100 transistor 5d smd pc817c APPLICATION CIRCUITS 5d9 smd AP3101
Contextual Info: BCD Semi Ltd Co. AP3101 Demo Board Part Number: DB-AP3101-A Seriers Number: V1.3-038 Content: 1. Description 2. Specifications 3. Schematics of the PCB 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimensions 7. BOM 8. Test Result PROPRIETARY & CONFIDENTIAL

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

8N60C

Abstract: 8N60CT FQPF8N60CT FAN7602 FQPF8N60CYDTU FQPF8N60C AN-6014 FQPF Series
Contextual Info: 8N60C/8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

8n60

Contextual Info: E 8N60 VDSS=600V; ID=8.0A; RDS ON =1.0Ω MOSFET Die in Wafer Form 100% Tested at Probe Key Electrical Characteristics (TO­220 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Tj TSTG Description Drain­to­Source Breakdown Voltage

8N60

Abstract: RX8N60
Contextual Info: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD 8N60 600V N 沟道功率 MOSFET 产品简介 地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893

8N65

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices

8N60

Abstract: 8N60 equivalent e-bike MARKING A3 C409FP-A Device Marking A3
Contextual Info: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET 8N60FP Spec. No. : C409FP-A Issued Date : 2009.04.29 Revised Date : Page No. : 1/8 BVDSS : 650V @Tj=150℃ RDS ON : 1.2Ω ID : 7.5A Description The 8N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best

uc3842 48v charger

Abstract: power led uc3842 48V SMPS BATTERY CHARGER bt1 marking uc3842 constant current 1N54
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UM608 Preliminary LINEAR INTEGRATED CIRCUIT CONSTANT VOLTAGE AND CONSTANT CURRENT CONTROLLER FOR BATTERY CHARGERS „ DESCRIPTION The UTC UM608 is a highly integrated solution for a constant voltage/constant current mode SMPS application.