TO-205AF PACKAGE Search Results

Power MOSFET Selection Guide

Abstract: TO-205AF Package
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV0SS V rDS(ON) (fi) T0-205AF 100 0.600 id (A) 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-2Û5AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0,480 5 FSL130D, FSL130R TO-205AF

MOSFET Selection Guide

Abstract: TO257AA t0-205af TO254AA FSj264
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480

TO205AF

Contextual Info: TO-205AF 3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE INCHES ØD ØD1 SYMBOL P A SEATING PLANE h L Øb e e1 2 e2 1 90o 3 45o j k MIN MILLIMETERS MAX MIN MAX NOTES A 0.16 0.180 4.07 4.57 - Øb 0.01 0.021 0.41 0.53 2, 3 ØD 0.34 0.370 8.64 9.39 - ØD1 0.31

Contextual Info: Power Packages TO-205AF 3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE INCHES ØD ØD1 SYMBOL P A h SEATING PLANE L Øb e e1 2 e2 1 90o 3 45o j k MIN MILLIMETERS MAX MIN MAX NOTES A 0.160 0.180 4.07 4.57 - Øb 0.016 0.021 0.41 0.53 2, 3 ØD 0.350 0.370 8.89

TO-205AF Package

Contextual Info: Power Packages TO-205AF 3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE INCHES ØD ØD1 SYMBOL P A SEATING PLANE h L Øb e e1 2 e2 1 90o 3 45o j k 19 MIN MILLIMETERS MAX MIN MAX NOTES A 0.160 0.180 4.07 4.57 - Øb 0.016 0.021 0.41 0.53 2, 3 ØD 0.340 0.370

l9130h

Contextual Info: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550S1 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

PLN 2032

Abstract: TO-226A to-237
Contextual Info: TELEDYNE COMPONENTS aaE j> o aii?t.Qa ûüab44i a T-31-25 SD3300, SD3301 SE M IC O N D U C TO R N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION SD33Q0CHP SD3301CHP TO-205AF TO-39 Hermetic Package SD3300Ht> SD3301HB TO-226AA (TO-92) Plastic Package

Contextual Info: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 100V, RDS on = 0.180^ TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

TA17415

Abstract: IRFF430 TB334
Contextual Info: IRFF430 Data Sheet March 1999 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET • 2.75A, 500V Formerly developmental type TA17415. Ordering Information IRFF430 PACKAGE TO-205AF 1894.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRFF330

Abstract: TA17414 TB334
Contextual Info: IRFF330 Data Sheet March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V Formerly developmental type TA17414. Ordering Information IRFF330 PACKAGE TO-205AF 1893.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

FRL9130R

Abstract: 2E12 FRL9130D FRL9130H
Contextual Info: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

BLUECORE4 rom

Abstract: SD204 SD204CHP SD204HD SD205 SD205CHP SD205HD
Contextual Info: TOPAZ SEMICO NDU CT OR DSE D | TOÖSSEt, 0Q01GD3 L | ITü^lJ^ÆÉ^ $0204,_ SBim SEMICONDUCTOR N-CHANNEL ENHÂNCI^iNM'JODE D-MOS POWER FETs ORDERING INFORMATION SD204CHP SD204HD 6.0 ohm, 25V Sorted Chips in Waffle Pack TO-205AF TO-39 Package Description

Contextual Info: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50S1 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

FRL9130R

Abstract: 2E12 FRL9130D FRL9130H Rad Hard in Fairchild for MOSFET
Contextual Info: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET
Contextual Info: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: FRL230D FRL230H FRL230R 1E14
Contextual Info: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

N-channel enhancement 200V 60A

Abstract: TC 9310 IC DATA SHEET 1E14 2E12 FRL234D FRL234H FRL234R
Contextual Info: FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 4A, 250V, RDS on = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

pj 939 diode

Abstract: TO-205A AN-8831 VDMOS reliability testing report Rad hard for Harris
Contextual Info: Semiconductor FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550£2 TO-205AF • Second Generation Rad Hard M OSFET Results From New Design Concepts • G am m a - M eets Pre-Rad Specifications to 100KRAD(Si)

SD3301

Abstract: SD3301HD SD3304 SD33 SD3300AD SD3300BD SD3300CHP SD3300HD SD3301AD SD3301CHP
Contextual Info: TOP AZ SEMICONDUCTOR OSE D g ‘iOÖSESb OQOlObM 4 | T-31-25 S D 3 S G 0 , § 0 3 3 0 1 SEMICONDUCTOR N-CHANNEL ENHÂMCIMENT-MODE D-MOS POWER FETs ORDERING INFORMATION SD3301CHP SD33Û0CHP Sorted Chips in Waffle Pack TO-205AF TO-39 Hermetic Package ' SD3300HD

Contextual Info: 2N6849U Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849U switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a thru hole TO-205AF package. Microsemi also

DD 127 D TRANSISTOR

Abstract: transistor DD 127 D 2N6849 2N6849 JANTX u18 transistor
Contextual Info: 2N6849U Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849U switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a thru hole TO-205AF package. Microsemi also

Contextual Info: y*Rg*s FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30£i TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

JANTX2N6845

Abstract: diode 50v 40A ir IRFF9120 JANTXV2N6845
Contextual Info: PD - 90552C IRFF9120 JANTX2N6845 JANTXV2N6845 REF:MIL-PRF-19500/563 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF9120 BVDSS -100V RDS(on) 0.60Ω ID -4.0A  The HEXFET technology is the key to International