PLN 2032
Abstract: TO-226A to-237
Contextual Info: TELEDYNE COMPONENTS aaE j> o aii?t.Qa ûüab44i a T-31-25 SD3300, SD3301 SE M IC O N D U C TO R N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION SD33Q0CHP SD3301CHP TO-205AF TO-39 Hermetic Package SD3300Ht> SD3301HB TO-226AA (TO-92) Plastic Package
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ab44io-205afo-226aao-237+8sd33q0chpsd3300htsd3300bdsd33qsd3301chpsd3301hbpln 2032to-226a to-237
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SD3301
Abstract: SD3301HD SD3304 SD33 SD3300AD SD3300BD SD3300CHP SD3300HD SD3301AD SD3301CHP
Contextual Info: TOP AZ SEMICONDUCTOR OSE D g ‘iOÖSESb OQOlObM 4 | T-31-25 S D 3 S G 0 , § 0 3 3 0 1 SEMICONDUCTOR N-CHANNEL ENHÂMCIMENT-MODE D-MOS POWER FETs ORDERING INFORMATION SD3301CHP SD33Û0CHP Sorted Chips in Waffle Pack TO-205AF TO-39 Hermetic Package ' SD3300HD
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t-31-25d-iv30ssd3300chpsd3301chp+11o-205afsd3300hdsd3301hdo-226aasd3300bdo-237sd3301sd3304sd33sd3300adsd3301ad
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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t0-92options4206azvn4206czvn4206e+15zvn4306atn2106k1vn2210n3tn0606n3tn0606n6mosfet cross referencepj 929 diodepj 1229 diodebss250vn0109n5pj 66 diodepj 929bss295 "direct replacementbss295 "cross referencepj 69 diode
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