TK30A Search Results

transistor K30A

Abstract: K30A06J TK30A06J3 K30A06J3 k30a06 k30a TC5080
Contextual Info: TK30A06J3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSⅢ TK30A06J3 Motor Drive Application Unit: mm Load Swithch Application Chopper Regulator and DC−DC Converter Application  Low drain-source ON resistance: RDS (ON) = 19 mohm (typ.)

Contextual Info: TK30A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

Contextual Info: TK30A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

Contextual Info: TK30A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

Contextual Info: TK30A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

Contextual Info: TK30A06N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK30A06N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 12.2 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 60 V)

K30A06J3

Abstract: TK30A06J3A toshiba K30a06j3 k30a06 transistor K30A K30A06J TK30A06J3 K30A06J3A tk30a tk30a06
Contextual Info: TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSⅢ TK30A06J3A Switching Regulator Applications z Unit: mm Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) z High forward transfer admittance: |Yfs| = 34 S (typ.) z Low leakage current: IDSS = 10 A (max) (VDS = 60 V)

TK30A06N1

Contextual Info: TK30A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

K30A06J3

Abstract: k30a06 K30A06J TK30A06J3A k30a K30A06J3A TK30A06J3
Contextual Info: TK30A06J3A 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅢ TK30A06J3A ○ スイッチングレギュレータ用 単位: mm • : RDS (ON) = 19 m Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs|= 34 S (標準)

K30A06J3

Abstract: k30a06 TK30A06J3A K30A06J toshiba K30a06j3
Contextual Info: TK30A06J3A 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅢ TK30A06J3A ○ スイッチングレギュレータ用 単位: mm • : RDS (ON) = 19 m Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs|= 34 S (標準)

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

fast tlp785

Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
Contextual Info: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W

Contextual Info: www.greenlee.com ESSENTIAL ELECTRICAL Kits TK-30A • TK-30AGFI MULTIMETER Measure AC/DC voltage up to 600V NON-CONTACT VOLTAGE DETECTOR Safely detect AC Voltage RECEPTACLE TESTER Ensure sockets are wired correctly and test Ground Fault Circuit Interrupter GFCI

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IN60C

Abstract: In13SBK TB-2503 IN60BK tk100a terminal block in411s IN30BK-C IN411S IN100K-C TB-1512
Contextual Info: Terminal Blocks IN series terminal blocks • Type "IN" can be fit on and removed from 35mm wide Din rails quickly and easily. Current Capacity:20A-400A. ■ Insulation Voltage:600V. ■ Space slice no need. ■ Insulation IN12BK-C IN30BK-C IN13SBK-C IN60BK-C

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

toshiba laptop charging CIRCUIT diagram

Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
Contextual Info: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5

tpc8118 equivalent replacement

Abstract: SSM3J307T Zener diode smd 071 A01
Contextual Info: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

TK12A10K3

Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Contextual Info: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

gt50jr22

Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
Contextual Info: System Catalog May 2014 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g –2 Types and Applications of Switching Power Supplies Types of DC-DC converters embedded in various