TK13A50D Search Results

TK13A50D Datasheets (4)

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Toshiba

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TK13A50DA	Toshiba	Transistors - Mosfets	Original	PDF	176.38KB	6
TK13A50DA	Toshiba	Japanese - Transistors - Mosfets	Original	PDF	269.56KB	6
TK13A50DA(STA4,Q,M	Toshiba	TK13A50DA - Trans MOSFET N-CH 500V 12.5A 3-Pin(3+Tab) TO-220SIS	Original	PDF	176.38KB	6
TK13A50D(STA4,Q,M)	Toshiba	TK13A50D - Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220SIS	Original	PDF	183.88KB	6

TK13A50D Price and Stock

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Toshiba America Electronic Components


Toshiba America Electronic Components TK13A50D(STA4,X,M) Trans MOSFET N-CH Si 500V 13A 3-Pin(3+Tab) TO-220NIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	TK13A50D(STA4,X,M)		50		3	1 - 10 $1.28 100 $1.28 1000 $1.28 10000 $1.28	Buy Now
Toshiba America Electronic Components TK13A50D,S5Q(J TK13A50D,S5Q(J
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	TK13A50D,S5Q(J		45		3	1 - 10 $1.42 100 $1.42 1000 $1.42 10000 $1.42	Buy Now
Toshiba America Electronic Components TK13A50D(STA4,Q,M) Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK13A50D(STA4,Q,M))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK13A50D(STA4,Q,M)	Tube		16 Weeks	50	1 - 10 - 100 $1.79 1000 $1.44 10000 $1.44	Buy Now
EBV Elektronik	TK13A50D(STA4,Q,M)			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TK13A50DA(STA4,Q,M - Rail/Tube (Alt: TK13A50DA(STA4,Q,M)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK13A50DA(STA4,Q,M	Tube		16 Weeks	50	1 - 10 - 100 $1.63 1000 $1.30 10000 $1.30	Buy Now
EBV Elektronik	TK13A50DA(STA4,Q,M			25 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TK13A50DQ SILICON N CHANNEL MOS TYPE (PI-MOS VII) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 12.5A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	TK13A50DQ		250			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TK13A50D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TK13A50DA 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅦ TK13A50DA ○ スイッチングレギュレータ用単位: mm z : RDS (ON) = 0.39 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)	Original	tk13a50da	PDF
k13a50da Abstract: TK13A50DA k13a50 K13A K13A50D Contextual Info: TK13A50DA 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅦ TK13A50DA ○ スイッチングレギュレータ用単位: mm z : RDS (ON) = 0.39 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)	Original	tk13a50da sc-67 2-10u1b 20070701-ja +4k13a50da k13a50 k13a k13a50d	PDF
k13a50da Abstract: k13a50 TK13A50DA K13A50D Contextual Info: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	tk13a50da k13a50da k13a50 k13a50d	PDF
K13A50D transistor Abstract: K13A50D TK13A50D transistor K13a50d k13a50 K*A50D toshiba K13A50D Contextual Info: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	tk13a50d k13a50d transistor k13a50d transistor k13a50d +3k13a50 k*a50d toshiba k13a50d	PDF
K13A50D transistor Abstract: k13a50 K13A50D TK13A50D K*A50D Contextual Info: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	tk13a50d k13a50d transistor k13a50 k13a50d +1k*a50d	PDF
k13a50 Abstract: K13A50DA K13A50D K13A TK13A50DA Contextual Info: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	tk13a50da k13a50 k13a50da k13a50d +1k13a	PDF
k13a50da Abstract: K13A50D Contextual Info: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	tk13a50da k13a50da k13a50d	PDF
Contextual Info: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	tk13a50da	PDF
K13A50D Abstract: TK13A50D VDD200 k13a50 K*A50D Contextual Info: TK13A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK13A50D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 500 V)	Original	tk13a50d k13a50d vdd200 k13a50 +1k*a50d	PDF
k13a50da Contextual Info: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	tk13a50da k13a50da	PDF
Contextual Info: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	tk13a50d	PDF
K13A50D 2.0 transistor Abstract: K13A50D transistor K13A50D Contextual Info: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	tk13a50d k13a50d 2.0 transistor k13a50d transistor k13a50d	PDF
K13A50D Abstract: tk13a50d k13a50 k13a Contextual Info: TK13A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK13A50D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 500 V)	Original	tk13a50d k13a50d k13a50 k13a	PDF
circuit diagram of luminous inverter Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG Contextual Info: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances	Original	bce0013c circuit diagram of luminous inverter tc7600fng sine wave pwm dc to ac inverter ics +73 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine uln2003apg 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram tb6584fng	PDF

fast tlp785 Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH Contextual Info: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W	Original	sce0024f fast tlp785 tk10a60d 5252 f solar +2tcv7116 tph1400anh	PDF
2SK3567 equivalent Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	bce0017f e-28831 bce0017g 2sk3567 equivalent +92sk3569 equivalent tpca*8023 tk8a50d equivalent 2sk2056 2sk3878 equivalent tpca8023 2sk941 equivalent 2sk3561 equivalent 2sk1603	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	sce0004l ttc4116 2sc4118 tta1586 +162sa1588 2sc4117 2sa1587 2sc5233 2sc4738 2sa1832 gt30f131 gt30f124 tk18a60v smd m5 transistor 6-pin smd transistor h2a npn gt50n322 marking smd pnp transistor h2a gt30j124 30f124 tpcp8r01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	scj0004r sc-43 2sc1815 2sc732tm +142sc1959 2sa1015 2sc2240 2sa970 igbt gt30f124 igbt gt30j124 gt30f124 gt30j124 gt50n322 tk25e06k3 tpcp8r01 tk12a10k3 gt30g124 2sk3075	PDF
2SK4207 Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 Contextual Info: 製品カタログ 2009-9 東芝半導体製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3	Original	bcj0082b bcj0082a 2sk4207 to220sis +8tpca*8023 tk80a08k3 tpc8119 tk40a08k3 2sk4112 ssm3j16fs 2sk3568 tpc8a03	PDF
transistor compatible 2SK3569 Abstract: TK12A65D 2SK3569 equivalent tk6a65d equivalent TB-7005 TPCA8019-H TPCA8023-H tk10a60d equivalent TPCA8030-H p 181 Photocoupler Contextual Info: 2009-3 SYSTEM CATALOG Semiconductors for Power Supplies SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng AC-Input Switching Power Supply Circuits and Recommended New Product Series ● Secondary rectifier 1. Ultra-high-speed N-channel trench MOSFET U-MOSIII-H Series	Original	tlp285/tlp781 tb6818fg/tb6819fg sce0024b sce0024c +10transistor compatible 2sk3569 tk12a65d 2sk3569 equivalent tk6a65d equivalent tb-7005 tpca8019-h tpca8023-h tk10a60d equivalent tpca8030-h p 181 photocoupler	PDF
TPCA8064 Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA8077 TPCA8028 Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original	bce0082b tpca8064 tk12a10k3 tpca8077 +72sk3567 equivalent ssm3j328 tpca8077-h tj11a10m3 tk50e06k3a tpca8077 tpca8028	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9sce0004k sc-43 2sc1815 700the +10gt30f124 tpcp8r01 gt30j124 japanese 2sc transistor 2010 smd transistor h2a smd marking 8l01 tk25e06k3 gt45f122 gt30g124 gt30f123	PDF
toshiba laptop charging CIRCUIT diagram Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120 Contextual Info: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5	Original	bce0082h toshiba laptop charging circuit diagram tpc8123 tph1400anh +6tpca8047-h tpc 8127 tpc8123 cross reference ssm3j328r ssm3j334r tpc8120	PDF
TK12A10K3 Abstract: tk12a10k TK33A60V TPCA8065 TK40E10K3 SSM6K407TU TPCA8064 tk6a65d equivalent TPCA*8036 TK100G10N1 Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4	Original	tk12a10k3 tk12a10k tk33a60v tpca8065 +6tk40e10k3 ssm6k407tu tpca8064 tk6a65d equivalent tpca*8036 tk100g10n1	PDF

TK13A50D Search Results

TK13A50D Datasheets (4)

TK13A50D Price and Stock

Toshiba America Electronic Components TK13A50D(STA4,X,M)

Toshiba America Electronic Components TK13A50D,S5Q(J

Toshiba America Electronic Components TK13A50D(STA4,Q,M)

Toshiba America Electronic Components TK13A50DA(STA4,Q,M

Toshiba America Electronic Components TK13A50DQ

TK13A50D Datasheets Context Search

k13a50da

k13a50da

K13A50D transistor

K13A50D transistor

k13a50

k13a50da

K13A50D

k13a50da

K13A50D 2.0 transistor

K13A50D

circuit diagram of luminous inverter

fast tlp785

2SK3567 equivalent

GT30F131

IGBT GT30F124

2SK4207

transistor compatible 2SK3569

TPCA*8064

GT30F124

toshiba laptop charging CIRCUIT diagram

TK12A10K3