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Toshiba America Electronic Components


Toshiba America Electronic Components TK13A50DA(STA4,Q,M MOSFET N-CH 500V 12.5A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK13A50DA(STA4,Q,M	Tube	11		1	1 $3.38 10 $3.38 100 $1.69 1000 $1.18 10000 $1.15	Buy Now
Avnet Americas	TK13A50DA(STA4,Q,M	Tube		16 Weeks	50	1 - 10 - 100 $1.66 1000 $1.14 10000 $1.14	Buy Now
Mouser Electronics	TK13A50DA(STA4,Q,M		140			1 $3.45 10 $2.25 100 $1.72 1000 $1.23 10000 $1.17	Buy Now

K13A50DA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: K13A50DA 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅦ K13A50DA ○ スイッチングレギュレータ用単位: mm z : RDS (ON) = 0.39 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)	Original	TK13A50DA	PDF
k13a50da Abstract: TK13A50DA k13a50 K13A K13A50D Contextual Info: K13A50DA 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅦ K13A50DA ○ スイッチングレギュレータ用単位: mm z : RDS (ON) = 0.39 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)	Original	TK13A50DA SC-67 2-10U1B 20070701-JA k13a50da TK13A50DA k13a50 K13A K13A50D	PDF
k13a50da Abstract: k13a50 TK13A50DA K13A50D Contextual Info: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK13A50DA k13a50da k13a50 TK13A50DA K13A50D	PDF
k13a50 Abstract: K13A50DA K13A50D K13A TK13A50DA Contextual Info: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK13A50DA k13a50 K13A50DA K13A50D K13A TK13A50DA	PDF
k13a50da Abstract: K13A50D Contextual Info: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK13A50DA k13a50da K13A50D	PDF
Contextual Info: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK13A50DA	PDF
k13a50da Contextual Info: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK13A50DA k13a50da	PDF