K13A50D Search Results

K13A50D Price and Stock

Filter by Manufacturer

Toshiba America Electronic Components


Toshiba America Electronic Components TK13A50D(STA4,Q,M) Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK13A50D(STA4,Q,M))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK13A50D(STA4,Q,M)	Tube		16 Weeks	50	1 - 10 - 100 $1.79 1000 $1.44 10000 $1.44	Buy Now
EBV Elektronik	TK13A50D(STA4,Q,M)			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TK13A50DA(STA4,Q,M - Rail/Tube (Alt: TK13A50DA(STA4,Q,M)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK13A50DA(STA4,Q,M	Tube		16 Weeks	50	1 - 10 - 100 $1.63 1000 $1.30 10000 $1.30	Buy Now
EBV Elektronik	TK13A50DA(STA4,Q,M			25 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TK13A50DQ SILICON N CHANNEL MOS TYPE (PI-MOS VII) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 12.5A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	TK13A50DQ		250			1 - 10 - 100 - 1000 - 10000 -	Get Quote

K13A50D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: K13A50DA 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅦ K13A50DA ○ スイッチングレギュレータ用単位: mm z : RDS (ON) = 0.39 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)	Original	tk13a50da	PDF
k13a50da Abstract: TK13A50DA k13a50 K13A K13A50D Contextual Info: K13A50DA 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅦ K13A50DA ○ スイッチングレギュレータ用単位: mm z : RDS (ON) = 0.39 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)	Original	tk13a50da sc-67 2-10u1b 20070701-ja +4k13a50da k13a50 k13a k13a50d	PDF
k13a50da Abstract: k13a50 TK13A50DA K13A50D Contextual Info: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	tk13a50da k13a50da k13a50 k13a50d	PDF
K13A50D transistor Abstract: K13A50D TK13A50D transistor K13a50d k13a50 K*A50D toshiba K13A50D Contextual Info: K13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	tk13a50d k13a50d transistor k13a50d transistor k13a50d +3k13a50 k*a50d toshiba k13a50d	PDF
K13A50D transistor Abstract: k13a50 K13A50D TK13A50D K*A50D Contextual Info: K13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	tk13a50d k13a50d transistor k13a50 k13a50d +1k*a50d	PDF
k13a50 Abstract: K13A50DA K13A50D K13A TK13A50DA Contextual Info: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	tk13a50da k13a50 k13a50da k13a50d +1k13a	PDF
k13a50da Abstract: K13A50D Contextual Info: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	tk13a50da k13a50da k13a50d	PDF
Contextual Info: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	tk13a50da	PDF
K13A50D Abstract: TK13A50D VDD200 k13a50 K*A50D Contextual Info: K13A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K13A50D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 500 V)	Original	tk13a50d k13a50d vdd200 k13a50 +1k*a50d	PDF
k13a50da Contextual Info: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	tk13a50da k13a50da	PDF
Contextual Info: K13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	tk13a50d	PDF
K13A50D 2.0 transistor Abstract: K13A50D transistor K13A50D Contextual Info: K13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	tk13a50d k13a50d 2.0 transistor k13a50d transistor k13a50d	PDF
K13A50D Abstract: tk13a50d k13a50 k13a Contextual Info: K13A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K13A50D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 500 V)	Original	tk13a50d k13a50d k13a50 k13a	PDF