TIP 50 TRANSISTOR Search Results

3055 5C pnp transistor

Abstract: tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055
Contextual Info: TYPES TIP110, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH TIP 1 1 5 , T IP 1 1 6 , TIP 117 • High SO/1 Capability, 40 V and 1.25 A • 50 W at 2 5 °C Case Temperature •

tip 420 transistor

Abstract: tip 222 transistor transistor tip 420 Equivalent of transistor tip 420 UP-420-B t01a UP-420 dissipator TIP-29C UP-000-CB
Contextual Info: SECTION 2 HEATDISSIPATORS FOR PLASTIC CASE, CASE-MOUNTED SEMICONDUCTORS UP2 Dual Mount Series $ UP2-T0127-2CB w/ 2 TIP-29C (TO-220) TRANSISTORS -! n o ir 100 90 j; / 70 50 / 20 10 t* / / / 40 'Sy / I 50 30 A. N.C. Horiz. Device Only M ounted to G-10. B. N.C. Horiz. & Vert.

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR MJD47/50 HIGH VOLTAGE AND HIGH RELIABILITY DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • Load Form ed for Surface M ount Application No Suffix • Straight Lead (I.PACK, 1” Suffix) • E lectrically S im ila r to Popular TIP 47 and TIP50

Contextual Info: KSH47/50 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Load Formed for Surface M ount Application No Suffix • Straight Lead (I.PACK, 1” Suffix) • E lectrically S im ila r to Popular TIP 47 and TIP50

MJD50

Abstract: MJD47 TIP50 TIP47 0J52
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR MJD47/50 HIGH VOLTAGE AND HIGH RELIABILITY DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • Load Form ed for Surface M ount Application No Suffix • Straight Lead (I.PACK, I” Suffix) • Electrically S im ila r to Popular TIP 47 and TIP50

TIP 152 transistor

Abstract: transistor tip 46
Contextual Info: ~ LA-A 1 Series LAE66AICB w/TIP-29C TO-220 TRANSISTOR -, GllOfI/AI"- DESCRIPTION OF CURVES ~100 1z 90 80 B. N.C. Horiz. & Vert. With Dissipator. 70 ". 200 FPM w/Diss. 60 D. 500 FPM w/Diss. E. 1000 FPM w/Diss. 50 w ~ 0= ~ ~ w 1W cn < () ~, A. N.C. Horiz. Device

TIP111

Contextual Info: TYPES TIP110, TIPTI1, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED FOR COMPLEMENTARY USE WITH TIP115,TIP116,TIP 117 •' CD CO c 5 r » High S O i Capability, 40 V and 1.25 A • 50 W at 25°C Case Temperature • Min hFE of 500 at 4 V, 2 A

Contextual Info: PA2 Series l/ A ' 90 j 80 70 60 1 / i 30 20 10 i/ / / / / z > 40 / / h 50 c A 7 / / / / - -T . , .••"T"“ . B 1 100 .'l'­ j PA2-1U W/TIP-29C TO-220 TRANSISTOR ilo / D E S C R IP T IO N O F CURVES A . N .C. H o rii.D e v ice O n ly M ounted to G-10.

B0738

Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073
Contextual Info: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m

BD633

Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
Contextual Info: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.

B0638

Abstract: BD638 TIP 122 100 V BD636 B0738 BD637 tip 42 darlington complementary power amplifier tip 142 BD634 73 5302
Contextual Info: BD634, BD636, BD638 PNP EPIBASE POWER TRANSISTORS IPRELIMINARY 873 Amplifier Switch Complementary Output Stages Complementary with BD633, BD635, BD637 mechanical data •— 6 , 0 - o ss l-i ! i J — 1.3 r r - - 16,5 , TT , I * ri | i * t ^ 0.05 thick Base' j i g

Bow94c

Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

TIP42C EQUIVALENT

Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
Contextual Info: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C

TIP 41 transistor

Abstract: tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147
Contextual Info: T Y P E S TIP 36, TIP36A, TIP36B, TIP36C P-N-P SINGLE-DIFFUSED M ESA SILICO N POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 3 5 , T IP 3 5 A , T IP 3 5 B , T IP 3 5 C

3055t

Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771
Contextual Info: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W| 3 3 3 3 3 80 80 90 100 115

tip 222 TRANSISTOR

Abstract: TIP127 Application Note transistor tip 107 dioda switching TIP 122 transistor darlington circuit tip 42 Tl 5153 TIP121 TEXAS TIP122 texas instrument TIP120
Contextual Info: TYPES TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR CO M PLEM EN TARY USE WITH TIP120, TIP121, TIP122 • 65 W at 25° C Case T emperature M in h F E o f 1000 at 3 V , 3 A • 5 A Rated Collector Current 50 mJ Reverse Energy Rating

bdx340

Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60

2n3055

Abstract: bd 3055
Contextual Info: POWER CASES TRANSISTORS ; _ P - 2 2 _ TQ- ?_ TQ- 220 T Y P E NPN PNP SDT 9302 SDT 9303 SDT 9304 SDT 9305 SDT 9306 SDT 9307 SDT 9308 SDT 9309 $ TIP 29 $ TIP 30 $ TIP 29A $ TIP 30A $ TIP 29B $ TIP 30B

2N5000

Abstract: circuit 2N 3055 TIP 122 transistor APPLICATION circuit transistor tip 5530 2N4998 tip 147 TRANSISTOR BD 147 TRANSISTOR TIP 411 TRANSISTOR tip 127 2N5148
Contextual Info: TYPES 2N4998, 2N5000, 2N5148, 2N5150 N-P-N SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITFT COMPUTER-DESIGNED ISOTHERMAL GEOMETRY For Complementary Use With 2N4999, 2N5001, 2N5147, and 2N5149 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

T1P147

Abstract: TEXAS INSTRUMENTS TIP145 B0738 transistor tip 35c TIP5530 TIP 122 transistor TIP142 T1P146 3055 5c pnp TIP141
Contextual Info: TYPES TIP145, TIP146, TIP147 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 1 4 0 , T IP 1 4 1 , TIP142 125 W at 25° C Case Temperature Min h p E 10-A Rated Collector Current 100 m j Reverse Energy Rating

TIP41C EQUIVALENT

Abstract: tip 147 TRANSISTOR equivalent TIP418 TIP 122 transistor TIP 41 transistor tip 127 TRANSISTOR equivalent TIP41A equivalent tip 147 TRANSISTOR tip 141 equivalent tlp418
Contextual Info: T Y P ES TIP41, TIP41A, TIP41B, TIP41C N -P -l SIN GLE-D IFFU SED M ESA SILICON POWER TRANSISTORS FO R P O W E R -A M P L IF IE R AN D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E WITH T IP 4 2 , T IP 4 2 A , TIP 4 2 B , T IP 42C

TIP 110 transistor

Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
Contextual Info: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature

Bow94c

Abstract: Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

Bow94c

Abstract: MTP3055A IRFZ22 mosfet b0334 BUZ11 SGSP222 BUZ10 STVHD90 SGS137 SGSD93G
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80