TIP 147 TRANSISTOR Search Results

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 40/141/142 HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A TO -3P MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE y . ' . W C om plem ent to TIP 145/146/147 ABSOLUTE MAXIMUM RATINGS

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 45/146/147 HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3P \A \ wh C om plem ent to TIP 140/141/142 ABSOLUTE MAXIMUM RATINGS

142 TRANSISTOR

Abstract: TIP140 TIP140F TIP141 TIP141F TIP142 TIP142F
Contextual Info: NPN EPITAXIAL TIP140/141 /142 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ V ce = 4V, IC = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3P • C om plem ent to TIP 145/146/147 ABSOLUTE MAXIMUM RATINGS

tip 147 TRANSISTOR

Abstract: tip 145 transistor transistor tip 142 TIP14 tip 146 TIP-14 tip147c tip 141 transistor transistor tip 146
Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145/146/147 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V ce = — 4V, lc = - 5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3P Com plement to TIP140/141/142 ABSOLUTE MAXIMUM RATINGS

Contextual Info: Zjï SGS-THOMSON ¡[LieraMe TIP140/141/142 TIPI 45/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . TIP141, TIP142, TIP145 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION

tip 142

Abstract: TIP142 TIP 147 TIP142 TIP147 P140 P145 TIP140 TIP141 TIP145 TIP146
Contextual Info: S A N Y O SEMICONDUCTOR NPN TIP140 TIP141 TIP142 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP145 TIP146 TIP147 60-80-100 VOLTS, 10 AMPERE HIGH CURRENT GAIN hFE = 4000 typ. @3V, 5A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @ 5A MONOLITHIC CONSTRUCTION WITH BUILT-IN

bdx340

Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60

tip 147 TRANSISTOR

Abstract: TIP147F TIP146F TIP145F
Contextual Info: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ Vce = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complement to T IP 140F /141F /142F ABSOLUTE MAXIMUM RATINGS C haracteristic

tip 147 transistor

Abstract: transistor tip 142 npn tip tip 141 transistor tip 35 c transistor
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 40/141/142 HIGH DC CURRENT GAIN MIN h FE = 1000 @ V ce * -4V , IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Com plem ent to TIP145/146/147 ABSOLUTE MAXIMUM RATINGS

Bow94c

Abstract: Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

BD633

Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
Contextual Info: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.

B0638

Abstract: BD638 TIP 122 100 V BD636 B0738 BD637 tip 42 darlington complementary power amplifier tip 142 BD634 73 5302
Contextual Info: BD634, BD636, BD638 PNP EPIBASE POWER TRANSISTORS IPRELIMINARY 873 Amplifier Switch Complementary Output Stages Complementary with BD633, BD635, BD637 mechanical data •— 6 , 0 - o ss l-i ! i J — 1.3 r r - - 16,5 , TT , I * ri | i * t ^ 0.05 thick Base' j i g

B0738

Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073
Contextual Info: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m

Bow94c

Abstract: MTP3055A IRFZ22 mosfet b0334 BUZ11 SGSP222 BUZ10 STVHD90 SGS137 SGSD93G
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

Bow94c

Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

bow94c

Abstract: BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SGSP461 SMD SJ 87 b0334 BUZ10
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

TIP42C EQUIVALENT

Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
Contextual Info: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C

tip45

Abstract: TIP14
Contextual Info: PNP EPITAXIAL TIP145/146/147 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P • C o m p le m e n t to TI P 1 4 0 /1 4 1 /1 4 2

TIP 41 transistor

Abstract: B0738 transistor tip 5530 e 3055 t tip 147 TRANSISTOR equivalent TRANSISTOR tip 127 texas instruments tip35 transistor tip 35c tip 127 TRANSISTOR equivalent TIP35C EQUIVALENT
Contextual Info: TYPES TIP35, TIP35A, TIP35B, TIP35C N-P-N SINGLE-DIFFUSED M E S A SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP36, TIP36A, TIP36B, TIP36C • 125 W at 25°C Case Temperature •

TIP 41 transistor

Abstract: tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147
Contextual Info: T Y P E S TIP 36, TIP36A, TIP36B, TIP36C P-N-P SINGLE-DIFFUSED M ESA SILICO N POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 3 5 , T IP 3 5 A , T IP 3 5 B , T IP 3 5 C

ksd 250v 10a

Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
Contextual Info: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715

3055 5C pnp transistor

Abstract: tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055
Contextual Info: TYPES TIP110, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH TIP 1 1 5 , T IP 1 1 6 , TIP 117 • High SO/1 Capability, 40 V and 1.25 A • 50 W at 2 5 °C Case Temperature •

tip 222 TRANSISTOR

Abstract: TIP127 Application Note transistor tip 107 dioda switching TIP 122 transistor darlington circuit tip 42 Tl 5153 TIP121 TEXAS TIP122 texas instrument TIP120
Contextual Info: TYPES TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR CO M PLEM EN TARY USE WITH TIP120, TIP121, TIP122 • 65 W at 25° C Case T emperature M in h F E o f 1000 at 3 V , 3 A • 5 A Rated Collector Current 50 mJ Reverse Energy Rating

T1P147

Abstract: TEXAS INSTRUMENTS TIP145 B0738 transistor tip 35c TIP5530 TIP 122 transistor TIP142 T1P146 3055 5c pnp TIP141
Contextual Info: TYPES TIP145, TIP146, TIP147 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 1 4 0 , T IP 1 4 1 , TIP142 125 W at 25° C Case Temperature Min h p E 10-A Rated Collector Current 100 m j Reverse Energy Rating