THETA JC OF FBGA Search Results

Contextual Info: White Electronic Designs W3E64M16S-XNBX 64Mx16 DDR SDRAM FEATURES „ DDR SDRAM rate = 200, 250, 266, 333* „ Package: BENEFITS „ • 60 Plastic Ball Grid Array PBGA , 10mm x 12.5mm x 1.5mm „ 1Gb upgrade to 512Mb 60 FBGA SDRAM „ 2.5V ±0.2V core power supply

W3E64M16S-XSBX

Contextual Info: White Electronic Designs W3E64M16S-XSBX 64Mx16 DDR SDRAM FEATURES „ DDR SDRAM rate = 200, 250, 266, 333* „ Package: BENEFITS „ • 60 Plastic Ball Grid Array PBGA , 10 x 12.5mm „ 1Gb upgrade to 512Mb 60 FBGA SDRAM „ 2.5V ±0.2V core power supply „

W3J512M32G

Abstract: M41K256M32
Contextual Info: W3J512M32G-XBX W3J512M32G T -XB2X W3J512M36/40G(T)-XB3X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.5V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800, 1,066, 1333 Mb/s  74% Space savings vs. FBGA  Packages:

M41K256M32

Contextual Info: W3J512M32K-XBX W3J512M36K T -XB2X W3J512M36/40K(T)-XB3X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.35V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800, 1,066, 1333 Mb/s  74% Space savings vs. FBGA  Packages:

MPR 55 F resistor

Abstract: M41K256M32
Contextual Info: W3J512M32G-XBX W3J512M32/36/40G T -XB2X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.5V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800, 1,066, 1333 Mb/s  74% Space savings vs. FBGA  Packages:  Reduced part count

W3J512M40G

Abstract: M41K256M32
Contextual Info: W3J512M32G-XBX W3J512M32GT-XB2X W3J512M40G T -XB3X *PRELIMINARY 2GB – 512M x 32/40 DDR3 SDRAM 1.5V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800, 1,066, 1333 Mb/s  74% Space savings vs. FBGA  Packages:  Reduced part count

M41K256M32

Contextual Info: W3J512M32K-XBX W3J512M32/36/40K T -XB2X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.35V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800, 1,066, 1333 Mb/s  74% Space savings vs. FBGA  Packages:  Reduced part count

Contextual Info: W3E64M16S-XBX *PRELIMINARY 64Mx16 DDR SDRAM Multi-Chip Package FEATURES GENERAL DESCRIPTION  DDR SDRAM rate = 200, 250, 266, 333* The 128MByte 1Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 2 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.

Contextual Info: W3H32M64EA-XSBX ADVANCED* 256MB – 32M x 64 DDR2 SDRAM Single-Rank 208 PBGA MCP FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  62% Space savings vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm

Contextual Info: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm

Contextual Info: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm

MT41K1G4

Abstract: 2Gb Micron
Contextual Info: Preliminary‡ 4Gb: x4, x8 1.35V TwinDie DDR3L SDRAM Features TwinDie DDR3L SDRAM MT41K1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT41K512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks Features Marking Options • Configuration – 64 Meg x 4 x 8 banks x 2 ranks – 32 Meg x 8 x 8 banks x 2 ranks

MT41K1G8

Abstract: MT41K2G4 A711 micron marking code information
Contextual Info: Preliminary‡ 8Gb: x4, x8 1.35V TwinDie DDR3L SDRAM Features TwinDie DDR3L SDRAM MT41K2G4 – 128 Meg x 4 x 8 Banks x 2 Ranks MT41K1G8 – 64 Meg x 8 x 8 Banks x 2 Ranks Features Marking Options • Configuration – 128 Meg x 4 x 8 banks x 2 ranks – 64 Meg x 8 x 8 banks x 2 ranks

MT41J256m8 fbga

Abstract: Micron quaddie micron marking code information Theta JC of FBGA DDR3 impedance 96 ball fbga thermal resistance micron DDR3 SDRAM micron QuadDie DDR3 78 ball fbga thermal resistance
Contextual Info: Preliminary‡ 8Gb: x4, x8 1.5V QuadDie DDR3 SDRAM Features QuadDie DDR3 SDRAM MT41J2G4 – 64 Meg x 4 x 8 Banks x 4 Ranks MT41J1G8 – 32 Meg x 8 x 8 Banks x4 Ranks Features Options • Configuration – 64 Meg x 4 x 8 banks x 4 ranks – 32 Meg x 8 x 8 banks x 4 ranks

MT41K2G8

Abstract: MT41K4G4 MT41K1GM4 micron technology 2013 Micron quaddie
Contextual Info: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3L SDRAM Features QuadDie DDR3L SDRAM MT41K4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41K2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Marking Options • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks

DDR3 SDRAM micron

Abstract: micron technology 2013 DDR3 impedance QuadDie DDR3
Contextual Info: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3 SDRAM Features QuadDie DDR3 SDRAM MT41J4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41J2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Options Marking • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks

MT41J1G8

Abstract: 8Gb DDR3 SDRAM twindie DDR3 SDRAM micron micron marking code information A1A4M DDR3 micron 4Gb DDR3 SDRAM DDR3 timing diagram MT41J2G4 Theta JC of FBGA
Contextual Info: Preliminary‡ 8Gb: x4, x8 1.5V TwinDie DDR3 SDRAM Features TwinDie DDR3 SDRAM MT41J2G4 – 128 Meg x 4 x 8 Banks x 2 Ranks MT41J1G8 – 64 Meg x 8 x 8 Banks x 2 Ranks Features Marking Options • Configuration – 128 Meg x 4 x 8 banks x 2 ranks – 64 Meg x 8 x 8 banks x 2 ranks

Contextual Info: W3H128M72ER-XNBX ADVANCED* 128M x 72 REGISTERED DDR2 SDRAM 255 PBGA FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  45% Space savings vs. FBGA  Package:  Reduced part count • 255 Plastic Ball Grid Array PBGA , 23 x 21mm  51% I/O reduction vs FBGA

Contextual Info: W3H64M72E-XSBX W3H64M72E-XSBXF 512MB – 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  30% Space saving vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm

Contextual Info: W3H64M64E-XSBX 512MB – 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  58% Space Savings vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm  43% I/O reduction vs FBGA

MT47H512M8

Contextual Info: 4Gb: x4, x8 TwinDie DDR2 SDRAM Functionality TwinDie DDR2 SDRAM MT47H1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT47H512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks For the latest component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options

Contextual Info: CY7C2263XV18/CY7C2265XV18 36-Mbit QDR II+ Xtreme SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency with ODT 36-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations Separate independent read and write data ports

Contextual Info: 2Gb: x4, x8 TwinDie DDR2 SDRAM Functionality TwinDie DDR2 SDRAM MT47H512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT47H256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks For the latest component data sheet, refer to Micron’s Web site: www.micron.com Functionality Options

Contextual Info: CY7C2268XV18/CY7C2270XV18 36-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency with ODT 36-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations • 36-Mbit density (2 M x 18, 1 M × 36)