667MBS Search Results

Contextual Info: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm

W3H32M72E-XSBX

Abstract: calibration definition
Contextual Info: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm

Contextual Info: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Programmable CAS latency: 3, 4, 5, or 6 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm

Contextual Info: White Electronic Designs W3H32M64E-XSBX ADVANCED* 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4 or 5 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 20mm

Contextual Info: White Electronic Designs W3H32M64E-XSBX 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Write latency = Read latency - 1* tCK „ Package: „ Commercial, Industrial and Military Temperature Ranges „ Organized as 32M x 64, user configurable as 2 x

W3H32M72E

Abstract: BA0BA12
Contextual Info: White Electronic Designs W3H32M72E-XSBX 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Programmable CAS latency: 3, 4, 5, or 6  Package:  Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm

Contextual Info: White Electronic Designs W3H64M72E-XSBX PRELIMINARY* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667*, 533, 400 „ Programmable CAS latency: 3, 4 or 5 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 22mm

W3H128M72

Abstract: W3H128M72E-XSBX W3H128M72E
Contextual Info: White Electronic Designs W3H128M72E-XSBX Advanced* 128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Package: „ CK/CK# Termination options available • 0 ohm, 20 ohm • 208 Plastic Ball Grid Array PBGA , 16 x 22mm

W3H32M72E

Contextual Info: White Electronic Designs W3H32M72E-XSB2X Preliminary 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Programmable CAS latency: 3, 4, 5, or 6  Package:  Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 20mm

Contextual Info: White Electronic Designs W3H32M72E-XSBX * 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Programmable CAS latency: 3, 4, 5, or 6 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm

W3H64M64E

Contextual Info: White Electronic Designs W3H64M64E-XSBX 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Write latency = Read latency - 1* tCK „ Package: „ Commercial, Industrial and Military Temperature Ranges • 1.0mm pitch „

AS4DDR264M72PBG

Abstract: H11M1
Contextual Info: iPEM 4.8 Gb SDRAM-DDR2 AS4DDR264M72PBG1 64Mx72 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • Proprietary Enchanced Die Stacked iPEM

Contextual Info: W3H64M72E-XSBX W3H64M72E-XSBXF 512MB – 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  30% Space saving vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm

84 FBGA

Abstract: W3H64M72E-XSBX fbga84 ccd400
Contextual Info: White Electronic Designs W3H64M72E-XSBX 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm „ Organized as 64M x 72 • 1.0mm pitch „ Weight: W3H64M72E-XSBX - 2.5 grams typical

Contextual Info: Product Nomenclature Guide: ZEÊÛđ½ƒãçٛ Logic Devices Incorporated Product Type 9D = DDR 2 = DDR2 3 = DDR3 Words 32M = 32 MB 64M = 64 MB 128M = 128 MB 256M = 256 MB 512M = 512 MB 1G = 1024 MB Wordwidth 32 = x32 64 = x64 72 = x72 80 = x80 S = Single Channel

H11M1

Contextual Info: i PEM 4.8 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR264M72PBG1 64Mx72 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit FEATURES „ „ „ BENEFITS „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp

W3H128M72E-XSBX

Abstract: 84 FBGA
Contextual Info: White Electronic Designs W3H128M72E-XSBX 128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Package:  CK/CK# Termination options available • 0 ohm, 20 ohm • 208 Plastic Ball Grid Array PBGA , 16 x 22mm  Posted CAS additive latency: 0, 1, 2, 3 or 4

18CO

Contextual Info: White Electronic Designs W3H64M64E-XSBX ADVANCED* 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm  Organized as 64M x 64 • 1.0mm pitch

W3H128M72ER-XSBX

Abstract: LDM-1 W3H128M72
Contextual Info: White Electronic Designs W3H128M72ER-XNBX PRELIMINARY* 128M x 72 REGISTERED DDR2 SDRAM 255 PBGA FEATURES  Data rate = 667, 533, 400 Mb/s  Posted CAS additive latency: 0, 1, 2, 3 or 4  Package:  Write latency = Read latency - 1* tCK  Commercial, Industrial and Military Temperature

Contextual Info: White Electronic Designs W3H64M72E-XSBX ADVANCED* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667*, 533, 400 „ Programmable CAS latency: 3, 4 or 5 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 22mm

Contextual Info: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm

Contextual Info: W3H128M72ER-XNBX ADVANCED* 128M x 72 REGISTERED DDR2 SDRAM 255 PBGA FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  45% Space savings vs. FBGA  Package:  Reduced part count • 255 Plastic Ball Grid Array PBGA , 23 x 21mm  51% I/O reduction vs FBGA

Contextual Info: W3H264M16E-XSBX 256MB – 2 x 64M x 16 DDR2 SDRAM 79 PBGA FEATURES BENEFITS  Data rate = 400 Mb/s, 533 Mb/s, 667 Mb/s  Larger ball pitch for higher reliability  Package:  Footprint compatible with W3H64M16E • 79 Plastic Ball Grid Array PBGA , 11 x 14mm

Contextual Info: W3H32M64E-XSBX 256MB – 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  62% Space savings vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm  42% I/O reduction vs FBGA