THE SUBCIRCUIT MODEL WAS EXTRACTED AND OPTIMIZED Search Results
THE SUBCIRCUIT MODEL WAS EXTRACTED AND OPTIMIZED Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLM15PX330BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN | |||
| BLM15PX600SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 60ohm POWRTRN | |||
| MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
| LQW18CN4N9D0HD | Murata Manufacturing Co Ltd | Fixed IND 4.9nH 2600mA POWRTRN | |||
| LQW18CNR33J0HD | Murata Manufacturing Co Ltd | Fixed IND 330nH 630mA POWRTRN |
THE SUBCIRCUIT MODEL WAS EXTRACTED AND OPTIMIZED Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SI5461EDCContextual Info: SPICE Device Model Si5461EDC P-Channel 20-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse |
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Si5461EDC | |
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Contextual Info: SPICE Device Model Si3407DV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si3407DV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SPICE Device Model SUP85N03-3m6P Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SUP85N03-3m6P 11-Mar-11 | |
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Contextual Info: SPICE Device Model SQD30N05-20L Vishay Siliconix N-Channel 55 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SQD30N05-20L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si8483DBContextual Info: SPICE Device Model Si8483DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MSOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si8483DB 11-Mar-11 | |
mos 6560
Abstract: diode M1
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SUM90N08-4m8P 11-Mar-11 mos 6560 diode M1 | |
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Contextual Info: SPICE Device Model SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SUM90N04-3m3P 11-Mar-11 | |
si23Contextual Info: SPICE Device Model Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si2324DS 11-Mar-11 si23 | |
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Contextual Info: SPICE Device Model SiA441DJ www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiA441DJ 11-Mar-11 | |
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Contextual Info: SPICE Device Model Si8416DB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si8416DB 11-Mar-11 | |
SI4202DYContextual Info: SPICE Device Model Si4202DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si4202DY 11-Mar-11 | |
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Contextual Info: SPICE Device Model SiR812DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiR812DP 11-Mar-11 | |
SIR878ADP
Abstract: sir878
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SiR878ADP 11-Mar-11 sir878 | |
S-112-302
Abstract: SiA436DJ 63605
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SiA436DJ 11-Mar-11 S-112-302 63605 | |
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Contextual Info: SPICE Device Model Si3437DV www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si3437DV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SQ4840EYContextual Info: SPICE Device Model SQ4840EY Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SQ4840EY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQ4840EY | |
63635
Abstract: Si8487DB
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Si8487DB 11-Mar-11 63635 | |
si8802Contextual Info: SPICE Device Model Si8802DB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si8802DB 11-Mar-11 si8802 | |
SI1922EDHContextual Info: SPICE Device Model Si1922EDH www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si1922EDH 11-Mar-11 | |
si2338
Abstract: Si2338DS
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Si2338DS 11-Mar-11 si2338 | |
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Contextual Info: SPICE Device Model SiS444DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiS444DN 11-Mar-11 | |
sis376dnContextual Info: SPICE Device Model SiS376DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiS376DN 11-Mar-11 | |
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Contextual Info: SPICE Device Model SQJ960EP Vishay Siliconix Dual N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SQJ960EP 11-Mar-11 | |
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Contextual Info: SPICE Device Model Si1428EDH www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si1428EDH 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |