SI3407DV Search Results

Si3407DV

Contextual Info: New Product Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V a - 8.0 • • • • Qg (Typ.) 21 nC TrenchFET Power MOSFET PWM Optimized

si3407

Abstract: SI3407DV-T1-GE3 Si3407DV
Contextual Info: Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V - 8.0a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V - 8.0a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V - 8.0a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0240 at VGS = - 4.5 V - 8a 0.0372 at VGS = - 2.5 V - 8a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

si3407

Abstract: Si3407DV
Contextual Info: SPICE Device Model Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

transistor c 6093

Abstract: c 6093 si3407 AN609 Si3407DV 68676
Contextual Info: Si3407DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When

Contextual Info: Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V - 8.0a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

si3407

Abstract: Si3407DV
Contextual Info: New Product Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V a - 8.0 • • • • Qg (Typ.) 21 nC TrenchFET Power MOSFET PWM Optimized

Contextual Info: SPICE Device Model Si3407DV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

PMO13701

Abstract: pacer oled pmo13701 SiT8002 W25X16VSS1G DP83848CVV/NOPB fairchild AG6 diode WINBOND W25X16 sitime osram t8 18 Osram HMI 270 electronic N
Contextual Info: Fusion Embedded Development Kit User’s Guide 2009 Actel Corporation. All rights reserved. Printed in the United States of America Part Number: 50200156-1 Release: August 2009 No part of this document may be copied or reproduced in any form or by any means without prior written

BSS138 NXP

Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
Contextual Info: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

AT45BD161D-SU

Abstract: PMO13701 USB 2.0 SPI Flash Programmer schematic fpga JTAG Programmer Schematics tp182 HDR4P Actel igloo TP181 J25-J27 KSC403J
Contextual Info: IGLOO PLUS Starter Kit User’s Guide Actel Corporation, Mountain View, CA 94043 2009 Actel Corporation. All rights reserved. Printed in the United States of America Part Number: 50200152-0 Release: March 2009 No part of this document may be copied or reproduced in any form or by any means without prior written

capacitor 47 nano

Abstract: EBMS321611B190 rpack 10k EBMS3216 USBLC6-2SC6-SOT23-6L FlashPro3 EBMS321611B190-1206 EBMS LIR2450 flashpro3 schematic
Contextual Info: IGLOO nano Starter Kit User’s Guide Actel Corporation, Mountain View, CA 94043 2009 Actel Corporation. All rights reserved. Printed in the United States of America Part Number: 50200146-0 Release: February 2009 No part of this document may be copied or reproduced in any form or by any means without prior written

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs