SIR812DP Search Results

SIR812DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIR812DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A SO-8	Original	PDF		9

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Vishay Siliconix SIR812DP-T1-GE3 MOSFET N-CH 30V 60A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SIR812DP-T1-GE3	Digi-Reel			1	1 $1.57 10 $1.57 100 $1.57 1000 $1.57 10000 $1.57	Buy Now
	SIR812DP-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SIR812DP-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIR812DP-T1-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip Stock	SIR812DP-T1-GE3		7,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIR812DP-T1-GE3			13 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Huntington SIR812DP-T1-GE3 MOSFET N-CH 30V 60A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SIR812DP-T1-GE3		6,000			1 - 10 - 100 $2.30 1000 $1.93 10000 $1.93	Buy Now

SIR812DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product SiR812DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.00145 at VGS = 10 V 60 0.00165 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 109 nC APPLICATIONS PowerPAK SO-8 6.15 mm • • • • 5.15 mm	Original	SiR812DP 2002/95/EC SiR812DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SiR812DP-T1-GE3 Contextual Info: New Product SiR812DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.00145 at VGS = 10 V 60 0.00165 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 109 nC APPLICATIONS PowerPAK SO-8 6.15 mm • • • • 5.15 mm	Original	SiR812DP 2002/95/EC SiR812DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: New Product SiR812DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.00145 at VGS = 10 V 60 0.00165 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 109 nC APPLICATIONS PowerPAK SO-8 6.15 mm • • • • 5.15 mm	Original	SiR812DP 2002/95/EC SiR812DP-T1-GE3 11-Mar-11	PDF
Contextual Info: SPICE Device Model SiR812DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiR812DP 11-Mar-11	PDF
Contextual Info: New Product SiR812DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.00145 at VGS = 10 V 60 0.00165 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 109 nC APPLICATIONS PowerPAK SO-8 6.15 mm • • • • 5.15 mm	Original	SiR812DP 2002/95/EC SiR812DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF