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SI5461EDC Datasheets (6)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
Si5461EDC		Vishay Intertechnology	P-Channel 20-V (D-S) MOSFET	Original	PDF	51.65KB	5
SI5461EDC		Vishay Telefunken	P-channel 20-v (d-s) Mosfet	Original	PDF	94.33KB	5
Si5461EDC SPICE Device Model		Vishay	P-Channel 20-V (D-S) MOSFET	Original	PDF	358.32KB	3
SI5461EDC-T1		Vishay Siliconix	P-Channel 20-V (D-S) MOSFET	Original	PDF	94.33KB	5
SI5461EDC-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.5A CHIPFET	Original	PDF		10
SI5461EDC-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.5A CHIPFET	Original	PDF		10

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Vishay Siliconix


Vishay Siliconix SI5461EDC-T1-E3 MOSFET; P-CH, 20V(D-S) 45MOHM CHIPFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SI5461EDC-T1-E3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $1.74	Get Quote
Vishay Siliconix SI5461EDC-T1-E3/BKN MOSFET; P-CH, 20V(D-S) 45MOHM CHIPFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SI5461EDC-T1-E3/BKN	Bulk			1	1 $1.90 10 $1.67 100 $1.67 1000 $1.67 10000 $1.67	Get Quote

SI5461EDC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
16562 Abstract: 4717 AN609 Si5461EDC Contextual Info: Si5461EDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si5461edc an609 20-jun-07 16562 +14717	PDF
Contextual Info: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.5 V - 5.4 0.082 at VGS = - 1.8 V - 4.6 • Halogen-free According to IEC 61249-2-21 Available • ESD Protectedb 5000 V	Original	si5461edc si5461edc-t1-e3 si5461edc-t1-ge3 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
SI5461EDC Contextual Info: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.045 @ VGS = -4.5 V -6.2 -20 0.060 @ VGS = -2.5 V -5.4 0.082 @ VGS = -1.8 V -4.6 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LA XX Lot Traceability	Original	si5461edc si5461edc-t1 18-jul-08	PDF
Si5461EDC Contextual Info: SPICE Device Model Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si5461edc 13-apr-01	PDF
Si5461EDC Abstract: marking code LA Contextual Info: Si5461EDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V –6.2 0.060 @ VGS = –2.5 V –5.4 0.082 @ VGS = –1.8 V –4.6 S 1206-8 ChipFET 1 D D G 5.4 kW D D D D G S Marking Code	Original	si5461edc s-03968--rev 28-may-01 marking code la	PDF
Si5461EDC Contextual Info: SPICE Device Model Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si5461edc 18-jul-08	PDF
SI5461EDC Contextual Info: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.045 @ VGS = -4.5 V -6.2 -20 0.060 @ VGS = -2.5 V -5.4 0.082 @ VGS = -1.8 V -4.6 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LA XX Lot Traceability	Original	si5461edc si5461edc-t1 08-apr-05	PDF
Si5461EDC Contextual Info: SPICE Device Model Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si5461edc s-51984rev 03-oct-05	PDF
Contextual Info: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.5 V - 5.4 0.082 at VGS = - 1.8 V - 4.6 • Halogen-free According to IEC 61249-2-21 Available • ESD Protectedb 5000 V	Original	si5461edc si5461edc-t1-e3 si5461edc-t1-ge3 11-mar-11	PDF
Si5461EDC Abstract: Si5461EDC-T1 marking code LA Contextual Info: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.045 @ VGS = -4.5 V -6.2 -20 0.060 @ VGS = -2.5 V -5.4 0.082 @ VGS = -1.8 V -4.6 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LA XX Lot Traceability	Original	si5461edc si5461edc-t1 s-21251--rev 05-aug-02 +1marking code la	PDF
Si5461EDC Abstract: 54kd Contextual Info: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.5 V - 5.4 0.082 at VGS = - 1.8 V - 4.6 • Halogen-free According to IEC 61249-2-21 Available • ESD Protectedb 5000 V	Original	si5461edc si5461edc-t1-e3 si5461edc-t1-ge3 18-jul-08 +154kd	PDF
Contextual Info: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.5 V - 5.4 0.082 at VGS = - 1.8 V - 4.6 • Halogen-free According to IEC 61249-2-21 Available • ESD Protectedb 5000 V	Original	si5461edc si5461edc-t1-e3 si5461edc-t1-ge3 2011/65/eu +22002/95/ec 12-mar-12	PDF
SI5461EDC Contextual Info: SPICE Device Model Si5461EDC P-Channel 20-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse	Original	si5461edc	PDF
SI5461EDC Contextual Info: Si5461EDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V –6.2 –20 0.060 @ VGS = –2.5 V –5.4 0.082 @ VGS = –1.8 V –4.6 1206-8 ChipFET S 1 D D D D D D G S Marking Code LA	Original	si5461edc s-03083--rev 12-feb-01	PDF

VN10KLS Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated	Original	si4831dy si4833dy si4852dy si4816dy +1410single vn50300l vn50300t ot-23 vn66afd vn10kls mosfet bs250 si4730 sup85n03-04p si4835dy si5504 si3459dv sup65p06 sub75p05	PDF
GS 069 Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no	Original	si9165 si9169 600-ma tssop-20 +12msop-10 sip1759 gs 069 si5902dc spice device model tsop6 marking 312 sc89-6 si7705dn si7100dn si3865bdv si5947du si3861bdv 1212-8	PDF