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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIS444DN-T1-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 35A POWERPAK1212	Original	PDF	547.31KB

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Vishay Intertechnologies


Vishay Intertechnologies SIS444DN-T1-GE3 Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W
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TME	SIS444DN-T1-GE3				1	1 $0.80 10 $0.65 100 $0.51 1000 $0.48 10000 $0.48	Get Quote

SIS444DN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiS444DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sis444dn an609 5026m 9517m +65502m 0125m 9585m 4917m 9905u 2453m	PDF
K134 Contextual Info: New Product SiS444DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) () Max.	Original	sis444dn 2002/95/ec sis444dn-t1-ge3 2011/65/eu +212-mar-12 k134	PDF
Contextual Info: New Product SiS444DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) () Max.	Original	sis444dn 2002/95/ec sis444dn-t1-ge3 11-mar-11	PDF
Contextual Info: New Product SiS444DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) () Max.	Original	sis444dn 2002/95/ec sis444dn-t1-ge3 11-mar-11	PDF
Contextual Info: New Product SiS444DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) () Max.	Original	sis444dn 2002/95/ec sis444dn-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SPICE Device Model SiS444DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sis444dn 11-mar-11	PDF
Contextual Info: New Product SiS444DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) () Max.	Original	sis444dn 2002/95/ec sis444dn-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: New Product SiS444DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) () Max.	Original	sis444dn 2002/95/ec sis444dn-t1-ge3 11-mar-11	PDF
Contextual Info: SPICE Device Model SiS444DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sis444dn 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
sir158 Abstract: q113 SiZ340DT SiR158DP N3X3 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - High- and Low-Side MOSFETs in One Compact Package AND TEC I INNOVAT O L OGY PowerPAIR N HN POWER MOSFETs O 19 62-2012 Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes KEY BENEFITS	Original	siz790dt siz914dt vmn-pt0182-1209 sir158 +4q113 siz340dt sir158dp n3x3	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF