TGA10 Search Results

TGA1073C

Abstract: TGA1073C-SCC
Contextual Info: Product Datasheet August 15, 2000 36 - 40 GHz Power Amplifier TGA1073C-SCC Key Features and Performance • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 26 dBm Nominal Pout @ P1dB, 38GHz 15 dB Nominal Gain Bias 5-7V @ 240 mA Chip Dimensions 2.4 mm x 1.45 mm

ku vsat amplifier

Abstract: "ku band" amplifier TGA1045-EPU
Contextual Info: Advance Product Information Ku Band Power Amplifier TGA1045-EPU Key Features and Performance Primary Applications • • • • • • Ku band Satellite Ground Terminal • VSAT • Point-to-Point Radio HFET Technology 12.5 -15.5 GHz Frequency Range > 3W Nominal Pout

GaAs pHEMT MMIC medium power amplifier

Abstract: TGA1073A TGA1073A-SCC
Contextual Info: Product Datasheet August 15, 2000 26- 34 GHz Medium Power Amplifier TGA1073A-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL Bias 5 - 7V @ 220 mA

Contextual Info: TriQuint <+ Advance Product Information SEMICONDUCTOR* 26- 34 GHz Medium Power Amplifier TGA1073A Prototype Part #, Production Part # TBD Key Features and Performance 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL

TGA1073B-SCC

Contextual Info: Product Datasheet February 13, 2001 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA

Contextual Info: TriQuint SEMICONDUCTOR, Advance Product Information 26-29 GHz Medium Power Amplifier Key Features and Performance TGA1081-EPU Primary Applications Production version of TGA9058 0.25um pHEMT Technology 26 GHz - 29 GHz Frequency Range Nominal Pout 22dBm @ 1dB GC

Contextual Info: TriQuint €► Advance Product Information SEMICONDUCTOR« 36 - 40 GHz Power Amplifier TGA1071-EPU Key Features and Performance 0.25um pHEMT Technology 36-40 GHz Frequency Range 22 dBm Nominal Pout @ P1dB 15 dB Nominal Gain 5V, 120 mA Bias Chip Dimensions 3.4mm x 2.1 mm

TGA9058

Abstract: 8504 TGA1081 TGA1081-EPU
Contextual Info: Advance Product Information 26-29 GHz Medium Power Amplifier Key Features and Performance • • • • • • TGA1081-EPU Primary Applications Production version of TGA9058 0.25um pHEMT Technology 26 GHz - 29 GHz Frequency Range Nominal Pout 22dBm @ 1dB GC

Contextual Info: Product Datasheet January 17, 2005 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA

TGA1073A

Abstract: TGA1073A-SCC
Contextual Info: Product Data Sheet November 6, 2002 26 - 35 GHz Medium Power Amplifier TGA1073A-SCC Key Features and Performance • • • • • • 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL Bias 5 - 7 V @ 220 mA 0.25-µm mmW pHEMT 2MI Technology

TGA1081

Contextual Info: Product Data Sheet August 5, 2008 26-29 GHz Medium Power Amplifier Key Features and Performance • • • • • • • TGA1081 Primary Applications Production version of TGA9058 0.25um pHEMT Technology 26 GHz - 29 GHz Frequency Range Nominal Pout 22dBm @ 1dB GC

TGA1073A

Abstract: 75TH
Contextual Info: Advance Product Information 26- 34 GHz Medium Power Amplifier TGA1073A Prototype Part #, Production Part # TBD Key Features and Performance • • • • • • 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL

TGA1073G

Contextual Info: Advance Product Information 19 - 27 GHz Medium Power Amplifier TGA1073G Prototype Part #, Production Part # TBD Key Features and Performance • • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA Chip Dimensions 2.55 mm x 1.15mm

TGA1073G

Abstract: D549 TGA91073G
Contextual Info: TriQuint <% SEMICONDUCTOR, Advance Product Information 1 9 - 2 7 GHz Medium Power Amplifier TGA1073G Prototype Part #, Production Part # TBD Key Features and Performance 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA

TGA1055

Abstract: TGA1055-EPU ultrasonics circuits diagram
Contextual Info: Advance Product Information Ka Band 2 Watt Power Amplifier Key Features and Performance • • • • • • TGA1055-EPU Primary Applications 0.25 um pHEMT Technology 20 dB Nominal Gain 2W Nominal Pout -30 dBc IMR3 @ 26 dBm SCL Bias 7V @ 1.4 A Chip Dimensions 5.89 mm x 3.66 mm

TGA9070

Contextual Info: Advance Product Information 23 - 29 GHz High Power Amplifier TGA1088-EPU Key Features and Performance • • • • • • • • 0.25um pHEMT Technology 23 GHz - 29 GHz Frequency Range Nominal 1 Watt 28GHz @ P1dB Nominal Gain of 23 dB OTOI 38 dBm typical (Linear Mode)

ku vsat amplifier

Contextual Info: Advance Product Information January 9,2001 Ku Band Power Amplifier TGA1045-EPU Key Features and Performance Primary Applications • • • • • • Ku band Satellite Ground Terminal • VSAT • Point-to-Point Radio HFET Technology 12.5 -15.5 GHz Frequency Range

Contextual Info: TriQuirit <<Ê Advance Product Information BEMfWNDUGTQM» 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B Prototype Part #, Production Part # TBD Key Features and Performance 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V

Contextual Info: TrìQuint SEMICONDUCTOR Advance Product Information Ka Band Power Amplifier TGA1055-EPU Key Features and Performance Primary Applications 0.25um pHEMT Technology LMDS 26.5 - 29 GHz Frequency Range 2W Nominal Pout at 29 GHz Point-to-Point Radio 20 Nominal Gain

Contextual Info: TriQuint SEMICONDUCTOR. Advance Product Information 26- 34 GHz Medium Power Amplifier TGA1073A Prototype Part #, Production Part # TBD Key Features and Performance 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL

TGA1073G

Abstract: 75TH TGA1073A TGA1073B TGA1073C
Contextual Info: TriQuint mmWave MMICs Statistical Performance Summary September 11, 2000 TGA1135 statistical performance summary Page 1 TGA1073A Statistical On-Wafer Performance Summary 24 22 -5 20 5th 18 25th 50th 16 75th 14 95th Input Return Loss dB Gain (dB) 3 Lots, 14 Wafers, 11792 Samples

TGA1073G

Abstract: GaAs pHEMT MMIC medium power amplifier TGA1073G-SCC
Contextual Info: Product Datasheet August 15, 2000 19 - 27 GHz Medium Power Amplifier TGA1073G-SCC Key Features and Performance • • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA Chip Dimensions 2.55 mm x 1.15mm Primary Applications

X0205

Contextual Info: TriQuint % Advance Product Information SEMICONDUCTOR, 37-41 GHz 0.4W MMIC PA TGA1073C Prototype Part #, Production Part # TBD Key Features and Performance 0.25um pHEMT Technology 16 dB Nominal Gain 26 dBm Nominal Pout @ P1dB -34 dBc IMR3 @ 16 dBm SCL Bias 5 -7V @ 240 mA

8950A

Contextual Info: TriQuint Advance Product Information SEMiCQNDUCTÖR 36-40 GHz Power Amplifier Key Features and Performance 0.25um pHEMT Technology 36-40 GHz Frequency Range 22 dBm Nominal Pout @ P1dB TGA1071-EPU Primary Applications Point-to-Point Radio Release Status 15 dB Nominal Gain