800UM Search Results

Contextual Info: TGF2080 800um Discrete GaAs pHEMT Applications •     Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features        Functional Block Diagram Frequency Range: DC - 20 GHz 29.5 dBm Typical Output Power - P1dB

Contextual Info: TGF2080 800um Discrete GaAs pHEMT Applications • • • • • Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 20 GHz 29.5 dBm Typical Output Power - P1dB

GaAs pHEMT MMIC medium power amplifier

Abstract: TGA1073A TGA1073A-SCC
Contextual Info: Product Datasheet August 15, 2000 26- 34 GHz Medium Power Amplifier TGA1073A-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL Bias 5 - 7V @ 220 mA

Contextual Info: TriQuint <+ Advance Product Information SEMICONDUCTOR* 26- 34 GHz Medium Power Amplifier TGA1073A Prototype Part #, Production Part # TBD Key Features and Performance 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

AN-1484

Abstract: lm3478 schematic LM3478 AN1484 Si4442DY sepic converter sepic 2L mosfet AN201948-05-JP AN201948
Contextual Info: ご注意：日本語のアプリケーション・ノートは参考資料として提供しており内容が 最新でない場合があります。製品のご使用に際しては、必ず最新の英文アプ リケーション・ノートをご確認ください。

LM3478

Abstract: LM34781 AN-1286 AN1286
Contextual Info: 美国国家半导体公司 应用注释1286 Chance Dunlap 2008年4月8日 LM3478是用于开关型稳压的低侧N沟道控制器。像许多 LM3478数据手册中所讨论的开关器的基本原理。检查图1 中 开关型控制器一样，当用户确定补偿方案时，器件选择中所

PCB design for very fine pitch csp package

Abstract: gold embrittlement joint IRF6100 IRF6150 with or without underfill process of mosfet
Contextual Info: FlipFETTM MOSFET Design for High Volume SMT Assembly Hazel Schofield, Tim Sammon, Aram Arzumanyan, Dan Kinzer. International Rectifier Introduction & Summary International Rectifier has used a proprietary technique to position all the terminals of a HEXFET device on the same face of the die. This has enabled the development of wafer scale

Contextual Info: epitex Opto-Device & Custom LED Super Beam type LED FL750-03-80 PRELIMINARY FL750-03-80 High Power type LED FL750-03-80 is an AlGaAs LED mounted on a lead frame and molded with super beam lens. On forward bias, it emits a band of visible light which peaks 750nm.

Contextual Info: epitex LED CHIP ＬＥＤ CN850-802 Opto-Device & Custom LED SPECIFICATION OF LED CHIP CN850-802 [INFRARED] 1 Commodity Type and Physical Characteristics. 1. Material GaAlAs/GaAlAs DDH) 2. Electrode Top Side P (anode) side : Au Alloy Bottom Side N (cathode) side : Au Alloy

Contextual Info: epitex Opto-Device & Custom LED Super Beam type LED FL740-03-80 PRELIMINARY FL740-03-80 High Power type LED FL740-03-80 is an AlGaAs LED mounted on a lead frame and molded with super beam lens. On forward bias, it emits a band of visible light which peaks 740nm.

TGA1073A

Abstract: 75TH
Contextual Info: Advance Product Information 26- 34 GHz Medium Power Amplifier TGA1073A Prototype Part #, Production Part # TBD Key Features and Performance • • • • • • 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL

TGA1073G

Contextual Info: Advance Product Information 19 - 27 GHz Medium Power Amplifier TGA1073G Prototype Part #, Production Part # TBD Key Features and Performance • • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA Chip Dimensions 2.55 mm x 1.15mm

TGA1073G

Abstract: D549 TGA91073G
Contextual Info: TriQuint <% SEMICONDUCTOR, Advance Product Information 1 9 - 2 7 GHz Medium Power Amplifier TGA1073G Prototype Part #, Production Part # TBD Key Features and Performance 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA

LM3478

Abstract: AN-1286
Contextual Info: ご注意：日本語のアプリケーション・ノートは参考資料として提供しており内容が 最新でない場合があります。製品のご使用に際しては、必ず最新の英文アプ リケーション・ノートをご確認ください。

Contextual Info: TriQuint SEMICONDUCTOR. Advance Product Information 26- 34 GHz Medium Power Amplifier TGA1073A Prototype Part #, Production Part # TBD Key Features and Performance 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL

max 628 application sheet buck boost converter

Abstract: CDRH6D38NP-100 LT1941 LT1941EFE SIMPLE SWITCHER 3A Step-up negative Voltage Reg Dropping Diode 200A 16V
Contextual Info: LT1941 Triple Monolithic Switching Regulator FEATURES DESCRIPTION n The LT 1941 is a triple current mode DC/DC converter with internal power switches. Two of the regulators are step-down converters with 3A and 2A power switches. The third regulator can be configured as a boost, inverter

82386

Abstract: 134235 RF transmitter 433.92 3 pin 5v ablebond 84-1 LMI storage
Contextual Info: AMMC-6222 7 to 21 GHz GaAs High Linearity Low Noise Amplifier Data Sheet Chip Size: 800 m x 2000μm 31.5 x 78.74 mils Chip Size Tolerance: ±10 μm (±0.4 mils) Chip Thickness: 100 ± 10 μm (4 ±0.4 mils) Pad Dimensions: 100 x 100 μm (4 x 4 mils) Description

Contextual Info: DA6281.001 26 March 2007 MAS6281 IC FOR 13.00 – 52.00 MHz XO This is advance information on a new product under development. Micro Analog Systems Oy reserves the right to make any changes without notice. • • • • Low Cost Divider Options up to fo/512

Contextual Info: epitex Opto-Device & Custom LED Super Beam type LED FL710-03-80 Lead Pb Free Product – RoHS Compliant FL710-03-80 High Power type LED FL710-03-80 is an AlGaAs LED mounted on a lead frame and molded with super beam lens. On forward bias, it emits a band of visible light which peaks 710nm.

Contextual Info: epitex LED CHIP ＬＥＤ CN870-80 Opto-Device & Custom LED SPECIFICATION OF LED CHIP CN870-80 [INFRARED] 1 Commodity Type and Physical Characteristics. 1. Material GaAlAs/GaAlAs DDH) 2. Electrode Top Side P (anode) side : Au Alloy Bottom Side N (cathode) side : Au Alloy

Contextual Info: epitex Opto-Device & Custom LED Super Beam type LED FL850-03-80 Lead Pb Free Product – RoHS Compliant FL850-03-80 High Power type LED FL850-03-80 is an AlGaAs LED mounted on a lead frame and molded with super beam lens. These devices are intended to be operated at pulsed current of 4A under maximum 4.5V

TGA1073G

Abstract: GaAs pHEMT MMIC medium power amplifier TGA1073G-SCC
Contextual Info: Product Datasheet August 15, 2000 19 - 27 GHz Medium Power Amplifier TGA1073G-SCC Key Features and Performance • • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA Chip Dimensions 2.55 mm x 1.15mm Primary Applications

Contextual Info: LT1941 Triple Monolithic Switching Regulator FEATURES n n n n n n n n n DESCRIPTION The LT 1941 is a triple current mode DC/DC converter with internal power switches. Two of the regulators are step-down converters with 3A and 2A power switches. The third regulator can be configured as a boost, inverter