12PER Search Results

Contextual Info: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Contextual Info: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:

NT1GC72B89A0NF

Abstract: 128MX8 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600
Contextual Info: NT1GC72B89A0NF / NT2GC72B8PA0NF NT1GC72B89A1NF / NT2GC72B8PA1NF 1GB: 128M x 72 / 2GB: 256M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency

AMPAL22V10

Contextual Info: A m P A L 2 2 V 1 0-1 5 24-Pin IM O X III7“ Program m able Array Logic P R E L IM IN A R Y Distinctive Characteristics • • • • • • • • • 15-ns perform ance Increased logic pow er — up to 22 inputs and 10 outputs Increased product term s — average 12 per output

AM 22V10

Abstract: Resistor Fuse 4.91 AMD 22V10 ampal
Contextual Info: AmPAL*22V10 24-Pin IMOX Programmable Array Logic PAL • • Second-generation PAL architecture Increased logic power — up to 22 inputs and 10 outputs Increased product terms — average 12 per output Variable product term distribution improves ease of use

k4b2g1646q

Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
Contextual Info: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

IS46TR

Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
Contextual Info: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        

Contextual Info: Product Specifications PART NO.: VL41D1G63B-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM LOW VOLTAGE ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41D1G63B is a 1Gx72 DDR3 SDRAM high density SO-UDIMM. This dual rank memory module consists of

Contextual Info: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Contextual Info: Product Specifications PART NO.: VL33B1K68F-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ULP ECC REGISTERED DIMM 240-PIN Description The VL33B1K68F is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module is dual rank, consists of eighteen stacked CMOS 1Gx4 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

Contextual Info: Product Specifications PART NO.: VL41D5763B-K0/K9/F8S REV: 1.0 General Information 2GB 256Mx72 DDR3 SDRAM LOW VOLTAGE ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41D5763B is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This single rank memory module consists

Contextual Info: Product Specifications PART NO.: VL43B1G63A-K0/K9/F8/E7S REV: 1.1 General Information 8GB 1Gx72 DDR3 SDRAM ECC REGISTERED SO-RDIMM 204-PIN Description The VL43B1G63A is a 1Gx72 DDR3 SDRAM high density RDIMM. This dual rank memory module consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

micron ddr3

Abstract: DDR3 timing diagram DDR3 model verilog codes Verilog DDR3 memory model micron memory model for ddr3 MT41J128M8 Verilog DDR memory model DDR3 "application note" DDR3 DQ flip flop IC
Contextual Info: Maxim > Design Support > App Notes > T/E Carrier and Packetized > APP 5120 Keywords: DDR1, DDR3, jitter, buffer, TDMoP, TDM over packet, DDR, SDRAM, PDV, PSN, double data rate APPLICATION NOTE 5120 Aug 26, 2011 Using a DDR3 Memory Module with the DS34S132

Contextual Info: W632GU6KB 16M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5

NT5CB64M16AP-CF

Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
Contextual Info: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )

W631GG6KB-12

Abstract: W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I
Contextual Info: W631GG6KB 8M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5

W631GU8KB15K

Contextual Info: W631GU8KB 16M  8 BANKS  8 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5

W632GG6KB

Abstract: W632GG6KB15I
Contextual Info: W632GG6KB 16M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5

NT5CB256

Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
Contextual Info: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800

Contextual Info: Product Specifications PART NO: REV: 1.1 VL41B5663A-K9S-F8S-E7S General Information 2GB 256MX72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description: The VL41B5663A is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM

Contextual Info: Product Specifications PART NO.: VL33B1K63A-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC REGISTERED DIMM 240-PIN Description The VL33B1K63A is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module is four rank, consists of thirty-six CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, a 28-bit registered

Contextual Info: Product Specifications PART NO.: VL47B1G63A-K0-K9-F8-E7S-S1 REV: 1.0 General Information 8GB 1Gx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B1G63A is a 1Gx64 DDR3 SDRAM high density SODIMM. This memory module is dual rank, consists of

Contextual Info: Product Specifications PART NO.: VL41B5263A-K9S/F8S/E7S-S1 REV: 1.0 General Information 4GB 512MX72 DDR3 SDRAM ECC SO-UDIMM 204 PIN Description The VL41B5263A is a 512Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of eighteen CMOS 256M x 8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages and a 2K EEPROM in an 8-pin MLF

Contextual Info: Product Specifications PART NO: VL53B5263A-K9S-F8S-E7S REV: 1.0 General Information 4GB 512MX72 DDR3 SDRAM ECC 244 PIN Mini-RDIMM Description: The VL53B5263A is a 512Mx72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of eighteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered