TFK 10 Search Results

tfk 140

Abstract: 3 TFK 140 TFK 400 EFNF-10 6 TFK 140 wire awg 18 TFK S 2X2200 Evox EFNF-3 filter tfk3
Contextual Info: TFK EFN EFN, TFK Inside apparatus mounted filter for industrial applications General-purpose single stage filters EFN and TFK-1 with solderable faston connectors at both ends; TFK 3, 6 and 10 with either solderable faston connectors or wires at both ends. EFN gives good protection against both common

TFK 305

Abstract: tfk 226 0/TFK 036
Contextual Info: A tfK c m "INTERCONNECT DIVISION OSX Microminiature Snap-On Connectors and Adapters OSX subminiature snap-on connectors from M/A-COM are an excellent blend of size, weight, durability and performance for applications such as GPS, automotive and wireless communications. OSX connectors are 30% smaller

Vishay LCD

Abstract: LCD-160H128B-TFK-VZ LCD-160H128B
Contextual Info: LCD-160H128B-TFK-VZ www.vishay.com Vishay 160 x 128 Graphic LCD FEATURES • Type: Graphic • Display format: 160 x 128 dots • Built-in controller: RA6963 • Duty cycle: 1/128 • + 5 V power supply • Optional N.V. • Material categorization: For definitions of compliance

DSX151G

Contextual Info: CRYSTAL RESONATORS SMD Type H ll£tS !!7K IiJS i!i? DSX151G SERIES □ S X I5 lG iz K IltlS ]T -£ tfK U /c tz ^5 + 4 7 The DSX151G is a compact product featuring high resistance to the environment, out­ standing stability and high reliability. Xs DV/K-Xu

TFK 082

Abstract: J1 TRANSISTOR
Contextual Info: ß tfk c m 1 m a n A M P com pany Wireless Bipolar Power Transistor, 12W PH1617-12N 1.6-1.7 GHz y/b Features £4 /7 '25 • • • • • • • ( 18 . 4 2 ) NPN Silicon M icrow ave P ow er T ran sisto r D esigned fo r L inear A m plifier A pplications

ic ta 7699

Abstract: 2SB176 2SB172 2SB177 TC 4863 GE PNP ALLOY JUNCTION
Contextual Info: 2 SB17 2 , 2 SB1 76, 2SB177 2SB172, 2SB176, 2SB177 2SB177: PNP ^ /M A IN T E N A N C E PNP Alloy Junction Power Amplifier 4$ ^ /F e a tu r e s • B y^"C 0.4W "fo • 0. 4 W output in class B push-pull amplifier tk'k'M tfk /A b solu te Maximum Ratings (Ta=25°C)

tfk 914

Abstract: TFK 914 D transistor 81 120 w 63 cmi Transistor Mt 100
Contextual Info: A tfK Q M m an A M P com pany Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10% Duty 1.2-1.4 GHz PH1214-30EL V2.00 820 Features • • • • • • • • C20B3 NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C o n fig u ratio n B ro a d b an d Class C O p e ra tio n

Contextual Info: Toggle sw itch e s TL FE A T U R E S G v tfK c d to m - s - s m • FnvYorm C fitiXoo f sealing • • 1,2, an d 4 p o tc cvcvfty. • Standard ondpvQ to unlock fevers. • 2 an d 3 po sitio n , m atototo* ct an d m o­ m entary toggle actio n • Temperaturerange: -6 5 "F lo +1&TF

BA1310

Abstract: BAI310 560mVrms 3AA1
Contextual Info: . R .o h m QUALITY- RELIABILITY BA i 310 ;l. s P L L JjxK ft iStifFI L t FM 7 JU9 J U v ? ^ (Physical Dimensions U /j f S f c H & B ilC r ? « P L L # j£ t f)fc tfK æ¿ft u % r - r « £ fcs * n « . s . b < K t < r o • « ft (Features) j. PLi.-^^vlîîFnwrwiHiffêv ; i / ; ^ b

TFK 175

Contextual Info: A tfK Ô M m an A M P com pany 10W GaAs SPDT Switch DC-3 GHz MASW2020G V 2 .0 0 Features QNO 1 B1 COM RF1 GND 2 • V e r y l l i g l i P o w e r, l W atts I tl H C o m p r e s s i o n <f«-l()V • l.o w In s e r tio n Loss, 0. I d B T y p i c a l @ I C iH z

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

IR diodes TFK 4

Abstract: TFK 225 tfk 635 TFK diodes tfk 605 TSIP 5200 TFK BPW 41 N IR diodes TFK BPW 41 N tfk smd TFK BPW 20
Contextual Info: Vishay Telefunken Tape and Reel Standards Vishay Telefunken offers T-1 3 mm and T-13/4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC publication 286, taking into account the industrial requirements for auto­

tfk bpw 77

Abstract: TFK BPW 83 TFK diodes TFK 705 tfk 605 IR diodes TFK 4 TFK 451 TFK BPW 41 N BPW 83 TFK IR diodes TFK BPW 41 N
Contextual Info: Vishay Telefunken Tape and Reel Standards Vishay Telefunken offers T-1 3 mm and T-13/4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC publication 286, taking into account the industrial requirements for automatic insertion.

IR diodes TFK 4

Abstract: TFK diodes IR diodes TFK BPW 41 N tfk 19 TFK 451 TFK 705 tfk 605 TSAL6200 TFK BPW 41 N TFK 52
Contextual Info: Vishay Telefunken Tape and Reel Standards Vishay Telefunken offers T-1 3 mm and T-13/4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC publication 286, taking into account the industrial requirements for automatic insertion.

Westinghouse Motor protection relay

Abstract: westinghouse breaker UL1203 Square D KAL Breaker westinghouse power circuit breakers SPACE HEATER Cutler-Hammer 225 amp circuit breaker EBMBB-TTTEB32 Westinghouse Cutler-Hammer LD
Contextual Info: 2: 5: SYS19: BASE2 PDFINFO 50: 95: 98: JOB: CRMAIN06-0366-1 Name: 3C-366 3C 100: DATE: JAN 19 2006 Spectrum EBM TM hinged cover motor control enclosures are used: ɀ For general motor control and circuit protection – indoors and outdoors – in damp, wet, dirty, dusty hazardous locations without

transistor Bc 540

Abstract: tfk 540 TFK 212 TRANSISTOR BC 212 bc 212 BC212 BC 540 TRANSISTOR
Contextual Info: SHi2:ium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and driver stages Besondere Merkmale: Features: • • • • Verlustleistung 300 mW • In G ruppen so rtie rt

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

Contextual Info: E lP IN HEADER? .100" 2.5 4 m m HIGH PROFILE PIN HEADER SPECIFICATION * Current Rating: 3 A * Withstanding Voltage: 500 VAC ( 1 min.) * Insulation Resistane«: 1000 Mn min. * Contact Resistance: 20 m il max. * Operating Temperature: •40*C to +85*C ;’,v :

Contextual Info: PART NO. NO. OF POS 20014-020-& 20P » -030-8* 30P n — 040-8* 40P " -050-8* SOP h ” 060—8* 60P m -080-8* 80P // -100-8* 100P 20076-020-* 20P —030— 30P '* -040-8* 40P f/ — 050—8* SOP ft — Q60—8* 60P " -080-8* 80P i f —100“ 8* 100P A 11.43

TFK 450 B2

Abstract: tfk bcy 59 TFK 79 tfk bcy 58 BCY79 BCY790 75558 BCY78 BCY 59
Contextual Info: BCY 78 • BCY 79 'W Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W • Power dissipation 1 W

Contextual Info: o CO CO o Material and Finish 4 Insulator: 0 High Temp., UL94V-0-Rated *-N CO Contact: Phosphor Bronze O 3. Contact Plating Options: Standard: Gold flash on contact area, tin on soldertails, all over nickel underplate 10 CNI T- 10 30 Option: 30u" Gold on contact area,

BZ102

Abstract: TFK U 217 B bz102-2v8 5V stabilisator f 102 TFK 19 001
Contextual Info: BZ 102/. Silizium-Diffusions-Stabilisator-Dioden Silicon diffusion voltage stabilising diodes Anwendungen: Spannungsstabilisierung und Spannungsbegrenzung Applications: Voltage stabilisation and voltage regulation Abmessungen in mm Dimensions in mm Normgehäuse

42t sot-23

Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

TFK E 1024

Abstract: TFK 351
Contextual Info: DEC T 1992 4M egx 1 Monolithic DRAM m o l a i e MDM14001-80/10/12 issue 1.2 : December 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 4,194,304 x 1 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns Available in 20 Pin DIP, 20 & 24 Pin VIL