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    efnf-10 Datasheets

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    EFNF-10

    Abstract: No abstract text available
    Text: ,8 0,1 2 x 2200 85 EFNF-10 10 0,2 2 x 0,3 0,1 2 x 2200 85 Connectors , Chassis mounted filter EFNF Chassis mounted filter for industrial applications General purpose filter with single stage circuitry. Applications: Systems and installations · · 1 ­ 10 A current ratings UL, CSA, VDE, S, N, D, FI Operating voltage: Operating frequency: Temperature range: 250 VAC 0 ­ 400 Hz -25°C - +85°C Type Rated current [A] (40°C) Max. Leakage current [mA


    Original     		PDF EFNF-10 EFNF-10

    tfk 140

    Abstract: 3 TFK 140 TFK 400 EFNF-10 6 TFK 140 wire awg 18 TFK S 2X2200 Evox EFNF-3 filter tfk3
    Text: 0.1 0.1 TFK-3, 6, 10 o ky OHi' EVOX o -m iU c y cv S! Q EFNF-1 TFKF-1 EFNF-3 TFKF-3 TFKW-3 EFNF-6 TFKF-6 TFKW-6 EFNF-10 TFKF- 10 TFKW- 10 Connectors: F = Faston 6.3 x 0.8, W = , single stage filters EFN and TFK-1 with solderable faston connectors at both ends; TFK 3, 6 and 10 with , connection p/ n /e -140 . Nominal current 3A 6A 10 A Wire AWG 18 AWG 16 AWG 14 EFN, TFK , [mA] [mH] [A] (40°C) (250V 50 Hz) 1 1 3 3 3 6 6 6 10 10 10 2x0.21 2x0.21 2x0.21 2x0.21 2x0.21 2x0.21


    OCR Scan     		PDF 2x2200 tfk 140 3 TFK 140 TFK 400 EFNF-10 6 TFK 140 wire awg 18 TFK S Evox EFNF-3 filter tfk3

    lm3240

    Abstract: RSQ035P03 EMP11 smd transistor 6c5 HTRM800 CY62148E inverter ABB ACS 300 BAS70WT ABB inverter motor fault code abb inverter manual acs 800
    Text: ! micro nano pico 10 <12> 10 <9> 10 (6) 10 <3> to 1Q('3> 10 <‘6) 10 <‘9> 10 <‘12) t g M k m p n p \ 2


    OCR Scan     		PDF P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U P468-ND LNG995PF8W AT-DE071) lm3240 RSQ035P03 EMP11 smd transistor 6c5 HTRM800 CY62148E inverter ABB ACS 300 BAS70WT ABB inverter motor fault code abb inverter manual acs 800

    2002 - mt3514

    Abstract: mt2502 KBPC606 ASEA+EG+10 B250C500 b40c3700 B40C500 B500C1000 B80-C zener+diode+phc+10
    Text: 40 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 0.8 AMPERES / WOB , 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / WOB B40C1000 B80C1000 B125C1000 B250C1000 B380C1000 B500C1000 100 200 300 600 900 1200 1.0 1.0 1.0 1.0 1.0 1.0 50 50 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / DIL DF005 DF01 DF02 DF04 DF06 DF08 DF10 50 100 200 400 600


    Original     		PDF B40C800 B80C800 B125C800 B250C800 B380C800 B500C800 45osed KBPC5000GS KBPC5001GS KBPC5002GS mt3514 mt2502 KBPC606 ASEA+EG+10 B250C500 b40c3700 B40C500 B500C1000 B80-C zener+diode+phc+10

    2003 - GFM 64A

    Abstract: GDV 64A GFM 85A 625 GFG SA40A GFM 57, TVS 33 TVS SMC tvs SMC MARKING GHR 26A 79mcc
    Text: 53.6 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 , 37 38 34 35 32 33 29 30 27 28 25 26 23 24 21 22 18 19 17 18 15 16 14 14.5 12.5 13 11.5 12 10 11 9.0 , 143 137 165 158 176 168 187 179 198 189 220 210 242 231 275 263 330 315 385 368 440 420 1.0 1.0 1.0


    Original     		PDF DO-41 P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 GFM 64A GDV 64A GFM 85A 625 GFG SA40A GFM 57, TVS 33 TVS SMC tvs SMC MARKING GHR 26A 79mcc

    2003 - mb101

    Abstract: No abstract text available
    Text: DB103 200 40 DB104 400 40 DB105 600 40 DB106 800 40 DB107 1000 40 1.0 HDB101G 50 40 HDB102G 100 40 , 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 10 10 10 10 10 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.0 1.0 1.0 1.3 1.7 1.7 1.7 1.0 1.0


    Original     		PDF MB05M MB10M DB101 DB102 DB103 DB104 DB105 DB106 DB107 HDB101G mb101

    2011 - Not Available

    Abstract: No abstract text available
    Text: -8 RG1676-9 RG1676- 10 RG1676-11 RG1676-12 RG1676-13 RG1676-14 RG1676-15 RG1676-16 RG1676-17 RG1676 , ® RESISTANCE TOLERANCE OHMS % 100 100 10 220 220 100 100 100 220 220 220 220 220 220 220 220 100 220 220 100 10 220 220 220 220 47 47 47 200 100 22 100 50 220 220 220 100 50 50 15 33 15 47 100 220 10 220 100 100 470 220 22 75 47 10 50 100 220 220 220 68 220 50 220 10 820 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10


    Original     		PDF RG1676 RG1676 RG1676-1 RG1676-2 RG1676-3 RG1676-4 RG1676-5 RG1676-6 RG1676-7 RG1676-8

    2000 - SR1K-2

    Abstract: SR1K2 capacitor K460 SR2S14 Z5U Metal Oxide Varistor 155Z sr2k20
    Text: CECC 42 000 203 10 /00 SIOV Metal Oxide Varistors HICAP Maximum ratings (TA = 85 °C) Type , 23/­ 0 + 23/­ 0 + 23/­ 0 Max. clamping voltage v i V A 40 5,0 40 10 ,0 40 5,0 40 5,0 40 10 ,0 40 10 ,0 40 10 ,0 58 58 58 58 58 58 58 5,0 10 ,0 5,0 5,0 5,0 10 ,0 10 ,0 C ± 20% Derating V /I , 275 274 274 274 275 275 ± 10 ± 10 ± 10 ± 10 ± 10 ± 10 ± 10 New ordering codes implemented (refer to chapter Varistor Type Cross-Reference List) 1) at 0,5 V 204 10 /00 SIOV Metal Oxide


    Original     		PDF

    2010 - CL10B105KA8NNN

    Abstract: CL31A106KOHNNN CL05B224KQ5NNN
    Text: 1.25±0.10 2.00±0.15 2.00±0.20 1.25±0.15 1.25±0.20 5 5 8 C F Q 0.2+0.15/-0.1 10 , High Capacitance Table (X5R) Capacitance (uF) Size(mm) Vr(V) 4 6.3 0402(1005) 10 16 25 4 6.3 10 0603(1608) 16 25 50 4 6.3 10 0805(2012) 16 25 50 6.3 10 1206(3216) 16 25 50 6.3 1210(3225) 10 16 25 0.1 0.22 0.47 1 2.2 4.7 10 22 47 , ) 6.3 0402(1005) 0.3 1 2.2 4.7 10 22 33 47 X6S 10 Part Numbering


    Original     		PDF CL31F226ZPHNNN CL31F226ZQHNNN CL32F106ZAHLNN CL32F106ZOELNN CL32F226ZPJNNN CL32F226ZPULNN CL32F476ZQJNNN CL32F107ZQJNNN CL10B105KA8NNN CL31A106KOHNNN CL05B224KQ5NNN

    2005 - SMAJ15CA

    Abstract: SMAJ24CA SMAJ10C SMAJ10CA SMAJ11C SMAJ11CA SMAJ12C SMAJ12CA SMAJ13C
    Text: with a 10 /1000µs waveform * Optimized for LAN protection applications * Low clamping * Very fast , 150 °C Peak Pulse Current on 10 /1000µs waveform (Note 1, Fig. 1) Operating Junction and , . IT (mA) VWM (V) Maximum Reverse Leakage @ VWM IR (µA) SMAJ5.0C 6.40 7.82 10 5.0 1600 41.7 SMAJ5.0CA 6.40 7.25 10 5.0 1600 43.5 9.2 SMAJ6.0C 6.67 8.15 10 6.0 1600 35.1 11.4 SMAJ6.0CA 6.67 7.37 10 6.0 1600


    Original     		PDF 188CA DO-214AC) UL94V-O SMAJ78CA SMAJ85A SMAJ188CA SMAJ15CA SMAJ24CA SMAJ10C SMAJ10CA SMAJ11C SMAJ11CA SMAJ12C SMAJ12CA SMAJ13C

    2005 - SMCJ10C

    Abstract: SMCJ10CA SMCJ11C SMCJ11CA SMCJ12C SMCJ12CA SMCJ13C
    Text: * * * * * 0.305(7.75) 0.030(0.76) * 1500W peak pulse power capability with a 10 /1000µs waveform , unless otherwise specified. Rating Symbol Peak Pulse Power Dissipation on 10 /1000ms waveform Peak Pulse Current on 10 /1000µs waveform (1) (2) (1) Typical thermal resistance , Junction to , (V) Maximum Reverse Leakage @ VWM IR (µA) SMCJ5.0C 6.40 7.82 10 5.0 2000 156.3 SMCJ5.0CA 6.40 7.25 10 5.0 2000 163.0 9.2 SMCJ6.0C 6.67 8.15


    Original     		PDF 188CA DO-214AB) UL94V-O SMCJ10C SMCJ10CA SMCJ11C SMCJ11CA SMCJ12C SMCJ12CA SMCJ13C

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: 50 50 50 50 50 50 50 50 50 Vebo (V) 10 10 10 10 10 10 6 6 10 10 10 10 5 6 5 5 10 6 6 6 6 5 5 5 5 6 6 6 10 10 10 10 5 6 (mA) 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 500 , 250 250 250 250 250 250 200 250 200 250 200 250 200 250 Vce (V) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 1 0 10 1 0 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Ic te (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5


    OCR Scan     		PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    2004 - BCR141

    Abstract: BCR141F BCR141L3 BCR141S BCR141T
    Text: 50 Emitter-base voltage VEBO 10 Input on voltage Vi(on) 30 Collector current , = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0.5 mA Input off , Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz , 10 2 10 3 - 10 2 IC h FE mA 10 1 10 1 10 0 -1 10 10 0 10 1


    Original     		PDF BCR141. BCR141/F/L3 BCR141T/W BCR141S/U EHA07184 EHA07174 BCR141 BCR141F BCR141L3 BCR141S BCR141 BCR141F BCR141L3 BCR141S BCR141T

    1Nu5

    Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
    Text: 75 125 50 55 25 70 23 23 90 100 75 60 75 75 75 100 90 100 100 100 100 100 125 20 25 10 1,0 1.0 1.0 1.0 1.0 5 5 7.5 4 3 50 30 10 100 6 10 10 10 25 3 1.0 1.0 1.5 1.5 1.0 5 25 12.7 12.8 3 5 6 35 1000 3 3 10 iö 1.0 1.0 1.0 1.0 1.0 410 1500 500 800 200 50 50 100 50 20 1.0 1.0 1.0 1.0 1.0 5 2.5 5 25 5 80 1500 150 100 10 20 50 50 50 10 1.0 1.0 1.0 1.0 1.0 5 5 4 5 15 7 800 500 500 300 10 iso 150 150 30 1.0 l.Q 1.0 1.0 1.0 15 3.6 4 5 5 300 300 500 800 600 30 75 75 100


    OCR Scan     		PDF 1N34A 1n38a 1n38b 1n52a 1N55B 1n56a 1n57a 1n58a 1n60a 1n63a 1Nu5 IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128

    SMBJ15A

    Abstract: SMBJ130A SMBJ170A SMBJ17A SMBJ58A SMBJ100A SMBJ64A SMBJ6.5A SMBJ12A SMBJ28A
    Text: Power : 600 W FEATURES : * 600W peak pulse power capability with a 10 /1000µs waveform * Excellent , Peak Pulse Power Dissipation on 10 /1000μs waveform Peak Pulse Current on 10 /1000μs waveform (1 , 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 , 50 10 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 62.5 65.2


    Original     		PDF TH97/2478 TH09/2479 TH07/1033 DO-214AA) UL94V-0 10/1000ms. SMBJ15A SMBJ130A SMBJ170A SMBJ17A SMBJ58A SMBJ100A SMBJ64A SMBJ6.5A SMBJ12A SMBJ28A

    2003 - BAS170W

    Abstract: BAS70 BAS70-02L BAS70-02W BAS70-04S marking 74s Puls BAS70-04 BAS70-04T BAS70-04W
    Text: - 0.1 µA DC Characteristics Breakdown voltage V(BR) I(BR) = 10 µA Reverse current IR VR = 50 V Forward voltage mV VF IF = 1 mA 300 375 410 IF = 10 mA , rf - 34 - - - 100 ps Forward voltage matching1) VF IF = 10 mA AC Characteristics Diode capacitance VR = 0 , f = 1 MHz Forward resistance IF = 10 mA, f = 10 kHz , = f = 10 kHz BAS 70W/BAS 170W 2.0 CT f = 1MHz (VR) EHB00044 pF (IF


    Original     		PDF BAS70. BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04T BAS70-04W BAS70-04S BAS170W BAS70 BAS70-02L BAS70-02W BAS70-04S marking 74s Puls BAS70-04 BAS70-04T BAS70-04W

    2003 - Not Available

    Abstract: No abstract text available
    Text: ) = 10 µA Reverse current IR VR = 50 V Forward voltage mV VF IF = 1 mA 300 375 410 IF = 10 mA 600 705 750 IF = 15 mA 750 880 1000 - - 20 , )  IF = 10 mA VF AC Characteristics Diode capacitance pF VR = 0 , f = 1 MHz Forward resistance IF = 10 mA, f = 10 kHz Charge carrier life time  IF = 25 mA 1 rr VF is the , . / BAS170W Forward resistance rf = f = 10 kHz BAS 70W/BAS 170W 2.0 CT  f = 1MHz (VR


    Original     		PDF BAS70. BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04T BAS70-04W BAS70-04S

    2006 - BGY 602

    Abstract: BD 882 KD 605 447 gev SMCJ10 SMCJ10A SMCJ10CA SMCJ11 SMCJ11A SMCJ12
    Text: capability with a 10 /1000us waveform, repetition rate (duty cycle): 0.01% Very fast response time High temperature soldering guaranteed: 250oC/ 10 seconds at terminals Mechanical Data Case: JEDEC DO-214AB(SMC , unless otherwise specified.) Parameter Symbol Peak pulse current with a 10 /1000us waveform (1) Unit P PPM Peak pulse power dissipation with a 10 /1000us waveform (1) (2) Value Minimum 1500 , . Max. Test current at IT (mA) SMCJ5.0 GDD BD D 6.40 7.82 10 5.0 1000


    Original     		PDF 440CA 10/1000us 250oC/10 DO-214AB MIL-STD-750, SMCJ300A SMCJ350A SMCJ400A SMCJ440A 300us BGY 602 BD 882 KD 605 447 gev SMCJ10 SMCJ10A SMCJ10CA SMCJ11 SMCJ11A SMCJ12

    2012 - CL21B105K

    Abstract: CL05A105K CL05A225 CL21B475K CL32B106K CL21B225K CL32A227MQVNNN CL32A476KOJNNN CL10A476MR8NZN CL32B226KAJ
    Text: Size Code 05 10 EIA Code 0402 0603 L 1.00±0.05 1.60±0.10 1.60±0.10 2.00±0.10 2.00±0.10 2.00±0.10 , . High Capacitance Table (X5R) Capacitance () Size(mm) Vr(V) 4 6.3 0402(1005) 10 16 25 4 6.3 10 0603(1608) 16 25 50 4 6.3 10 0805(2012) 16 25 50 6.3 10 1206(3216) 16 25 50 6.3 1210(3225) 10 16 25 0.1 0.22 0.47 1 2.2 4.7 10 22 15 47 100 220 High Capacitance Table_Low Profile (X5R) Size(mm) Tmax (mm) Capacitance () Vr(V) 6.3 0402(1005) 0.3 10 16 6.3 10 0603(1608) 0.5 16 25 10 0.7 16 25 0805(2012) 4 6.3 0.95


    Original     		PDF

    2003 - BCR191

    Abstract: BCR191F BCR191L3 BCR191S BCR191T BCR191W
    Text: voltage VCBO 50 Emitter-base voltage VEBO 10 Input on voltage Vi(on) 30 , - MHz Ccb - 3 - pF V(BR)CBO IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0,5 mA , Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V


    Original     		PDF BCR191. BCR191/F/L3 BCR191T/W BCR191S EHA07173 EHA07183 BCR191 BCR191F BCR191L3 BCR191 BCR191F BCR191L3 BCR191S BCR191T BCR191W

    WK2 94V0

    Abstract: transistor wu1 94v0 wk2 wk1 sot-23 wk2 sot 23 wu1 sot-23 CHDTA144WUPT wk2 94v-0 marking wu1 marking wk1
    Text: -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 - 10 /-1 -1/-0.1 - 10 /-1 -5/-0.25 -5/-0.5 - 10 /-1 -1/-0.1 - 10 /-1 -5/-0.25 -5/-0.5 -5/-0.25 - 10 /-1 -1/-0.1 - 10 /-1 -0.5/-0.05 -5/-0.25 -5/-0.5 -5/-0.25 - 10 /-1 -1/-0.1 - 10 /-1 -0.5/-0.05 -5/-0.25 -5/-0.5 , 250 250 250 250 250 250 250 250 250 250 250 250 250 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5


    Original     		PDF CHDTA114TMPT CHDTA115TMPT CHDTA124TMPT CHDTA143TMPT CHDTA144TMPT CHDTA114TEPT CHDTA115TEPT CHDTA124TEPT CHDTA143TEPT CHDTA144TEPT WK2 94V0 transistor wu1 94v0 wk2 wk1 sot-23 wk2 sot 23 wu1 sot-23 CHDTA144WUPT wk2 94v-0 marking wu1 marking wk1

    Not Available

    Abstract: No abstract text available
    Text: 17.5 17.5 17.5 17.5 17.5 17 .5 17 .5 17.5 UAX. C O LL. O IS S. in Free A ir ji 2 5 * C Pc (W alls) 1.0 1.0 1.0 1.0 1 .0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 2.0 2.0 2 .0 M X. BVC Eo T E , IfB O Vet 025* C (A M P ) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 h « (M IN . , 1.0 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 IJQ 1.0 1.5 1.5 1.5 1.5 1.5 1.5 15 15 15 15 15 15 15 15 15 , TYPE M AX. C O LL. D IS S . w / in f. Heat Sink (W alls) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10


    OCR Scan     		PDF SP2255 TRSP2505S

    2004 - Transistor WRS

    Abstract: BCR198 BCR198F BCR198L3 BCR198S BCR198T BCR198W WRS SOT363
    Text: Emitter-base voltage VEBO 10 Input on voltage Vi(on) 50 Collector current IC 70 , - 190 - MHz Ccb - 3 - pF V(BR)CBO IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 V, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0,5 mA , Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V


    Original     		PDF BCR198. BCR198/F/L3 BCR198T/W BCR198S EHA07183 EHA07173 BCR198 BCR198F BCR198L3 Transistor WRS BCR198 BCR198F BCR198L3 BCR198S BCR198T BCR198W WRS SOT363

    2004 - Not Available

    Abstract: No abstract text available
    Text: Value 50 50 10 50 70 200 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 , 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on , current VCB = 40 V, IE = 0 nA µA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 V, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0,5 mA Input , Resistor ratio - AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz


    Original     		PDF BCR198. BCR198/F/L3 BCR198T/W BCR198S EHA07183 EHA07173 BCR198 BCR198F BCR198L3

    Not Available

    Abstract: No abstract text available
    Text: ¼H ~ 1.0μH ~ 150,000μH 1,500μH NLI100C NLI102C NLI108C 3.3μH ~ 10 ,000μH ~ 4.7μH ~ 15,000Î , Isat NLI87C 2.2μH ~ 1,500μH NLI123C 10μH ~ 10 ,000μH - 10 % Inductance Tolerance J (±5%), K (± 10 %), M (±20%) DIMENSIONS (mm) Series A max. S (Bulk) S (Tape & Box) D max. E ± 0.05 NLI46C 8.0 2.0 ± 0.5 5.0 ± 1.0 * 5.5 0.55 NLI68C 11.0 2.5 ± 0.5 5.0 ± 1.0 * 7.5 0.65 NLI77C 9.5 5.0 ± 1.0 n/a 8.5 0.65 NLI87C


    Original     		PDF 14X16mm) NLI46C NLI81C NLI68C NLI77C NLI100C NLI102C NLI108C
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