TETRODE TRANSISTOR Search Results

12DV8

Abstract: transistor af 126 ET-T1458 tetrode transistor Scans-0017277 general electric
Contextual Info: 12DV8 12DV8 ET-T1458 P age 1 DUPLEX-DIODE TETRODE 5-57 FOR DETECTOR AND A F DRIVER APPLICATIONS IN AUTOMOBILE RECEIVERS TUBES ^DESCRIPTION AND RATING= The 12DV8 is a miniature duplex-diode, space-charge-grid tetrode intended for use as a combined detector, AVC rectifier, and transistor driver. The tetrode

3N141

Abstract: tetrode
Contextual Info: 3N141 N-Channel; Dual-Gate Tetrode MOSFET 5.63 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N141 Online Store 3N141 Diodes N-Channel; Dual -Gate Tetrode MOSFET Transistors Integrated Circuits checkout.* Optoelectronics

3N200 MOSFET

Abstract: 3N200
Contextual Info: 3N200 N-Channel; Dual-Gate Tetrode MOSFET 5.63 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N200 Online Store 3N200 Diodes N-Channel; Dual -Gate Tetrode MOSFET Transistors Integrated Circuits checkout.* Optoelectronics

3n159

Abstract: dual-gate
Contextual Info: 3N159 N-Channel; Dual-Gate Tetrode MOSFET 6.38 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N159 Online Store 3N159 Diodes N-Channel; Dual-Gate Tetrode MOSFET Transistors Enter code INTER3 at checkout.* Integrated Circuits

12ds7

Abstract: 12ds7 tube Scans-0017276 general electric
Contextual Info: 12DS7 12DS7 ET-T1551 Page 1 DUPLEX-DIODE TETRODE TUBES 9-59 FOR DETECTOR AND AF DRIVER APPLICATIONS IN AUTOMOBILE RECEIVERS DESCRIPTION A N D RATINGS T h e 12DS7 is a m iniature duplex-diode, space-charge-grid tetrode intended for use as a com bined detector, A V C rectifier, an d transistor driver. T h e tube

"Frequency Tripler"

Abstract: 40647 Tripler noval socket philips 9 pin Frequency tripler
Contextual Info: PHILIPS QQC03/14 QUICK HEATING DOUBLE TETRODE for use as output tube, frequency multiplier or modulator. The tube has been designed for intermittent filament service in transistorized mobile equipment FILAMENT: oxide coated HEATING: direct; parallel supply

BF998

Abstract: application BF998 bf998w 3G1 transistor
Contextual Info: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration

bf998

Abstract: application BF998 TRANSISTOR mosfet BF998
Contextual Info: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration

bf998

Abstract: bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R
Contextual Info: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration

bf998

Abstract: application BF998 TRANSISTOR mosfet BF998 bf-998 bf998 mosfet tetrode application note
Contextual Info: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration

BF998

Contextual Info: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration

TRANSISTOR mosfet BF998

Contextual Info: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration

BF998W

Abstract: 998 transistor bf998 102001 transistor BF 998
Contextual Info: BF998W Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor 4 with high S/C quality factor
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BF998R

Abstract: 998 transistor transistor BF 998
Contextual Info: BF998R Silicon N-Channel MOSFET Tetrode
Short-channel transistor with high S/C quality factor
For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration

SOT-343

Abstract: G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note
Contextual Info: BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF998

Abstract: G1 TRANSISTOR Marking G2 mosfet tetrode TRANSISTOR mosfet BF998 BF998 marking code BF marking code BF transistor datasheet transistor marking G1 electrostatic discharge
Contextual Info: BF 998R Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF998W

Abstract: SOT 343 MARKING BF BF998
Contextual Info: BF998W Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor 4 with high S/C quality factor
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BF998

Abstract: bf998 mosfet tetrode application note TRANSISTOR mosfet BF998 p 1S marking SOT143 VPS05178 application BF998
Contextual Info: BF998 3 Silicon N-Channel MOSFET Tetrode 4 • Short-channel transistor with high S/C quality factor 2 • For low-noise, gain-controlled input stages up to 1 GHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF998

Contextual Info: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!

bf998

Abstract: bf998 mosfet tetrode application note VPS05178
Contextual Info: BF998 Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor with high S/C quality factor 4
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

Contextual Info: SIEMENS BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking BF 2000W NDs Ordering Code Pin Configuration Q62702-F1772

Contextual Info: • 7110öEb D0bfi7QS m s ■PHIN BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S0T143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

k d 998 0

Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
Contextual Info: BF 998 Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor with high S/C quality factor 4
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

S887T

Abstract: 1s887
Contextual Info: S 887 T TELEFUNKEN Semiconductors N-channel dual gate MOS-fieldeffect tetrode. Depletion mode. Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF TV-tuners. Features D Integrated gate protection diodes