TETRODE TRANSISTOR Search Results

12DV8

Abstract: transistor af 126 ET-T1458 tetrode transistor Scans-0017277 general electric
Contextual Info: 12DV8 12DV8 ET-T1458 P age 1 DUPLEX-DIODE TETRODE 5-57 FOR DETECTOR AND A F DRIVER APPLICATIONS IN AUTOMOBILE RECEIVERS TUBES ^DESCRIPTION AND RATING= The 12DV8 is a miniature duplex-diode, space-charge-grid tetrode intended for use as a combined detector, AVC rectifier, and transistor driver. The tetrode

12ds7

Abstract: 12ds7 tube Scans-0017276 general electric
Contextual Info: 12DS7 12DS7 ET-T1551 Page 1 DUPLEX-DIODE TETRODE TUBES 9-59 FOR DETECTOR AND AF DRIVER APPLICATIONS IN AUTOMOBILE RECEIVERS DESCRIPTION A N D RATINGS T h e 12DS7 is a m iniature duplex-diode, space-charge-grid tetrode intended for use as a com bined detector, A V C rectifier, an d transistor driver. T h e tube

bf998

Abstract: bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R
Contextual Info: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration

TRANSISTOR mosfet BF998

Abstract: BF998 SIEMENS BF998 marking code
Contextual Info: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Shorl-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!

SOT-343

Abstract: G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note
Contextual Info: BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF998

Abstract: G1 TRANSISTOR Marking G2 mosfet tetrode TRANSISTOR mosfet BF998 BF998 marking code BF marking code BF transistor datasheet transistor marking G1 electrostatic discharge
Contextual Info: BF 998R Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF998W

Abstract: SOT 343 MARKING BF BF998
Contextual Info: BF998W Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor 4 with high S/C quality factor
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

bf998

Abstract: bf998 mosfet tetrode application note VPS05178
Contextual Info: BF998 Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor with high S/C quality factor 4
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

S887T

Abstract: 1s887
Contextual Info: S 887 T TELEFUNKEN Semiconductors N-channel dual gate MOS-fieldeffect tetrode. Depletion mode. Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF TV-tuners. Features D Integrated gate protection diodes

marking code g1s

Abstract: Q62702-F1129 D 998 TRANSISTOR
Contextual Info: Silicon N Channel MOSFET Tetrode BF 998 Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO

d 998 transistor circuit

Contextual Info: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998

S797

Contextual Info: S 797 T TELEFUNKEN Semiconductors N-channel dual gate MOS-fieldeffect tetrode. Depletion mode. Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages in UHF- and VHF-tuner. Features D D D D Integrated gate protection diodes

3N35

Contextual Info: TYPE 3N35 N-P-N GROWN JUNCTION SILICON TETRODE TRANSISTOR B U LL ET IN NO. DL-S 58961, A UG U ST 1958 Typical 20db Power Gain at 70 MC Hgh Cain at High Temperature Designed for High Frequency • IF Amplifiers RF Amplifiers * Video Amplifier! • Ofcillators

Contextual Info: SIEM ENS BF 988 Silicon N Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code BF 988 - Q62702-F36 Pin Configuration 2 4 1 3 S D Û2 Package1

telefunken ta 400

Abstract: transistor marking 4934
Contextual Info: S 787 T TELEFUNKEN Semiconductors N-channel dual gate MOS-fieldeffect tetrode. Depletion mode. Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner. Features D D D D Integrated gate protection diodes

marking code g1s

Abstract: Q62702-F1771 VPS05178 marking G2s
Contextual Info: BF 2000 Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor with high S/C quality factor 4 • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code Pin Configuration BF 2000 NDs 1=S Q62702-F1771

a31s

Abstract: Silicon N Channel MOSFET Tetrode
Contextual Info: SIEMENS BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code Package II 5 CO h 1= D CO Q62702-F1772 CM BF 2000W NDs

SK3065

Contextual Info: SK3065 Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V)6.0 I(D) Max. (A)50m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)330m Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Amb.

Contextual Info: • APX bbSBTBl QD2M73D bT4 N AMER PHILIPS/DISCRETE BF989 b7E D J K. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This M O S-FET tetrode is intended for use in u.h.f. applications in television

Contextual Info: BF998R Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)12 V(BR)GSS (V)20 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.500

3sk101Y

Contextual Info: 3SK101Y Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V)9.0 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Amb.

Contextual Info: 40601 Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V)8.0 I(D) Max. (A)50m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)400m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175’ Thermal Resistance Junc-Amb.

3SK101

Contextual Info: 3SK101 Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V)9.0 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Amb.

Contextual Info: BF996S Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.480