TD 161 Search Results

TD050 transformer

Contextual Info: DOT LOCATES TERM. #1 .610 ±.015 I [15.49 ±.38] P ” I .485 REF. I - | [12.32] p 1CT:1.4CT 1.135 MAX. [28.83] 21 20 TD+ - CTD - UUUU TD- @ - RD+ 0- RD- § - TD+ (? ) TD- (S ) TX+ -63) /r m CTX TX- 1:1 U uJ RX+ jmri RX- 3Î 1CT:1.4CT .088 REF. [2.24]

Contextual Info: 2,54mm .100" J TS, TD , H TS SERIES PRECISION MACHINED TERMINAL STRIPS S P E C IF IC A T IO N S For complete specifications see www.samtec.com?TS or www.samtec.com?TD TS,TD T O Insulator Material: Mates w ith: SS, SD, HSS, SL, SDL, ESS, ESD Note: Some lengths,

tda3591

Abstract: TDA3561 tda3562a TDA3591A TDA3561A TDA3560 TDA3590 TDA3590A BC548 TDA3566
Contextual Info: TD A 3590A J V _ SECAM PROCESSOR CIRCUIT GENERAL DESCRIPTION T h eT D A 3 5 90 A processor circu it converts SECAM signals into sequential phase-modulated quasi-PAL signals. It combines all the functions o f the TD A 3590, TDA3591 and TD A 3591A to provide a complete

Contextual Info: F -2 1 1 -1 2 ,5 4 m m .1 0 0 " g TS, TD , H TS SERIES PRECISION MACHINED TERMINAL STRIPS S P E C IF IC A T IO N S For complete specifications see www.samtec.com?TS or www.samtec.com?TD TS,TD T O Insulator Material: Mates w ith: SS, SD, HSS, SL, SDL, ESS, ESD

SM-1000-003

Abstract: MIL-DTL-12883 TD-1609 TD-1610 SM 96 Leach Relay
Contextual Info: SM-1000-003 ENGINEERING DATA SHEET TRACK MOUNT RELAY SOCKET 5 AMP BASIC SOCKET SERIES DESIGNATION FOR: Series X Track Mount Series TD-1609, TD-1610 (Track Mount) QUALIFIED TO: MIL-DTL-12883/52-001 APPLICABLE TRACK: MT-3000-03 GENERAL CHARACTERISTICS 1. Supplied with No. 20 contacts and No. 20 crimp.

314P

Abstract: EIA-541 IRFL014 TO-261AA Package
Contextual Info: IRLL014PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

AN-994

Abstract: IRL1004
Contextual Info: IRL1004S/LPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

QBS001

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. ELECTRICAL CHARACTERISTICS @25*C TURNS RATID Tx 1-2-3 Rx (6 -7 -8 ) 16 TD 1 j 11 TD 6

D1488

Contextual Info: □ IXYS Advanced Technical Information HiPerFET IXFH/IXFK/IXFT80N10 Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr Test C onditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i v DGR V GS V GSM ^D25 ^DM 100 100

Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 1000 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 1000 V V GS Continuous ±20 V V GSM Transient

TSOT1610GP-YB21

Abstract: MARS10G el12n 1724-pin STM-64 AU-AIS TSOT1610G 1724P 0AA00 mars10g T-PRO AW23
Contextual Info: Hardware Design Guide April 2005 MARS10G T-Pro and MARS10G TD-Pro TSOT1610GP/GPD SONET/SDH STS-192/STM-64 Overhead Terminator and Path Processor Overview The MARS10G T-Pro and MARS10G TD-Pro are STS-192/STM-64 overhead generators/terminators and path processors, members of the MARS family

TDA 3035

Abstract: tda 8890 tda+8853+diagram
Contextual Info: ADAM TECH BARRIER TERMINAL STRIPS SINGLE/ DUAL / CLOSED SIDE/STACKED ADAM TECHNOLOGIES INC. TB/TD SERIES INTRODUCTION: Adam Tech TB and TD Series Terminal Blocks are among the most widely used and convenient devices for terminating wires. They are extremely versatile and have a very low applied cost. Their use

TDA 2028

Abstract: TDA 1513 TDA 5660 P TDA+2028 TDA 2216 tda 8890 tda 2850 TDA 3035 tda 2750 la 7630
Contextual Info: BARRIER TERMINAL STRIPS ADAM TECH SINGLE/DUAL/CLOSED SIDE/STACKED ADAM TECHNOLOGIES INC. TB /TD SERIES INTRODUCTION: Adam Tech TB and TD Series Terminal Blocks are among the most widely used and convenient devices for terminating wires. They are extremely versatile and have a very low applied cost. Their use

D2527

Abstract: D1488
Contextual Info: n ix Y S HiPerFET Power MOSFETs Advanced Technical Information IXFH/IXFK/IXFT52N30 = ^D25 D DS on N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr Single Die Test C onditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i V GS V GSM

6A1103

Contextual Info: SOLDER SUFFIX CUSTOMER TERMINAL RoHS LEAD Pb -FREE LF1 S n96X, Ag4X Y«s No DOT LOCATES TERM. #1 .610 ±.015 I [15.49 ±.38] P ” I .485 REF. I - | [12.32] p 1CT:1.4CT TD+ - CTD - TX+ UUUU CTX /r m TD- © - RD+ 0 - TX- 1:1 1.135 MAX. [28.83] RD- (D -

Contextual Info: □ IXYS Preliminary Data Sheet VCES IXGA12N60B IXGP12N60B HiPerFAST IGBT ^C25 600 V 24 A “ VCE sat typ Maximum Ratings Symbol TestConditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£2 600 V TO-263 AA (IXGA) v Continuous

Contextual Info: □ IXYS Advanced Technical Information IXGH 31N60D1 IXGT 31N60D1 Ultra-LowVCE sat IGBT with Diode V CES = 600 V = 60 A = 1.7 V ^C25 V CE(sat) Combi Pack Symbol Test Conditions Maximum Ratings V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

Contextual Info: □IXYS Advanced Technical Information Ultra-LowVCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B V CES = 600 V = 40 A = 2.0 V ^C25 V CE(sat) Combi Pack Symbol TestConditions v CES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V VGES

Contextual Info: H Î Y Y S Advanced Technical Information HiPerFET Power MOSFETs IXFH 26N50Q IXFT 26N50Q Q Class Symbol Test C onditions Maximum Ratings v DSS Td = 25°C to 150°C 500 V v DGR Td = 25°C to 150°C; RGS = 1 MQ 500 V VGS V GSM Continuous +20 V Transient +30

Contextual Info: □ IXYS H H ifl JL æ* X HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 V CES C25 V CE sat = 600 V = 48 A = 2.5 V Preliminary data sheet Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

Contextual Info: □ IXYS Preliminary data HiPerFAST IGBT IXGN 50N60B V CES I C25 V CE sat = 600 V = 75 A = 2.5 V « Maximum Ratings Symbol Test Conditions VCES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V VGES Continuous ±20 V VGEM Transient

L-1047

Contextual Info: □ IXYS HiPerFAST IGBT IXGH30N60B IXGT30N60B VC ES ^C25 V CE sat = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Maximum Ratings Test Conditions vv C E S Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V G ES Continuous

Contextual Info: □ IXYS Advanced Technical Information IXGH 20N100 IXGT 20N100 IGBT Symbol Test Conditions v CES Td = 25°C to 150°C 1000 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 1000 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 40 A ^C90 Tc = 90°C

Contextual Info: □IXYS Advanced Technical Information IXSH IXST High Speed IGBT 40N60B 40N60B Short Circuit SOA Capability VCES = 600 V IC25 = 75 A V CE sat = 2.2 V t Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V v GES