Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXGP12N60B Search Results

    IXGP12N60B Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXGP12N60B
    IXYS 600V HiPerFAST IGBT Original PDF 71KB 2
    SF Impression Pixel

    IXGP12N60B Price and Stock

    IXYS Corporation

    IXYS Corporation IXGP12N60BD1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IXGP12N60BD1 18
    • 1 $25.16
    • 10 $25.16
    • 100 $23.90
    • 1000 $23.90
    • 10000 $23.90
    Buy Now

    IXGP12N60B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: n i x Y S Preliminary Data Sheet IXGA12N60B IXGP12N60B HiPerFAST IGBT VCES 600 V 24 A 2.1 V 55 ns ^C25 V CE sat typ t Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V vCGR ^ = 25°C to 150°C; RGE = 1 Mi2 600 V Maximum Ratings VGES Continuous ±20


    OCR Scan
    ixga12n60bixgp12n60b PDF

    Contextual Info: □ IXYS Preliminary Data Sheet VCES IXGA12N60B IXGP12N60B HiPerFAST IGBT ^C25 600 V 24 A “ VCE sat typ Maximum Ratings Symbol TestConditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£2 600 V TO-263 AA (IXGA) v Continuous


    OCR Scan
    ixga12n60bixgp12n60bo-263 PDF

    IXGD32N60B-5X

    Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B
    Contextual Info: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43


    Original
    ixgd28n30-43ixgd40n30-5xixgd12n60b-3xixgd31n60-4x+11ixgd41n60-5xixgd60n60-7yixgd200n60b-9xixgd2n100-1mixgd4n100-1tixgd8n100-2lixgd32n60b-5xixgh45n120ixgh24n60bixgh50n60bixgh32n60b PDF

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Contextual Info: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original
    ixfd50n20ixgd32n60bixfd75n10ixtd5n100+6ixth40n2591x0ixgh25n120aixtd5n100-5tixgd32n60b-5xixgd8n100-2l PDF

    IXGH24N50B

    Abstract: IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100
    Contextual Info: nixYS Insulated Gate Bipolar Transistors IGBT-Chips v Type •• c «V- Chip typ - tn » Chip s o b dbnemtons Source bm d wire »C Tj„ = l&O'C TO Equivalent device datasheet Dim. out­ line V V A pF IXGD28N30-43 IXGD40N30-5X 300 2.1 1.5 20 20 1500 2500


    OCR Scan
    ixgd28n30-43ixgd40n30-5xixgd12n60b-33ixgd31n60-4x+13ixgd41n60-5xixgd60n60-7xixgd200n60-9xixgd8n100-2lixgd12n100-33ixgd17n100-4tixgh24n50bixgh50n60bixgh32n60bixgh50n60aixgh24n60a equivalentixgh24n60aixgh17n100 PDF

    Ixgr50n60

    Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C
    Contextual Info: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces *C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J* ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)


    OCR Scan
    o-263plus247tmo-247ixgh28n60b+16ixgh31n60o-268aao-204lsoplus247tmot-227bixga20n120ixgr50n60ixgn60n60ixgx120n60bisoplus247tmixgr40n60ixgh60n60ixgh32n170ixgh35n120ixga20n60bixgp12n60c PDF