TANAKA WIRE 15 MILS Search Results

tanaka gold wire

Abstract: tanaka wire tanaka bonding wire tanaka GPG wire tanaka wire 15 mils tanaka EN-4088Z SN74LS244 SN74LS244DW
Contextual Info: TEXAS INSTRUMENTS Qualification Notification of the Change from 0.95 mil Conventional Gold Bonding Wire to 0.80 mil Tanaka GPG Gold Alloy Bonding Wire for SLL Product June 23, 1997 Abstract Texas Instruments Standard Linear and Logic Products SLL has qualified the 0.80 mil Tanaka GPG

tanaka wire

Abstract: MAC-3070 shinetsu tanaka au wire EME-6730UC Ablestik KMC-184 g991 EME-6730 tanaka wire 10 mils
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN DATE: November 18, 1999 MEANS OF DISTINGUISHING CHANGED DEVICES: PCN #: G9911-05 Product Affected: All Platic packages Product Mark Back Mark Manufacturing Location Affected: ALL

ph44

Abstract: Tanaka GL2 tanaka wire Ablebond 8340 tanaka au wire tanaka epoxy Compound c7025 Ablebond tanaka C7025
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN DATE: November 18, 1999 MEANS OF DISTINGUISHING CHANGED DEVICES: PCN #: G9911-04 Product Affected: All Plastic packages Product Mark Back Mark

Contextual Info: 2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler X1002 December 2005 - Rev 08-Dec-05 Features Chip Device Layout Compact, Low-Cost Design Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply 100% On-Wafer RF, DC and Output Power Testing

tanaka TS3332LD epoxy

Abstract: XP1073-BD P1073-BD ka-band bare
Contextual Info: 33-37 GHz GaAs MMIC Power Amplifier P1073-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 6.5 W Power Amplifier 22 dB Small Signal Gain 37 - 38 dBm Pulsed Saturated Output Power Up to 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

XP1072-BD

Abstract: ka-band bare xp1072-bd-000v P1072-BD XP1072
Contextual Info: 33-37 GHz GaAs MMIC Power Amplifier P1072-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 4 W Power Amplifier 22 dB Small Signal Gain 35 - 36 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

P1014

Abstract: DM6030HK TS3332LD XP1006 XP1014 XP1014-BD-000V XP1006 bonding
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD August 2007 - Rev 03-Aug-07 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

DM6030HK

Abstract: TS3332LD XX1002 XX1002-BD-000V XX1002-BD-EV1 tanaka epoxy
Contextual Info: 2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler X1002-BD July 2007 - Rev 27-Jul-07 Features Compact, Low-Cost Design Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply 100% On-Wafer RF, DC and Output Power Testing

ts333

Abstract: tanaka gold wire current tanaka gold wire DM6030HK 8SDV0500 TS3332LD XE1000-BD XE1000-BD-000V XE1000-BD-EV1 DM6030HK-Pt
Contextual Info: 2.0-16.0 GHz GaAs MMIC Frequency Divider April 2007 - Rev 17-Apr-07 E1000-BD Features Divide-by-Four +5.0 dBm Output Power -30 dBc Fundamental Leakage Single-ended or Differential Input & Output 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

M1004-BD

Abstract: 26BAM0545 DM6030HK TS3332LD XM1004-BD XM1004-BD-000V XM1004-BD-EV1
Contextual Info: 20.0-38.0 GHz GaAs MMIC Balanced Mixer February 2007 - Rev 26-Feb-07 M1004-BD Features Fundamental Balanced Mixer 8.0 dB Conversion Loss +25.0 dBm Input Third Order Intercept IIP3 35.0 dB LO to RF Isolation 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883

DM6030HK

Abstract: TS3332LD XX1002 XX1002-BD XX1002-BD-000V XX1002-BD-EV1
Contextual Info: 2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler X1002-BD July 2008 - Rev 30-Jul-08 Features Compact, Low-Cost Design Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply 100% On-Wafer RF, DC and Output Power Testing

xp1014

Abstract: P1014-BD
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD November 2008 - Rev 14-Nov-08 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

180 Degree hybrid

Abstract: 180 Degree broadband hybrid 26BAM0545 DM6030HK M1004-BD TS3332LD XM1004-BD XM1004-BD-000V XM1004-BD-EV1
Contextual Info: 20.0-38.0 GHz GaAs MMIC Balanced Mixer February 2007 - Rev 26-Feb-07 M1004-BD Features Fundamental Balanced Mixer 8.0 dB Conversion Loss +25.0 dBm Input Third Order Intercept IIP3 35.0 dB LO to RF Isolation 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883

MAAP-015036

Contextual Info: MAAP-015036 Power Amplifier, 15 W 8.5 - 10.5 GHz Rev. V1 Features Functional Schematic •       15 W Power Amplifier 42 dBm Saturated Pulsed Output Power 17 dB Large Signal Gain PSAT >40% Power Added Efficiency Dual Sided Bias Architecture

p1014

Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit

Q1005-BD

Abstract: 14OSC0501 DM6030HK TS3332LD XQ1005-BD XQ1005-BD-000V XQ1005-BD-EV1
Contextual Info: 14.2-15.2 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1005-BD On-Chip Prescaler +6.0 dBm Output Power -88 dBc/Hz @ 100KHz Phase Noise -40 dBc Harmonic Suppression 110mA @ 4.0V Bias Supply 100% On-Wafer, DC and Output Power Testing

S1000-BD

Abstract: DM6030HK TS3332LD XS1000 XS1000-BD-000V XS1000-BD-EV1 Mimix phase shifter
Contextual Info: 7.0-13.0 GHz GaAs MMIC 6-Bit Phase Shifter S1000-BD August 2007 - Rev 21-Aug-07 Features 6 Bit Phase Shifter Digital Control 0 – 3.3 V LSB = 5.625 ° 25 dBm P1dB Input Compression 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883

Q1005-BD

Abstract: vco mimix
Contextual Info: 14.2-15.2 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1005-BD On-Chip Prescaler +6.0 dBm Output Power -88 dBc/Hz @ 100KHz Phase Noise -40 dBc Harmonic Suppression 110mA @ 4.0V Bias Supply 100% On-Wafer, DC and Output Power Testing

PB-CMM1100-BD-0000

Abstract: tanaka epoxy tanaka TS3332LD epoxy transistor BD 140 CMM1100-BD CMM1100-BD-000V DM6030HK TS3332LD
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD September 2008 - Rev 28-Sep-08 Features Self Bias Architecture 16.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010

XA1000-BD-EV1

Abstract: DM6030HK TS3332LD XA1000 XA1000-BD-000V xa1000-bd A1000-BD
Contextual Info: DC-18.0 GHz GaAs MMIC 5-Bit Digital Attenuator A1000-BD August 2007 - Rev 21-Aug-07 Features 5-Bit Attenuator 27.9 dB Attenuation Range 24 dBm P1dB Input Compression 0.9 dB LSB Digital Control 0.0 to 3.3 V 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883

PB-CMM1100-BD-0000

Abstract: TS3332LD CMM1100-BD CMM1100-BD-000V DM6030HK
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD April 2007 - Rev 30-Apr-07 Features Self Bias Architecture 16.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout

tanaka TS3332LD epoxy

Abstract: tanaka gold wire tanaka gold wire data sheet tanaka wire tanaka epoxy tanaka TS3332LD tanaka wire 1.4 CMM0016-BD CMM0016-BD-000V DM6030HK
Contextual Info: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0016-BD March 2008 - Rev 04-Mar-08 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture Positive Gain Slope 10.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +39.0 dBm Third Order Intercept

CMM0016-BD

Abstract: CMM0016 CMM0016-BD-000V DM6030HK PB-CMM0016-BD-0000 TS3332LD
Contextual Info: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0016-BD March 2008 - Rev 04-Mar-08 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture Positive Gain Slope 10.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +39.0 dBm Third Order Intercept

Mimix A1000

Contextual Info: DC-18.0 GHz GaAs MMIC 5-Bit Digital Attenuator A1000 April 2006 - Rev 24-Apr-06 Features 5-Bit Attenuator 27.9 dB Attenuation Range 24 dBm P1dB Input Compression 0.9 dB LSB Digital Control 0.0 to 3.3 V 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883