TAA 840 Search Results

256K x 8 SRAM CY7C128A SRAM

Abstract: 5962-86705 PLD28 5962-89935 pld20ra10 5962-89598 CY7C132 cy7c291 PLD20RA PLDC20G10
Contextual Info: Military Product Selector Guide Static RAMs Size Organization Pins DIP SMD Number Part Number Speed (ns) ICC/ISB/ICCDR (mA @ ns) 883 Availability 1K 256 x 4 22 CY7C122 5962-88594 tAA = 25, 35 90 @ 25 Now 4K 1K x 4—Separate I/O 24S CY7C150 5962-88588 tAA = 25

Contextual Info: CY101E484 CY10E484 CY100E484 .1 ^ CYPRESS SEMICONDUCTOR Features • 4096 x 4-bit organization • Ultra high speed/standard power — tAA = 4 ,5 ns — I e e ~ 320 mA • Low-power version — tAA = 7,10 ns — Iee = 200 mA • Both 10KH/10K- and 100K-compatible I/O versions

Contextual Info: ^ CY10E422 CY100E422 » ss f^YPPP’^c; • 256 x 4-bit organization • Ultra high speed/standard power — tAA = 3.5 ns — U : e = 220 niA • Low-power version — tAA = 5 ns — I e e " 150 inA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version

Contextual Info: SY10L474-5/7 SY100L474-5/7 SY101L474-5/7 LOW-POWER 1K x 4 ECLRAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 5/7ns max. ■ Chip select access time, tAc: 3ns max. ■ Write pulse width, tww: 5ns min. ■ Write recovery times under 5ns

Contextual Info: * SY10494-5 SY10494-6 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 5/6ns max. Chip select access time, tAc: 3ns max. Edge rate, tr/tf: 500ps typ. Eliminates write recovery glitch found on

Contextual Info: * SY10484-3.5/4/5/6 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3.5/4/5/6ns max. Chip select access time, tAC: 3ns max. Edge rate tr/tf : 500ps (typ.) Eliminates write recovery glitch found on

Contextual Info: SYNERGY * SEMI CONDUCTOR SYNERGY SEMICONDUCTOR S7E D • «ìGOiafil b3T ■ SY10L494-7/8/10 SY100L494-7/8/10 SY 101L494-7/8/10 LOW POWER 16K x 4 ECL RAM FEATURES OGQOOaa DESCRIPTION ■ Address access time, tAA: 7/8/1 Ons max. ■ Chip select access time, tAc: 3/4/5ns max.

Contextual Info: * SY10L494-10 SY100L494-10 SY101L494-10 LOW-POWER 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 10ns max. Chip s e le c t a c c e s s tim e , tAc: 3ns m ax. Write recovery times under 5ns

sy-10

Abstract: SY100474
Contextual Info: SY10/100/101474-3 SY10/100/101474-4 SY10/100/101474-5 SY10474-3/4/5/7 SY10/100/101474-7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.

Contextual Info: * SY10422-2.5/3/4/5/7 SY100422-2.5/3/4/5/7 SY101422-2.5/3/4/5/7 255 x 4 ECL RAM SYNERGY S E M IC O N D U C TO R DESCRIPTION FEATURES • Address access time, tAA: 2.5/3/4/5/7ns max. ■ Block select access time, tAB: 2ns max. ■ Write pulse width, tww: 3ns min.

SY101422

Contextual Info: SY10422-3/4/5/7 SY100422-3/4/5/7 SY10422-3/4/5/7 SY101422-3/4/5/7 SY100422-3/4/5/7 SY101422-3/4/5/7 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.

SA WA

Abstract: SY101474-4 SY100474 1024-words-by-4-bits
Contextual Info: SY10/100/101474-3 SY10/100/101474-4 SY10/100/101474-5 SY10474-3/4/5/7 SY10/100/101474-7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.

SY101422

Contextual Info: SY10422-3/4/5/7 SY100422-3/4/5/7 SY10422-3/4/5/7 SY101422-3/4/5/7 SY100422-3/4/5/7 SY101422-3/4/5/7 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.

Contextual Info: LOW POWER * ovlnm îû î’ï ü n -1c i / „ a c m DAn/i 16K x 4 E C L R A M S t N E n G a SEMICONDUCTOR S Y100L494-7/8/10 SY101L494-7/8/10 DESCRIPTION FEATURES • Address access time, tAA: 7/8/1 Ons max. ■ Chip select access time, tAc: 3/4/5ns max.

Contextual Info: * SYNERGY 256 X 4 ECL RAM SY10422-4 SEMICONDUCTOR Fe a t u r e s • ■ Address access time, tAA :3ns max. d e s c r ip t io n The Synergy SY10422 is a 1024-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10422 is organized as 256words-by-4 bits, meets the standard 10K family signal and

cea 141

Abstract: A5A 103 A5A 101 D4047
Contextual Info: 6 4 -b it C a c h e M o d u le A S 7 M 6 4 P Series Features Logic Block Diagram ♦ Pentium -ready 64-bit data path A 3A -A 6A • ♦ High speed: tAA= 10-20 ns ♦ Low Power - AO-3 A 07 -1 9 • A3B-A6B — » 4 0 -3 A 07-19 — * A4-16 A 4-16 CËÂ •

Contextual Info: « S Y 1 0422-3/4/5/7 SY1 00422-3/4/5/7 S Y 101422-3/4/5/7 S Y101 M 422-5/7 256 x 4 ECL RAM SYNERGY S E M IC O N D U C T O R F E A TU R E S D E S C R IP TIO N Address access time, 3/4/5/7ns max. tAA: Block select access time, tAB: 2ns max. Write pulse width, tww: 3ns min.

Contextual Info: * S a N E n G Y LOW PO W ER . . ~ , r,»«« 1K X 4 E C L R A M S Y 1 0 L 4 7 4 - 4 /5 /7 S Y 1 0 0 L 4 7 4 - 4 /5 /7 S Y 1 0 1 L 4 7 4 - 4 '5 /7 SEMICONDUCTOR DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Address access time, tAA: 4/5/7ns max.

Contextual Info: SY10422-2.5/3/4/5/7 SY100422-2.5/3/4/5/7 SY101422-2.5/3/4/5/7 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 2.5/3/4/5/7ns max. T h e S yn e rg y S Y 1 0 /1 0 0 /1 0 1 4 2 2 are 1 0 24-b it R andom A ccess M e m orie s R A M s , d e s ig n e d w ith ad va n ce d E m itter

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB56SW3272ESNK-6A/7A 256MB Unbuffered EDO DRAM DIMM 32M-word x 72-bit, 4k Refresh, 2 Bank Module 36 pieces of 16M × 4 components ADE-203-840 (Z) Preliminary Rev. 0.0 Oct. 29, 1997 Description The HB56SW3272ESNK is a 32M × 72 dynamic RAM module, mounted 36 pieces of 64-Mbit DRAM

HM5165405

Abstract: Hitachi DSA00196 Nippon capacitors
Contextual Info: HB56SW3272ESNK-6A/7A 256MB Unbuffered EDO DRAM DIMM 32M-word x 72-bit, 4k Refresh, 2 Bank Module 36 pcs of 16M × 4 components ADE-203-840 (Z) Preliminary Rev. 0.0 Oct. 29, 1997 Description The HB56SW3272ESNK is a 32M × 72 dynamic RAM module, mounted 36 pieces of 64-Mbit DRAM

74std

Abstract: aval PKW 1000 bytek TAA 521 versatest 2100 elan digital systems cmos 4000 series FM27040
Contextual Info: Fairchild Semiconductor Salt Lake 3333 West 9000 South West Jordan, UT 84088-8838 Fax: 1.801.562.7500 Qualification and Characterization of the FM27C040 Product: 4 Mbit UV EPROM Organization: Technology: 512K x 8 CMOS Process: Die Size: Passivation: TS55 145.1 X 201.9 mils

m 9835

Abstract: trasistor bytek bytek Programmers 11801 aval PKW 1000 aval pkw 3000 TAA 521 TAA 521 A fairchild reliability report transistor
Contextual Info: Fairchild Semiconductor Salt Lake 3333 West 9000 South West Jordan, UT 84088-8838 Fax: 1.801.562.7500 Qualification and Characterization of the FM27C010 Product: 1 Mbit UV EPROM Organization: Technology: 128k x 8 CMOS Process: Die Size: Passivation: TS55 91.2 x 136.2 mils

424210

Abstract: PD424210 424210-70 PD424 uPD424210
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD424210 4 M-BIT DYNAMIC RAM 256K-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The µPD424210 is a 262,144 words by 16 bits CMOS dynamic RAM with optional EDO. EDO is a kind of page mode and is useful for the read operation.