TAA 840 Search Results

256K x 8 SRAM CY7C128A SRAM

Abstract: 5962-86705 PLD28 5962-89935 pld20ra10 5962-89598 CY7C132 cy7c291 PLD20RA PLDC20G10
Contextual Info: Military Product Selector Guide Static RAMs Size Organization Pins DIP SMD Number Part Number Speed (ns) ICC/ISB/ICCDR (mA @ ns) 883 Availability 1K 256 x 4 22 CY7C122 5962-88594 tAA = 25, 35 90 @ 25 Now 4K 1K x 4—Separate I/O 24S CY7C150 5962-88588 tAA = 25

Contextual Info: CY101E484 CY10E484 CY100E484 .1 ^ CYPRESS SEMICONDUCTOR Features • 4096 x 4-bit organization • Ultra high speed/standard power — tAA = 4 ,5 ns — I e e ~ 320 mA • Low-power version — tAA = 7,10 ns — Iee = 200 mA • Both 10KH/10K- and 100K-compatible I/O versions

Contextual Info: ^ CY10E422 CY100E422 » ss f^YPPP’^c; • 256 x 4-bit organization • Ultra high speed/standard power — tAA = 3.5 ns — U : e = 220 niA • Low-power version — tAA = 5 ns — I e e " 150 inA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version

Contextual Info: r CYPRESS SEMICONDUCTOR Features • Open em itter output for ease of memory expansion • 16,384 x 4 bits organization • Ultra high speed/standard power • — tAA = 7 ns Industry standard pinout Functional Description — IE E = 180 mA • CY1E494 CY10E494

Contextual Info: CY10E422 CY100E422 i s ^ Y p p p c ;< ^ • ■ ■ ^ s \ # f SEMICONDUCTOR Features • Open em itter output for ease of memory expansion • Ultra high speed/standard power — tAA = 3.5 ns • Industry-standard pinout — Iee = 220 mA Functional Description

Contextual Info: SY10L474-5/7 SY100L474-5/7 SY101L474-5/7 LOW-POWER 1K x 4 ECLRAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 5/7ns max. ■ Chip select access time, tAc: 3ns max. ■ Write pulse width, tww: 5ns min. ■ Write recovery times under 5ns

PLD28

Abstract: 22V10-Macrocell 5962-86705 5962-89598 cy7c291 PLDC20G10 CY6116A CY7C128A CY7C168A CY7C185A
Contextual Info: Military Product Selector Guide Static RAMs Size Organization Pins DIP SMD Number Part Number Speed (ns) ICC/ISB/ICCDR (mA @ ns) Availability 16K 2K x 8—CS Power-Down 24S CY7C128A 5962-89690 tAA = 20, 25 125 @ 20 Now 16K 2K x 8—CS Power-Down 24S CY7C128A

Contextual Info: CY101E484 CY10E484 CY100E484 r CYPRESS SEMICONDUCTOR Features 4K x 4 ECL Static RAM • Open emitter output for ease o f memory expansion 4096 x 4-bit organization • Industry-standard pinout Ultra high speed/standard power — tAA = 4, 5 ns — Ie e = 320 III A

CY6116A

Abstract: CY7C128A CY7C168A CY7C185A CY7C198 CY7C199 CY37128 5962-85525 84036 Product Selector Guide
Contextual Info: Military Product Selector Guide Static RAMs Size Organization Pins DIP Part Number SMD Number Speed (ns) ICC/ISB/ICCDR (mA @ ns) Availability 16K 2K x 8—CS Power-Down 24S CY7C128A 5962-89690 tAA = 20, 25 125 @ 20 Now 16K 2K x 8—CS Power-Down 24S CY7C128A

K74 PACKAGE DIAGRAM

Abstract: IR 10e 1h
Contextual Info: = ^~' _ = p r e l im in a r y . ^ SEMICONDUCTOR Features • CY10E494 CY100E494 CY101E494 16,384 x 4 bits organization • Ultra high speed/standard power — tAA = 7 ns — I f E — 180 mA 16,384 x 4 ECL Static RAM • Open emitter output for ease of

Contextual Info: * SY10494-6/7 SY100494-6/7 SY101494-6/7 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Address access time, tAA: 6/7ns max. ■ Chip select access time, tAc: 3ns max. ■ Edge rate, tr/tf: 500ps typ. ■ Write recovery times under 5ns ■ Power supply current,

Contextual Info: * SY10494-5 SY10494-6 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 5/6ns max. Chip select access time, tAc: 3ns max. Edge rate, tr/tf: 500ps typ. Eliminates write recovery glitch found on

SY101L484

Contextual Info: TD013Ö1 QDDD07C1 b27 S7E D SYNERGY SEMICONDUCTOR Address access time, tAA: 7/8/1 Ons max. Chip select access time, tAc: 3/4/5ns max. Eliminates write recovery glitch found on competitors’ ECL RAMs Low power supply current, I e e : -180m A min. Designed for alpha particle immunity

Contextual Info: * SY10484-3.5/4/5/6 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3.5/4/5/6ns max. Chip select access time, tAC: 3ns max. Edge rate tr/tf : 500ps (typ.) Eliminates write recovery glitch found on

Contextual Info: * SY10L494-10 SY100L494-10 SY101L494-10 LOW-POWER 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 10ns max. Chip s e le c t a c c e s s tim e , tAc: 3ns m ax. Write recovery times under 5ns

AH 101K

Abstract: sd 484 ip
Contextual Info: CY101E484 CY10E484 CY100E484 CYPRESS SEMICONDUCTOR W Features • 40% x 4-blt organization • U ltra high speed/standard power — tAA = 4 , 5 ns — I ee s 320 mA • Low-power version — ‘ a a = 7, 10 ns — I ee = 200 mA • Both 10KH/10K- and 100K-compatible I/O versions

Contextual Info: SYNERGY SEMICON DUC TOR S7E ]> • ^001301 0000053 310 SY10494-5/6 S Y N E R G Y SEMICONDUCTOR X^ RAM SY100494-5/6 SY101494-5/6 -r-^ 6 -2 5 -1 0 DESCRIPTION FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Address access time, tAA: 5/6ns max. Chip select access time, tAc: 3ns max.

sy-10

Abstract: SY100474
Contextual Info: SY10/100/101474-3 SY10/100/101474-4 SY10/100/101474-5 SY10474-3/4/5/7 SY10/100/101474-7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.

Contextual Info: * SY10422-2.5/3/4/5/7 SY100422-2.5/3/4/5/7 SY101422-2.5/3/4/5/7 255 x 4 ECL RAM SYNERGY S E M IC O N D U C TO R DESCRIPTION FEATURES • Address access time, tAA: 2.5/3/4/5/7ns max. ■ Block select access time, tAB: 2ns max. ■ Write pulse width, tww: 3ns min.

SY101422

Contextual Info: SY10422-3/4/5/7 SY100422-3/4/5/7 SY10422-3/4/5/7 SY101422-3/4/5/7 SY100422-3/4/5/7 SY101422-3/4/5/7 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.

SA WA

Abstract: SY101474-4 SY100474 1024-words-by-4-bits
Contextual Info: SY10/100/101474-3 SY10/100/101474-4 SY10/100/101474-5 SY10474-3/4/5/7 SY10/100/101474-7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.

MBT- 100K

Contextual Info: SYNERGY SEMI CON D U CT OR *SYNERGY S7E ]> • T0013A1 0000033 SE2 I SY10484-3.5/4/5/6 4K x 4 ECL RAM SY100484-3.5/4/5/6 SY101484-3.5/4/5/6 SEMICONDUCTOR -T -H é -Z 3 '0 8 ■ FEATURES Address access tim e, tAA: 3.5/4/5/6ns max. Chip select access tim e, tAc: 3ns max.

SY101422

Contextual Info: SY10422-3/4/5/7 SY100422-3/4/5/7 SY10422-3/4/5/7 SY101422-3/4/5/7 SY100422-3/4/5/7 SY101422-3/4/5/7 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.

Contextual Info: LOW POWER * ovlnm îû î’ï ü n -1c i / „ a c m DAn/i 16K x 4 E C L R A M S t N E n G a SEMICONDUCTOR S Y100L494-7/8/10 SY101L494-7/8/10 DESCRIPTION FEATURES • Address access time, tAA: 7/8/1 Ons max. ■ Chip select access time, tAc: 3/4/5ns max.