TAA 293 Search Results

colour tv circuit diagram

Abstract: colour tv power supply circuit diagram colour television power circuit diagram TAA 293 matrix COLOUR TV SCHEMATIC DIAGRAM 630S 630-S TAA630S colour television schematics colour tv circuit
Contextual Info: TAA 630S LINEAR INTEGRATED CIRCUIT SYNCHRONOUS DEMODULATOR FOR PAL COLOUR TV SETS The TAA 630 S is a silico n m on olithic integrated c irc u it in a 16-lead dual in -lin e plastic package. It incorporates the follow ing fun ctions: — active synchronous dem odulators fo r F B-Y and ± F (R-Y) signals

IS66WVC2M16ALL

Abstract: CellularRAM 66WVC2M16ALL
Contextual Info: IS66WVC2M16ALL 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several

IS66WVC1M16ALL

Abstract: CellularRAM 66WVC1M16ALL
Contextual Info: IS66WVC1M16ALL Advanced Information 16Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several

Contextual Info: IS66WVC2M16ALL Preliminary Information 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several

Contextual Info: IS66WVC2M16ALL Advanced Information 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several

Contextual Info: 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAMTM 1.5 Memory MT45W4MW16BCGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.70V–1.95V VCC 1.70V–3.30V VCCQ1

BCR100

Contextual Info: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc

A23L1616

Abstract: A23L16161 A23L16162
Contextual Info: A23L1616/A23L16161/A23L16162 Series Preliminary 2M X 16 / 4M X 8 BIT CMOS MASK ROM Document Title 2M X 16 / 4M X 8 BIT CMOS MASK ROM Revision History History Issue Date Remark 0.0 Initial issue June 26, 2001 Preliminary 0.1 Change Access Time: September 13, 2002

Contextual Info: “H Y U N D A I HYM536A410A M-Series 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A41OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5117400A in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.

WINBOND W24258s

Abstract: W24258S-70LE W24258-70LE W24258 W24258-70LI W24258H W24258Q-70LE W24258Q-70LI W24258S-70LI 204790
Contextual Info: W24258 32K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24258 is a normal speed, very low power CMOS static RAM organized as 32768 × 8 bits that operates on a wide voltage range from 2.7V to 5.5V power supply. The W24258 family, W2425870LE and W24258-70LI, can meet requirement of various operating temperature. This device is

Contextual Info: HYUNDAI H Y 5 1 1 7 1 0 0 SEMICONDUCTOR Series 16Mx 1-bit CM OS DRAM DESCRIPTION The HY5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: CYDC128B16 1.8 V 4 K/8 K/16 K x 16 and 8 K/16 K × 8 ConsuMoBL Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location ■ Full asynchronous operation ■ 4/8/16 K × 16 and 8/16 K × 8 organization

Contextual Info: CY62158E MoBL 8-Mbit 1 M x 8 Static RAM 8-Mbit (1 M × 8) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an

MICRON POWER RESISTOR 2W

Contextual Info: OBSOLETE 256K, 512K x 64 SGRAM SODIMMs MT2LG25664 K H, MT4LG51264(K)H SYNCHRONOUS GRAPHICS RAM SODIMM For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT (Front View)

Contextual Info: CY62158EV30 MoBL 8-Mbit 1024 K x 8 Static RAM 8-Mbit (1024 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62158DV30 ■ Ultra low standby power ❐ Typical standby current: 2 A

Contextual Info: HY638100AS/HY6381OOAL HYUNDAI 128 X 8 Bit FAST SRAM PRELIMINARY DESCRIPTION The HY638100 is a 1,048,576 -bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The HY638100 uses eight common input and output liness and has an output enable pin which operates

Contextual Info: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C

Contextual Info: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C

Contextual Info: 4, 8, 16 MEG x 64 SDRAM SODIMMs MT4LSDT464 L H, MT8LSDT864(L)H, MT8LSDT1664(L)H SMALL-OUTLINE SDRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View)

ZM35

Abstract: SO-DIMM 144-pin
Contextual Info: 8 MEG x 72 SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE MT9LSDT872HG For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES 144-Pin Small-Outline DIMM 64MB • JEDEC-standard 144-pin, small-outline, dual

Contextual Info: W957D6HB 128Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality

Contextual Info: 8 MEG x 64 SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE MT4LSDT864 L H For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View) 144-Pin Small-Outline DIMM • JEDEC-standard, PC100, rev 1.0, 144-pin, smalloutline, dual in-line memory module (SODIMM)

D8560

Abstract: D-85609
Contextual Info: 4, 8, 16 MEG x 64 SDRAM SODIMMs SMALL-OUTLINE SDRAM MODULE MT4LSDT464 L H, MT8LSDT864(L)H, MT8LSDT1664(L)H For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View) • JEDEC-standard 144-pin, small-outline, dual inline memory module (SODIMM)

Contextual Info: SG572128CH8SZUU1 October 21, 2009 Ordering Information Part Numbers Description Module Speed SG572128CH8SZKA1 512Mx72 4GB , DDR3, 244-pin Unbuffered Mini-DIMM, ECC, 512Mx8 Based (Stacked - two 256Mx8), DDR3-800555, 18.75mm, Green Module (RoHS Compliant).