TA1766 Search Results

2E12

Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically

FSJ264

Abstract: MIL-S-19500 1E14 2E12 FSJ264D FSJ264D1 FSJ264D3 FSJ264R FSJ264R1
Contextual Info: S E M I C O N D U C T O R FSJ264D, FSJ264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 33A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ260R3
Contextual Info: FSJ260D, FSJ260R 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 44A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSJ264D, FSJ264R S em iconductor 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 33A, 250V, i"[ s ON) = 0.080£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

la 4548

Abstract: 1E14 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3
Contextual Info: FSYC264D, FSYC264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 34A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

FSj264

Contextual Info: FSJ264D, FSJ264R TM Data Sheet February 2001 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs File Number 4340.3 Features • 33A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

Contextual Info: FSJ264D, FSJ264R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features • Description 33A, 250V, rDS 0N = 0.080Q • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

Contextual Info: FSYC260D, FSYC260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs juiy 1998 Features Description • 46A, 200V, r[js ON = 0.050£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s

FSJ260

Abstract: MIL-S-19500 1E14 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 ta1766
Contextual Info: S E M I C O N D U C T O R FSJ260D, FSJ260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 44A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 FSJ160R3
Contextual Info: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

FSJ160R3

Abstract: 2E12 FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 Rad Hard in Fairchild for MOSFET
Contextual Info: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSJ264D FSJ264D1 FSJ264D3 FSJ264R FSJ264R1
Contextual Info: FSJ264D, FSJ264R Data Sheet 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2000 • 33A, 250V, rDS ON = 0.080Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

2E12

Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4
Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

1E14

Abstract: 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1
Contextual Info: FSJ260D, FSJ260R Data Sheet 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2000 • 44A, 200V, rDS ON = 0.050Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

POWER VDMOS

Contextual Info: FSYC264D, FSYC264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 34A, 250V, Tqs ^o N = 0.080£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

19500 TRANSISTOR 50A

Contextual Info: HARRIS SENICONÏ SECTOR 5ÖE D fX H A R R I S • M3DSE71 DD457S7 BG3 « H A S 2N7299D, 2N7299R 2N7299H SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRK160 D, R, H) December 1992 Radiation Hardened N-Channel Power MOSFETs Features • 50A, 100V, RD6(on) - 0.040Q

Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description . 70A, 100V, rDS 0 N = 0.022£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

Contextual Info: S E M I C O N D U C T O R FSJ264D, FSJ264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 33A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 Rad hard MOSFETS in Harris
Contextual Info: S E M I C O N D U C T O R FSJ160D, FSJ160R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: Œ M A FSJ264D, FSJ264R 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 33A, 250V, rDS 0N = 0.0800 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

smd diode 46A

Abstract: 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 46a transistor smd
Contextual Info: FSYC260D, FSYC260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

1E14

Abstract: 2E12 FSJ264D FSJ264D1 FSJ264D3 FSJ264R FSJ264R1 FSJ264R3
Contextual Info: FSJ264D, FSJ264R 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 33A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically