FSYC264R Search Results

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Abstract: 1E14 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3
Contextual Info: FSYC264D, FSYC264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 34A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

VDMOS reliability testing report

Contextual Info: FSYC264D, FSYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs [ /Title The Discrete Products Operation of Intersil has developed a FSYC series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

1E14

Abstract: 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3
Contextual Info: FSYC264D, FSYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs December 2000 • 34A, 250V, rDS ON = 0.080Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

POWER VDMOS

Contextual Info: FSYC264D, FSYC264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 34A, 250V, Tqs ^o N = 0.080£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

1E14

Abstract: 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYC264D, FSYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: FSYC264D, FSYC264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs juiy 1998 Features Description • 34A, 250V, r[js ON = 0.080£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s

Contextual Info: FSYC264D, FSYC264R TM Data Sheet February 2001 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs • 34A, 250V, rDS ON = 0.080Ω The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.