T4C16256 Search Results

Contextual Info: MICRON B M T4C16256/7/8/9 L 256K X 16 WIDE DRAM BCMICDNDUCTaH. WC WIDE DRAM 256K x 16 DRAM LOW POWÉR, EXTENDED REFRESH FEATURES MARKING • T im ing 60ns access 70ns access 80ns access • W rite Cycle Access BYTE o r W ORD via WE nonm askable BYTE or W ORD via CAS

4C16257

Contextual Info: PRELIMINARY M T4C16256/7/8/9 L 256K X 16 WIDE DRAM ICRON WIDE DRAM 256K x 16 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 p inouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply

Contextual Info: m i t i » T4C16256/7/8/9 L 256K X 1 6 WIDE DRAM MICRON • SEMICONDUCTOR. MC WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

Contextual Info: '993 Tí* PRELIMINARY T4C16256/7/8/9 256K X 16 WIDE DRAM MICRON I SCHICONDUCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES OPTIONS PIN ASSIGNMENT Top View 40-Pin SOJ (DC-6) Vcc [ 1 DOl [ 2 D02 E 3 D03 E 4 004 [ 5 • Write Cycle Access _ BYTE or WORD via WE

Contextual Info: PRELIMINARY T4C16256/7/8/9 L 256K X 16 WIDE DRAM M IC R O N 256KX16DRAM WIDE DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIG N M EN T Top View OPTIONS • Write Cycle Access BYTE or WORD via WE - (maskable) BYTE or WORD via CÄS (maskable) • Packages

Contextual Info: m . i s T4C16256/7/8/9 256K X 16 WIDE DRAM MICRON • ««ICOHOliCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% pow er supply*

Contextual Info: HICR0N TECHNOLOGY INC bOE D • b l l l S H 1! GGObbOl 43b ■ urn PRELIMINARY 256K x 16 DRAM WIDE DRAM FAST-PAGE-MODE SELF REFRESH FEATURES PIN ASSIGNMENT Top View • SELF REFRESH, or "Sleep M ode" • Industry-standard x l6 p inouts, tim ing, functions

Contextual Info: PRELIMINARY T4C16256/7/8/9 256KX 16 WIDE DRAM MICRON WIDE DRAM 256K 16 DRAM X FAST-PAGE-MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 500m W active, typical

0Q1335

Contextual Info: PRELIMINARY M T4C 16256/7/8/9 256K X 16 W IDE DRAM I^IICZROIM 256K X 16 DRAM WIDE DRAM FEATURES PIN ASSIGNMENT Top View • I n d u s try -s ta n d a rd x l6 p in o u ts, tim in g , fu n ctio n s a n d p ack ag e s • H ig h -p e rfo rm a n c e C M O S silicon-gate pro c e ss

Contextual Info: m ' i PRELIMINARY T4C16256/7/8/9 L 256K X 16 WIDE DRAM MICRON I SEMICONDUCTOR MC WIDE DRAM 256K x 16 DRAM LOW POWER, EXTENDED REFRESH FEATURES • In d u stry -stan d ard x l6 pinouts, tim ing, functions a n d packages • H igh-perform ance CMOS silicon-gate process

RCD 2226

Contextual Info: ADVANCE M T 4 C 16256/7/8/9 256K X 16 DRAM p ilC Z R O IM DRAM 256K x 16 DRAM FAST PAGE MODE PIN ASSIGNMENT Top View • Industry standard x l6 pinouts, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply

Contextual Info: PRELIMINARY ICRON M T 4C 16256/7/8/9 S 256K X 16 W IDE DRAM 256K X 16 DRAM WIDE DRAM FEATURES PIN ASSIGNMENT Top View • SELF REFRESH, or "Sleep M ode" • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM OS silicon-gate process

MT4C16257

Abstract: MT4C16256DJ-7 MT4C1625
Contextual Info: ADVANCE M T4C 16256/7/8/9 L 256K X 16 DRAM M IC R O N DRAM 256K x 16 DRAM g LOW POWER, EXTENDED REFRESH < FEATURES • Industry standard xl6 pinouts, tim ing, functions and packages • High-perform ance, CMOS silicon-gate process • Single +5V ±10% pow er supply

T4C16257

Abstract: MT4C16256
Contextual Info: T4C16256/7 256K X 16 DRAM M IC R O N D R A M X 2 5 6 K 1 6 D R A M FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 375m W active, typical

Contextual Info: PRELIMINARY 256K W IDE DRAM 16 DRAM X FAST-PAGE-MODE SELF REFRESH FEATURES PIN A SSIG N M EN T Top View • SELF REFRESH, or "Sleep M ode" • Industry-standard x l6 pinouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process

Contextual Info: PRELIMINARY T4C16256/7/8/9 256K X 16 WIDE DRAM MICRON 256K WIDE DRAM 16 DRAM X FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% pow er supply • Low power, 3mW standby; 500mW active, typical

Contextual Info: PRELIMINARY T4C16256/7/8/9 S 256K X 16 WIDE DRAM I^ IIC Z R O N WIDE DRAM 256K x 16 DRAM FEATURES • SE L F REFRESH , or "S lee p M o d e " • In d ustry -stan dard x l6 pin ou ts, tim ing, functions an d p a ck a g e s • H igh -perform an ce C M O S silicon-gate process

Contextual Info: RPR 1 1993 PRELIMINARY M IC P D N I 1 IW = ! » T M T 4 0 1 6 2 5 6 /7/8 /9 S 2 5 6 K X 16 W ID E D R A M WIDE DRAM 256K x 16 DRAM FEATURES OPTIONS PIN ASSIGNMENT Top View 40-Pin SOJ (DC-6) Vcc I 1 DQ1 I 2 D 02 [ 3 DQ3 [ 4 DQ4 C S Vcc DQ5 DQ6 DQ7 DOS

AU 6256 28

Abstract: 4043 cmos rs latch
Contextual Info: PRELIMINARY T4C16256/7/8/9 L 256K X 16 WIDE DRAM M IC R O N 256K x 16 DRAM WIDE DRAM FEATURES PIN ASSIGNMENT Top View • In d u stry -stan d a rd x l 6 p in o u ts, tim in g , fu n ctio n s an d p ack ag es • H ig h -p e rfo rm a n ce C M O S silico n -g a te process

MT42C256K16A

Abstract: MT42C256
Contextual Info: ADVANCE MT42C256K16A1 256K X 16 VRAM M IC R O N VRAM 256Kx 16 DRAM WITH 512x16 SAM PIN ASSIGNMENT T o d View • In d u s try -s ta n d a rd p in o u t, tim in g a n d fu n ctio n s • H ig h -p e rfo rm a n c e , C M O S silicon-gate p ro cess • Single +5V ±10% p o w e r s u p p ly

Contextual Info: M ICRON SEM ICONDUCTOR INC b 'iE D m b i l l 5 HT G D G cì cì f i 3 B i MRN T4C16256/7 L 256K X 16 DRAM MICRON I TTh SEPiCO ND'J CIO FiU JC. 256K x 16 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions and packages

Contextual Info: MICRON SEMICOND UCT OR INC bTE D • b l l l S M 11! DDÜTTbö 7ÖT ■ MRN M ir D H M 1 semiconductor inc. T4C16256/7 256K X 16 DRAM 2 5 6 K X 16 DRAM DRAM FAST PAGE MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

Contextual Info: PlICRON SEMICONDUCTOR INC b3E D WÊ blllSMT QODflbSM SSS W M R N MICRON I MT 4C16256/7/8/9 256K X 16 WIDE DRAM SEMICONDUCTOR MC WIDE DRAM 256Kx 16DRAM FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

MT4C16257

Contextual Info: PRELIMINARY |viic:noN 256K T4C16256/7/8/9 16 WIDE DRAM X 256K X 16 DRAM WIDE DRAM FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply