MT4C16256 Search Results

Contextual Info: m i t i » MT4C16256/7/8/9 L 256K X 1 6 WIDE DRAM MICRON • SEMICONDUCTOR. MC WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

Contextual Info: '993 Tí* PRELIMINARY MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON I SCHICONDUCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES OPTIONS PIN ASSIGNMENT Top View 40-Pin SOJ (DC-6) Vcc [ 1 DOl [ 2 D02 E 3 D03 E 4 004 [ 5 • Write Cycle Access _ BYTE or WORD via WE

Contextual Info: PRELIMINARY MT4C16256/7/8/9 L 256K X 16 WIDE DRAM M IC R O N 256KX16DRAM WIDE DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIG N M EN T Top View OPTIONS • Write Cycle Access BYTE or WORD via WE - (maskable) BYTE or WORD via CÄS (maskable) • Packages

Contextual Info: m . i s MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON • ««ICOHOliCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% pow er supply*

Contextual Info: PRELIMINARY MT4C16256/7/8/9 256KX 16 WIDE DRAM MICRON WIDE DRAM 256K 16 DRAM X FAST-PAGE-MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 500m W active, typical

Contextual Info: m ' i PRELIMINARY MT4C16256/7/8/9 L 256K X 16 WIDE DRAM MICRON I SEMICONDUCTOR MC WIDE DRAM 256K x 16 DRAM LOW POWER, EXTENDED REFRESH FEATURES • In d u stry -stan d ard x l6 pinouts, tim ing, functions a n d packages • H igh-perform ance CMOS silicon-gate process

T4C16257

Abstract: MT4C16256
Contextual Info: MT4C16256/7 256K X 16 DRAM M IC R O N D R A M X 2 5 6 K 1 6 D R A M FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 375m W active, typical

Contextual Info: PRELIMINARY MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON 256K WIDE DRAM 16 DRAM X FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% pow er supply • Low power, 3mW standby; 500mW active, typical

Contextual Info: PRELIMINARY MT4C16256/7/8/9 S 256K X 16 WIDE DRAM I^ IIC Z R O N WIDE DRAM 256K x 16 DRAM FEATURES • SE L F REFRESH , or "S lee p M o d e " • In d ustry -stan dard x l6 pin ou ts, tim ing, functions an d p a ck a g e s • H igh -perform an ce C M O S silicon-gate process

AU 6256 28

Abstract: 4043 cmos rs latch
Contextual Info: PRELIMINARY MT4C16256/7/8/9 L 256K X 16 WIDE DRAM M IC R O N 256K x 16 DRAM WIDE DRAM FEATURES PIN ASSIGNMENT Top View • In d u stry -stan d a rd x l 6 p in o u ts, tim in g , fu n ctio n s an d p ack ag es • H ig h -p e rfo rm a n ce C M O S silico n -g a te process

MT4C16257

Abstract: RCD 2226 MT4C16256 256K 16bit DRAM zip
Contextual Info: MICRON TECHNOLOGY INC ADVANCE MICRON • TECHWfìl OGV INC. S5E » ■ b lllS H T MT4C16256/7/8/9 256KX 16 DRAM DÜD4S3T TTT ■ URN 2 5 6 K X 1 6 DRAM DRAM FAST PAGE MODE Zj-j'y • Industry standard xl6 pinouts, timing, functions and packages • High-performance, CMOS silicon-gate process

Contextual Info: ADVANCE MT4C16256/7/8/9 L 256KX 16 DRAM MICRON I r iCH NOLOGY. IN2 MICRON TECHNOLOGY INC 55E P DRAM • LlllSM'î 0G04Sbl IMS HIMRN JEW 256K X16 DRAM LOW POWER, EXTENDED REFRESH — - :- S -1 7 - PIN ASSIGNMENT Top View

Contextual Info: M ICRON SEM ICONDUCTOR INC b 'iE D m b i l l 5 HT G D G cì cì f i 3 B i MRN MT4C16256/7 L 256K X 16 DRAM MICRON I TTh SEPiCO ND'J CIO FiU JC. 256K x 16 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions and packages

Contextual Info: MICRON SEMICOND UCT OR INC bTE D • b l l l S M 11! DDÜTTbö 7ÖT ■ MRN M ir D H M 1 semiconductor inc. MT4C16256/7 256K X 16 DRAM 2 5 6 K X 16 DRAM DRAM FAST PAGE MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

Contextual Info: ADVANCE M IC R O N 1 MT4LG16257 S 256K DRAM DRAM 256K x 16 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply*

Contextual Info: HICR0N TECHNOLOGY INC bOE D • b l l l S H 1! GGObbOl 43b ■ urn PRELIMINARY 256K x 16 DRAM WIDE DRAM FAST-PAGE-MODE SELF REFRESH FEATURES PIN ASSIGNMENT Top View • SELF REFRESH, or "Sleep M ode" • Industry-standard x l6 p inouts, tim ing, functions

MT4C16256DJ-7

Contextual Info: lU IIÖ Q ö lX I I techno lo g y. iN t MT4CÎ6256/7* 256K X 16 DRAM DRAM 256Kx 16DRAM FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply*

0Q1335

Contextual Info: PRELIMINARY M T4C 16256/7/8/9 256K X 16 W IDE DRAM I^IICZROIM 256K X 16 DRAM WIDE DRAM FEATURES PIN ASSIGNMENT Top View • I n d u s try -s ta n d a rd x l6 p in o u ts, tim in g , fu n ctio n s a n d p ack ag e s • H ig h -p e rfo rm a n c e C M O S silicon-gate pro c e ss

RCD 2226

Contextual Info: ADVANCE M T 4 C 16256/7/8/9 256K X 16 DRAM p ilC Z R O IM DRAM 256K x 16 DRAM FAST PAGE MODE PIN ASSIGNMENT Top View • Industry standard x l6 pinouts, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply

Contextual Info: ADVANCE MT4LC16256/7 S 256K X 16 DRAM IC R O N DRAM 256K x 16 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages • High-perform ance CM OS silicon-gate process • Single +3.3V ±0.3V pow er supply’

Contextual Info: PRELIMINARY ICRON M T 4C 16256/7/8/9 S 256K X 16 W IDE DRAM 256K X 16 DRAM WIDE DRAM FEATURES PIN ASSIGNMENT Top View • SELF REFRESH, or "Sleep M ode" • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM OS silicon-gate process

t3d01

Abstract: pin configuration of IC 1619 cp LM 3177 C16-256 MT4C16257
Contextual Info: PRELIMINARY M T 4C 16256/7/8/9 S 256K X 16 WIDE DRAM |U |I C R O N WIDE DRAM 2 5 6 K X 16 DRAM FAST-PAGE-MODE SELF REFRESH FEATURES OPTIONS P IN A S S IG N M E N T 4 0 -P in S O J T o p 4 0 -P in MARKING • Timing 70ns access -7 80ns access -8 • Write Cycle Access

MT4C16257

Abstract: MT4C16256DJ-7 MT4C1625
Contextual Info: ADVANCE M T4C 16256/7/8/9 L 256K X 16 DRAM M IC R O N DRAM 256K x 16 DRAM g LOW POWER, EXTENDED REFRESH < FEATURES • Industry standard xl6 pinouts, tim ing, functions and packages • High-perform ance, CMOS silicon-gate process • Single +5V ±10% pow er supply

Contextual Info: n i CR ON S E M I C O N D U C T O R IN b3E D • blllS^ OOOflbTb 11b ■ MICRON I k m ,c o n d u c t o » « c NRN M T 4C 16256/7/8/9 L 256K X 16 W ID ED R A M WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions