T3D 05 Search Results

Contextual Info: ALLEGRO NICROSYSTEMS INC T3D J> U 0504330 0003715 H • ALCR PRO CESS SLL Process SLL PNP Small-Signal Transistor Process SLL is a double-diffused epitaxial planar PNP silicon device. It is designed for use in generalpurpose amplifier and switching applications. Its

Contextual Info: Technical Data Sheet 0402 Package Chip LED 0.35mm Height 16-216/T3D-AQ1R2TY/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.

T3D 67 diode

Abstract: t3d diode BS6301 EFT 377 A LOA21 T3D 67 T3D 80 diode BS415 BS7002 LDA100
Contextual Info: CLARE CORPORATION bbE ]> H 2144^04 DDODPDfi T3D M C P C L Clirreilt SenSOTS Solid State Products D ivision • CPCIare C P / SOLID STATE • Solid State Current Sensors DESCRIPTION CP C lare's LDA series solid state current sensors provide an optically isolated

501C

Contextual Info: CLARE CP Ciane C P / S OL I ] ) STATE bbE D H E mM 'i D M DDOOPGfl T3D • C P C L Clirreilt SenSOrS Solid State Products Division CORPORATION Solid State Current Sensors DESCRIPTION CP Clare's LDA series solid state current sensors provide an optically isolated

T3D+53

Abstract: t3d 05 T3D 53
Contextual Info: SPRAGUE/SEMICOND GR OU P T3 85 14 01 9 SPRAGUE. D • 0513050 OGGBSTfl T ■ S E M I C O N D S / ICS D 93D 03598 PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain IcBO Device Type

Contextual Info: SPRAGUE/SEMICOND GROUP 85 14 0 19 SPRAGUE. T3 D • 0513050 ÜDQ3blô 1 ■ S E M I C O N D S / ICS 9 3 D 036 18j> " 0 I " ^ DIODE CHIPS ‘THD’ Rectifiers and General-Purpose Diodes ELECTRICAL CHARACTERISTICS atTA = 25°C vF Device Type THD457 THD458A

T4A 392

Abstract: T5A 392 T3D 89 392 t4a t3d 18 101T3DW105KR4CT
Contextual Info: JOHANSON m www.johansondielectrics.com H ig h T e m p e r a t u r e R a d ia l L e a d e d C a p a c it o r s K ey F eatures -jujhuni 1— mti • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill

OPF300

Abstract: LW khz receiver OPF500 OPF510 QPF500 QPF510 850 nm LED
Contextual Info: OPTEK Product Bulletin OPF500 February 1996 M i ^7^0500 0D0EÔ2G Obô H 200kbps Fiber Optic Receiver Type OPF5QO, OPF51Q Series Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Interfaces with all logic circuits • Two output options

Contextual Info: SP R AG UE /S EN IC ON D GROUP 8514019 SPRAGUE. ‘IB D • 0513050 G0D3573 5 ■ SEM ICONDS/ ICS 93D 0 3573 BIPOLAR TRANSISTOR CHIPS PNP Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C ^CE sal DC Current Gain 'cBO fr (V) (V) (nA)

Contextual Info: SPRAGUE/SENICOND 8514019 SPRAGUE. GROUP D • 0513050 S E M IC ON DS /ICS G QD 3 b G 4 1 93D 03604 J> - 7 ^ 2 .7 - z . s " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C Vgs oH VjBfljGSS I Device Type

Contextual Info: SP RA GU E/SEM IC OND GROUP 05 14 0 1 9 SPRAGUE. =13 D • S E M I C O N D S / ICS 0513050 0GG3SÔ3 fl ■ 93 D 0 3 5 8 3 JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g s ohj V(BRH3SS Limits Ig s s Conditions

T3D 75 diode

Abstract: T3D DIODE
Contextual Info: SPRAGUE/SEMICOND GROUP 8 5 1 4 0 1 9 SPRAGUE. ^3 D • ÖS13ÖS0 S E M I C O N D S / ICS G003bn 3 ■ 93D 03619 H fö f-O S DIODE CHIPS ‘THD’ Photodiodes ELECTRICAL CHARACTERISTICS at TA = 25°C Id Vbr Device Type THD9751 THD9752 II* Min. V (CtlR (l*A)

power 22E

Abstract: 2SC4399 ic power 22E
Contextual Info: SANYO SEMICONDUCTOR CÔRP 22E D 7m07h Q OO b T E T S F eatures • High power gain: PG= 25dB typ f= 100MHz •Very small-sized package permitting the 2SC4399-applied sets to be made small and slim Absolute Maximum R atings atT a= 2 5 0C Collector to Base Voltage

t3d 01

Abstract: LLC185R71E103MA01L LLC219R71C104MA01L cap 0612 x7r 1uf 10v LLC219R71C104MA01
Contextual Info: Capacitors Monolithic Ceramic Capacitors Low ESL o LLC18 0306 Rated Voltage (Vdc) TC Capacitance Thickness T (mm) LLC185R71H222MA01L 50 X7R 2.2nF 0.5+/-0.1 LLC185R71H332MA01L 50 X7R 3.3nF 0.5+/-0.1 LLC185R71H472MA01L 50 X7R 4.7nF 0.5+/-0.1 LLC185R71H472MA01L

TMPFBF244C

Abstract: tmpfj308 NJ32 TMPF5951 TMPF5952 TMPF5953 TMPF6451 TMPF6452 TMPF6453 TMPF6454
Contextual Info: SPRAGUE/SEÎ1IC0ND 8514019 SPRAGUE. GROUP T3 D • SEMICONDS/ ICS 0513050 93D QD03bll 03611 =1 ■ $ SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH V(BR]GSS Limits Igss Device Type Min. (V)

Contextual Info: 1997 • SHORT FORM CATALOG SENSITRON SEMICONDUCTOR BIPOLAR POWER TRANSISTORS NPN, TO-257 SHD4261 SHD4262 CONTIN. COLLECT. CURRENT COLLECT. TO EMITTER VOLTAGE COLLECT. TO BASE VOLTAGE EMITTER TO BASE VOLTAGE VCEO v CBO v EBO Volts Volts Volts Amps 80 80

T3D 53

Abstract: t3d 54 T3D 38 fl03
Contextual Info: HN29W3221 Series Preliminary Product Preview 4M word x 8-bit CMOS AND Flash Memory HITACHI The Hitachi HN29W 3221 is a 4M word x 8-bit C M O S Flash Memory, realizing on-board programming. It programs or erases data with only on-board power supply 3.3V V c c supply . It dose

Contextual Info: SPRAGUE/SEMICOND GROUP 8 5 1 4 0 1 9 S P R A GU E. ^3 Ô513S5G Û0D3S77 2 D S E M I C O N D S / ICS 93 D 03 577 If^ T-âl-îo BIPOLAR TRANSISTOR CHIPS PNP Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type fT 500

T3D 47 diode

Abstract: T3D 62 T3D 67 T3D 67 diode T3D 85 85310AYI-01LF T3D 3d t3d 62 diode ICS5310I-01 ICS85310AYI-01
Contextual Info: Low Skew, 1-to-10 Differential-to-3.3V, 2.5V LVPECL/ECL Fanout Buffer ICS85310I-01 DATA SHEET General Description Features The ICS85310I-01 is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V ECL/LVPECL Fanout HiPerClockS Buffer. The CLKx, nCLKx pairs can accept most

Contextual Info: S P RAG UE /S EM IC ON D GROUP 8 5 1 4 0 1 9 SPRAGUE, T3 D • S E M I C O N D S / ICS Ô S 1 3 ÔSD 0 D 0 3 5 7 G T 93D 035703 ~T'â7~ 9V BIPOLAR TRANSISTOR CHIPS NPN Transistors Power Devices ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain ^CBO

Contextual Info: S P RAG UE /S EM IC ON D GROUP =13 8 5 1 40 19 SPRAGUE. ÔS13ÔSD D DOOBSTB S E M I C O N D S / ICS Q 93D 03593 J /7~ T - 3 - 1 - ¿io PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘D’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C *CBO Device

2SK2352

Contextual Info: TOSHIBA Discrete Semiconductors 2SK2352 Field Effect Transistor Unit in m m Silicon N Channel M O ST ype m-MOS IV High Speed, High Current Switching, DC-DC Converter Chopper Regulator and Motor Drive Applications Features • 4V Gate Drive • Low Drain-Source ON Resistance

2N3416 Sprague

Contextual Info: SPRAGUE/SEMICOND ! 8514019 GROUP SPRAGUE! T3 D • 0 5 1 3 0 5 0 00Q35fifci 3 ■ SE M IC O N D S / IC S 93D 03586 Ï PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain

Contextual Info: SPRAGUE/SEMICOND CROUP 85 14 0 1 9 SPRAGUE, T3 D • S E M I C O N D S / ICS ÔS1 3 flS0 0 0 0 3 5 7 2 3 93D 03572 _ BIPOLAR TRANSISTOR CHIPS PNP Transistors T H ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C