T3D 05 Search Results

T3D 55

Abstract: 07E-07
Contextual Info: ALLEGRO MICROSYSTEMS INC T3D D • 0504336 0003713 S ■ ALGR PROCESS SKL Process SKL NPN Small-Signal Transistor The S K L Process produces double-diffused, NPN silicon epitaxial planar transistors intended for use in general-purpose amplifier or switching applications

Contextual Info: ALLEGRO NICROSYSTEMS INC T3D J> U 0504330 0003715 H • ALCR PRO CESS SLL Process SLL PNP Small-Signal Transistor Process SLL is a double-diffused epitaxial planar PNP silicon device. It is designed for use in generalpurpose amplifier and switching applications. Its

A1396

Contextual Info: ALLE6R0 MICROSYSTEMS INC T3D 1> • 05D433Ö DD03743 3 ■ ALGR PROCESS YCA Process YCA NPN Small-Signal Transistor Process Y C A is a double-diffused epitaxial planar N PN silicon transistor designed for use in generalpurpose switching and amplifier circuits. It can oper­

Contextual Info: Technical Data Sheet 0402 Package Chip LED 0.35mm Height 16-216/T3D-AQ1R2TY/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.

Contextual Info: Technical Data Sheet White Chip LED With Right Angle Lens 48-213/T3D-AP1Q2TY/3C Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.

Contextual Info: Technical Data Sheet White Chip LED With Right Angle Lens 48-213/T3D-AP1Q2TY/3C Features Package in 8mm tape on 7 diameter reel. Compatible with automatic placement equipment. Compatible with infrared and vapor phase reflow solder process. Mono-color type.

Contextual Info: Technical Data Sheet 0603 Package Chip LED 0.2mm Height 19-219/T3D-AQ2R2TY/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.

T3D 67 diode

Abstract: t3d diode BS6301 EFT 377 A LOA21 T3D 67 T3D 80 diode BS415 BS7002 LDA100
Contextual Info: CLARE CORPORATION bbE ]> H 2144^04 DDODPDfi T3D M C P C L Clirreilt SenSOTS Solid State Products D ivision • CPCIare C P / SOLID STATE • Solid State Current Sensors DESCRIPTION CP C lare's LDA series solid state current sensors provide an optically isolated

E76270

Abstract: T3D 67 diode t3d diode transistor c 2500 BS415 BS6301 BS7002 LDA100 LDA101 LDA110
Contextual Info: CLARE CORPORATION bbE ]> H 2144^04 DDODPDfi T3D M C P C L Clirreilt SenSOTS Solid State Products D ivision • CPCIare C P / SOLID STATE • Solid State Current Sensors DESCRIPTION CP C lare's LDA series solid state current sensors provide an optically isolated

lc 945 transistor

Abstract: transistor LC 945 2N3904 2N3904 F14 4102 transistor 2n3904 TRANSISTOR PNP transistor 4103
Contextual Info: ALLE&RO N I C R OSYSTEMS INC T3D » 0504330 0003733 0 • AL6R PROCESS TVO Process TVO NPN High-Speed Switching Transistor Process TVO is an NPN double-diffused silicon epitaxial planar device with gold diffusion. It is used as a general-purpose switch and amplifier. The PNP

501C

Contextual Info: CLARE CP Ciane C P / S OL I ] ) STATE bbE D H E mM 'i D M DDOOPGfl T3D • C P C L Clirreilt SenSOrS Solid State Products Division CORPORATION Solid State Current Sensors DESCRIPTION CP Clare's LDA series solid state current sensors provide an optically isolated

T3D+53

Abstract: t3d 05 T3D 53
Contextual Info: SPRAGUE/SEMICOND GR OU P T3 85 14 01 9 SPRAGUE. D • 0513050 OGGBSTfl T ■ S E M I C O N D S / ICS D 93D 03598 PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain IcBO Device Type

T3D DIODE

Abstract: T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE Diode T3D 08 T3D 18 diode T3D 77 diode Diode T3D 30 Diode T3D 35
Contextual Info: S P RAG UE /S EM IC ON D GROUP 8 5 14019 SPRAGUE, D • S E M I C O N D S / ICS 0513550 0003b27 S 93 D 0 3 6 2 7 SMALL-OUTLINE DIODES i ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type »rr Max. ns

Contextual Info: SPRAGUE/SEMICOND GROUP 85 14 0 19 SPRAGUE. T3 D • 0513050 ÜDQ3blô 1 ■ S E M I C O N D S / ICS 9 3 D 036 18j> " 0 I " ^ DIODE CHIPS ‘THD’ Rectifiers and General-Purpose Diodes ELECTRICAL CHARACTERISTICS atTA = 25°C vF Device Type THD457 THD458A

OPF300

Abstract: LW khz receiver OPF500 OPF510 QPF500 QPF510 850 nm LED
Contextual Info: OPTEK Product Bulletin OPF500 February 1996 M i ^7^0500 0D0EÔ2G Obô H 200kbps Fiber Optic Receiver Type OPF5QO, OPF51Q Series Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Interfaces with all logic circuits • Two output options

Contextual Info: SP R AG UE /S EN IC ON D GROUP 8514019 SPRAGUE. ‘IB D • 0513050 G0D3573 5 ■ SEM ICONDS/ ICS 93D 0 3573 BIPOLAR TRANSISTOR CHIPS PNP Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C ^CE sal DC Current Gain 'cBO fr (V) (V) (nA)

T3D 35 zener DIODE

Abstract: T3D zener DIODE t3d 99 diode diode zener t3d 23 T3D 91 DIODE T3D 95 Diode T3D 82 T3D 65 diode T3D 82 diode ZENER DIODE T3D
Contextual Info: SPR AGU E/SENIC OND GROUP 8 5 1 4 0 1 9 SPRAGUE. 13 D • 0513050 0003b54 7 ■ 93D 0 3624 I S E M I C O N D S /ICS DIODE CHIPS T H Z ’ S eries ‘W Zener Diodes ELECTRICAL CHARACTERISTICS at Tfl = 25°C Device Type Min. V Nom. (V) Max. (V) («Iff (mA)

Contextual Info: SPRAGUE/SENICOND 8514019 SPRAGUE. GROUP D • 0513050 S E M IC ON DS /ICS G QD 3 b G 4 1 93D 03604 J> - 7 ^ 2 .7 - z . s " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C Vgs oH VjBfljGSS I Device Type

Contextual Info: A COMPANY O r MODEL LPTJ3 Toroidal Inductor Surface Mount High Current FEATURES TYPICAL APPLICATIONS • Surface Mounted • /ride range of inductance and current ratings • Toroid design reduces EMI • Low Profile • Switching power suoplies • EMI/RFI Altering

Contextual Info: SP RA GU E/SEM IC OND GROUP 05 14 0 1 9 SPRAGUE. =13 D • S E M I C O N D S / ICS 0513050 0GG3SÔ3 fl ■ 93 D 0 3 5 8 3 JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g s ohj V(BRH3SS Limits Ig s s Conditions

T3D 75 diode

Abstract: T3D DIODE
Contextual Info: SPRAGUE/SEMICOND GROUP 8 5 1 4 0 1 9 SPRAGUE. ^3 D • ÖS13ÖS0 S E M I C O N D S / ICS G003bn 3 ■ 93D 03619 H fö f-O S DIODE CHIPS ‘THD’ Photodiodes ELECTRICAL CHARACTERISTICS at TA = 25°C Id Vbr Device Type THD9751 THD9752 II* Min. V (CtlR (l*A)

power 22E

Abstract: 2SC4399 ic power 22E
Contextual Info: SANYO SEMICONDUCTOR CÔRP 22E D 7m07h Q OO b T E T S F eatures • High power gain: PG= 25dB typ f= 100MHz •Very small-sized package permitting the 2SC4399-applied sets to be made small and slim Absolute Maximum R atings atT a= 2 5 0C Collector to Base Voltage

t3d 01

Abstract: LLC185R71E103MA01L LLC219R71C104MA01L cap 0612 x7r 1uf 10v LLC219R71C104MA01
Contextual Info: Capacitors Monolithic Ceramic Capacitors Low ESL o LLC18 0306 Rated Voltage (Vdc) TC Capacitance Thickness T (mm) LLC185R71H222MA01L 50 X7R 2.2nF 0.5+/-0.1 LLC185R71H332MA01L 50 X7R 3.3nF 0.5+/-0.1 LLC185R71H472MA01L 50 X7R 4.7nF 0.5+/-0.1 LLC185R71H472MA01L

Contextual Info: SPRAGUE/SEÎ1IC0ND GROUP 8 5 1 4 0 1 9 SP RA G UE . T3 D • SEMICONDS/ IC S 0513050 QD03bll =1 ■ 93D 03611 $ SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S o H Limits Igss V(flR]GSS Conditions