T39 DIODE Search Results

a564 transistor

Abstract: a684 transistor cat 7199 ca transistor a564 capacitor 226 35K 022 electrolytic transistor a684 A564 transistor datasheet up board exam date sheet 2012 D5653 B824 transistor
Contextual Info: TANTALUM LEADED CAPACITORS To find parts fast, visit at www.kemet.com. F-3100D 09/01 KEMET CAPACITORS Parts shown are actual size Due to ever changing technology, all series may not be depicted. Kemet Electronics Corporation P.O. Box 5928 • Greenville, SC 29606 • Tel: 864-963-6300

B824 transistor

Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

TANTALUM capacitor 685 35K

Abstract: 335 35K 685k 100v capacitor a564 transistor capacitor 336 35K 102 capacitor 226 35K 022 electrolytic cat 7199 ca K277 capacitor 685 35K 106 16k
Contextual Info: F-3100C 5/99 KEMET CAPACITORS Parts shown are actual size KEMET also manufactures Ceramic Leaded, and Surface Mount Capacitors — Tantalum and Ceramic. Refer to Catalog F-3101 — Ceramic Leaded, and F-3102 — Surface Mount Capacitors for detailed information on these products. GR500

ESAE83-004

Abstract: P460 SC-65 T151 T760
Contextual Info: ESAE83-004 6oa IW H N ii : Outline Drawings » a y | > * - / < i J 7 r S r' f » - K S C H O T T K Y B A R R IE R DIODE ^ 3.2 to. I V 5 *».i 2.0 7.2«# • # £ : Features • <sv, JEDEC EIAJ Low VF SC-65 Super high speed switching. Connection Diagram High reliability by planer design

diode ja8

Abstract: NE y Ja8 MARK 8E diode esja ne ja8 HIGH VOLTAGE DIODE 6kv HH1T 30S3 ESJA88 ESJA88-06
Contextual Info: ESJA88 6kv, 8 k V £ ± 'J *-K : Outline Drawings HIGH VOLTAGE SILICON DIODE D 7 hNo. ESJA881*, ^ tiv~ V-7—9 lot No. \ E * « * tt« » * - ^ K s * E 5 fc * ^ * - K T T o ESJA88 is high reliability resin molded type high voltage /cathode Mark \ / ^ 2.5

ALP202

Abstract: NLT4532 4433619 crystal Outline T44 LV4124W NLT4532-S4R4 T44 diode
Contextual Info: Ordering number : EN6000 Monolithic Linear IC LV4124W Single-chip LCD panel driver IC Supports the ALP202 LCD panel Overview Package Dimensions The LV4124W is a LCD panel driver for use in lowtemperature polysilicon TFT LCDs that integrates an RGB decoder, a driver, and a timing controller in a single chip.

ALP304

Abstract: ALP202 ALP208 ALP210 NLT4532 sanyo lcd alp208 EN6001 ALP30 AL-P21 NLT4532-S3R6B
Contextual Info: Ordering number : EN6001 Monolithic Linear IC LV4126W Single-chip LCD panel driver IC Supports the ALP202 /304LCD panel Overview Package Dimensions The LV4126W is a LCD panel driver for use in lowtemperature polysilicon TFT LCDs that integrates an RGB decoder, a driver, and a timing controller in a single chip.

Contextual Info: HITACHI/ OPTOELECTRONICS SIE » MMTbSÜS ODllOMM 473 IHIT4 T 3 GN6075E Silicon N Channel IGBT HITACHI Application Mar. 1992 TO-3PL High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max • Low on saturation voltage v CE(sat) = 4V m ax

Mikroelektronik Heft

Abstract: information applikation mikroelektronik "Mikroelektronik" Heft "halbleiterwerk frankfurt" mikroelektronik applikation A290D applikation heft mikroelektronik DDR mikroelektronik Heft 12 Mikroelektronik Information Applikation
Contextual Info: INFORMATION MIKROELEKTRONIK APPLIKATION INTEGRIERTER PLLSTEREO-DEKODER 220n A 290 n v /50 mA m m K m Information-Applikation Aufbau, Funktionsweise und Anwendung des integrierten PLL-StereodekoderSchaltkreises A 290 D Mikroelektronik Heft 3 veb Halbleiterwerk frankfurt/oder

Contextual Info: 3 7E SEMELAB LTD 0133107 D QQQQSm Q E G3 1 1987 SEMELAB • x fc BUZ 20 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm u _ 10.3 iu . J wi 13~*1 —* max. .I m 0X- -*]3.6K+|3.6|* m 4.5ma« 5.9 min. , i 15.8 max. L.}.,- APPLICATIONS • DC/DC CONVERTERS

Contextual Info: SEUELAB LTD 3 7E D 0133107 0 DG0B71 □ ISMLB T-39-11 SEMELAB n •S//AS ^ BUZ 72A o 7 Woo MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm _10.3_ max. -»|3.6|» 1.3 ¿.5ma«. T¥ 5.9' i. . 2. 8 min. Ì 15>.l.8 APPLICATIONS 10 max. ■4. J

IRF510

Abstract: IRF511 irf513 irf512 IRF-510
Contextual Info: □1 SUPERTEX INC D E £ 07732^5 □□□15ÛG t, IRF510 IRF511 IRF512 IRF513 T"~ i f * d 7 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Inform ation b v dss/ ^DS ON (max) W n) (min) Order Number / Package ^D G S 100V 60V 0.6Q 0.6Q 4.0A

T-3V05

Abstract: T3905 2N7012
Contextual Info: 33E D SILICONIX INC f f f S ilico n ix 0254735 OOlhOlO 1 « S I X • 2N7012 incorporated 'T '- S ^ - O S N-Channel Enhancement Mode Transistor 4-PIN DIP Similar to TO-250 TOP VIEW PRODUCT SUMMARY V(BR|DSS 60 T 0.35 *D (A) 1.2 1 GATE 2 SOURCE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

Contextual Info: SIE D • SEMIKRON a i 3 bb?l 0 0 D 3 SÖE SDS « S E K G s e m ik r d n INC Absolute Maximum Ratings Symbol Conditions 1 V ds V dgr Rgs kii = 20 Id Id m V gs Pd Tj, Tstg Visol humidity climate AC, 1 min, 200 iA DIN 40 040 DIN IEC 68 T.1 Values Units 400

Contextual Info: 3 Q E » • G ü s ^ i i ■ S G S -T H O M S O N >T - 3 R - u _ s 6 s -th o MSon tLH ¥[^@[^0ö©S SGSP222 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S on SGSP222 50 V 0.13 Í2 10 A • HIGH SPEED SWITCHING APPLICATIONS

Contextual Info: PowerMOS transistor_ F AMER PHILIPS/DISCRETE BUZ31 DbE D • LbS3T31 0014444 ~1 ■ rsi-n May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: N ANER PHI L I P S / D I S CR E T E bbSBTBl 0 0 1 4 7 7 3 4 ObE D HJZ330 T - 31-/3 PowerMOS transistor May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: N AUER P H I L I P S / D I S CR E T E OtE D PowerMOS transistor • ~ bbSBTBl QQ14ttl 4 ■ BUZ45B r-39-i3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

VP12C

Contextual Info: ÏËlfl7732TS DDD1743 fi T~ Dl 'SUPERTEX INC * -^ T U U I f u / VP12C Oì Supertex ine. T~-39-/ 9 P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information b v dss/ -160V -200V Order Number / Package *D ON (min) TO-3 2.5£2 -4.0A 2.5£i -4.0A

Contextual Info: SENELAB LT» 37E D 0133107 DDOOSbS S • SMLB ' SE1V9ELAB • * 5 y V ‘ > BUZ 63 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm -M I * - 1 .6 39.5 1 1 APPLICATIONS i • MOTOR CONTROL 20.3 16.9 i -H • SMPS 9.0 12.0 PIN 1 -G a te

Contextual Info: SEHELAB LTD 37E D • 0133107 0000317 S E iV lE L A B 2N 6799 2N 6800 MOS POWER N-Channel Enhancement Mode Dimensions in mm I 1 / Î 8.5 i i 1 max. i ^ 5.1 .9-4- ^ max mm. ^ • FAST SW ITCH IN G • M O TO R CO NTRO LS • POWER SUPPLIES max. PIN 1 - S o u r c e

buz72a

Contextual Info: N AMER PHILIPS/DISCRETE QbE D • PowerMOS transistor fc,b53131 001443? T ■ BUZ72A -j-_ 3 ^- jj May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: 2SE D N AUER PHILIPS/DISCRETE tbS3T31 0020325 7 BUK437-600A BUK437-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: SUPERTEX INC Dl DE I f l ? 7 3 2 cï 5 □ N-Channel Enhancement-Mode Vertical D M O S Power FETs Ordering Information Order Number / Package B V */ B V dqs ^DS ON (max) *D(ON) (min) 160 V m 6.0A VN1216N1 200V m 6.0A VN1220N1 TO-3 TO-220 Dice VN1216N2 VN1216N5