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Contextual Info: HITACHI/ OPTOELECTRONICS SIE » MMTbSÜS ODllOMM 473 IHIT4 T 3 GN6075E Silicon N Channel IGBT HITACHI Application Mar. 1992 TO-3PL High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max • Low on saturation voltage v CE(sat) = 4V m ax |
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GN6075E GD110MT |