T3125 Search Results

EMI FILTER 15A

Contextual Info: • VSBU-120-T3125B Open Frame Switching Power Supply Features •Universal Input Voltage 90-264 VAC, 47-63 Hz ·Internal EMI filter ·Input connector mates with Molex housing 09-50-3051 and Molex 2878 series crimp terminal ·Output connector mates with Molex housing 09-50-3061 or 09-503081, or 09-50-3131 and Molex 2878 series crimp terminal

VSUU-120-T3125A

Contextual Info: • VSUU-120-T3125A Open Frame Switching Power Supply Features •Universal Input Voltage 90-264 VAC, 47-63 Hz ·Internal EMI filter ·Input connector mates with Molex housing 09-50-3051 and Molex 2878 series crimp terminal ·Output connector mates with Molex housing 09-50-3061 or 09-503081, or 09-50-3131 and Molex 2878 series crimp terminal

VSUU-120-T3125A

Contextual Info: • VSUU-120-T3125A Open Frame Switching Power Supply Features •Universal Input Voltage 90-264 VAC, 47-63 Hz ·Internal EMI filter ·Input connector mates with Molex housing 09-50-3051 and Molex 2878 series crimp terminal ·Output connector mates with Molex housing 09-50-3061 or 09-503081, or 09-50-3131 and Molex 2878 series crimp terminal

Contextual Info: • VSBU-120-T3125A Open Frame Switching Power Supply Features •Universal Input Voltage 90-264 VAC, 47-63 Hz ·Internal EMI filter ·Input connector mates with Molex housing 09-50-3051 and Molex 2878 series crimp terminal ·Output connector mates with Molex housing 09-50-3061 or 09-503081, or 09-50-3131 and Molex 2878 series crimp terminal

Contextual Info: TE LEDYNE COMPONENTS EäE a w b a e D o üü ía4 3 â m g T-31-25 SD2204 SEMICONDUCTOR P-CHANNEL ENHANCEMENT MODE D-MOS FET ORDERING INFORMATION Sorted Chips in Conductive Waffle Pack TO-220AA TO-92 Plastic Package Description SD2204CHP SD2204BD -400V, 7000

2SK543

Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7*n7Q7b OOObTSO 2SK543 7 T-31-ZS ♦ N -C h an n el M O S Silicon FET 2024A FM Tuner, VHF-Band Amp Applications 1791C Features . Low noise. NF=1.8dB typ f=100MHz • High power gain. PG=27dB typ(f=100MHz) . Small reverse transfer capacitance. cras=0.035pF(VDS=10V,f=1MHz)

s2e transistor

Abstract: S2E MARKING cp 035 sanyo vds5 2SK242 2SK1065
Contextual Info: SANYO S E M I C O N D U C T O R 2SK1065 TTTTOTb ÜOOhTb? 2 SSE D CORP T - 3 1 ‘2 5 # N-Channel'Junction Silicon FET 2057 High-Frequency General-Purpose Amp Applications 2746 Features • Very small-sized package permitting 2SK1065-applied sets to be made smaller and slimmer

SOT103

Abstract: transistor SOT103 mosfet BF902 marking C1s philips mosfet
Contextual Info: P H ILIP S INTER NATIONAL 41E D B 7110â2b OQEtfl'ÎS T « ¡P H IN T-31-25 Philips S em iconductors Preliminary specification Silicon n-channel dual gate MOS-FET FEATURES • • BF902 QUICK REFERENCE DATA Short channel transistor with high ratio IYtsl:Cls

Contextual Info: HARRIS H li S E M I C O N D U C T O R 4bE D • 43022^ 00D0213 T ■HMS 1 = 3 1 -3 0 SI HARRIS H M F -0 6 14 0 200 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features * +11.5 dB MAG with +19 dBm Associated Output Power at 8 GHz * Chip Devices are Selected from

BU 2058

Abstract: 2SK932 OT100 transistor R3125
Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7TT707t 2SK932 000 3=1130 T T - J /- Z 5 N -C h an n el Junction Silicon FET 2050 High-Frequency Low-Noise Amp Applications 2841 A p p lic a tio n s • AM tu n e r RF am p, low-noise am p F e a tu re s • Adoption of FBET process

2SK1229

Abstract: 2ROPT
Contextual Info: l— 2SK1229 — - Preliminary SIE D • 44^205 DOIITÔT T06 ■ H I T 4 GaAsN-Channel HEMT ■ OUTLINE DRAWING SHF Converter RF Amplifier HITACHI/ OPTOELECTRONICS ■FEATURES • Low Noise, High Gain

sony 0642

Contextual Info: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron

Contextual Info: T - 3 I- 0 .3 T Silicon N Channel MOSFET Tetrode 32E D • fl23b320 OQLbflL? b BF 996 S I S IP SIEMENS/ SPCL-, SEMICONDS • • • For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk BF 996 S

2SK543

Abstract: transistor fet 2062
Contextual Info: SANYO SEMICONDUCTOR 2SK543 CORP SSE D 7*n7Q7b OOObTSO 7 T-31-ZS ♦ N -C h an n el M O S Silicon FET 2024A FM Tuner, VHF-Band Amp Applications 1791C Features . Low noise. NF=1.8dB typ f=100MHz • High power gain. PG=27dB typ(f=100MHz) . Small reverse transfer capacitance. cras=0.035pF(VDS=10V,f=1MHz)

avantek

Abstract: Avantek amplifier 140 2-18 GHz Low Noise Gallium Arsenide FET AVANTEK transistor ATF-13100 ATF-13100-GP3 ATF 351 Avantek amplifier 167 Avantek Amplifier AVANTEK oscillator
Contextual Info: AVANTEK INC 2GE D • limihb 0GGb544 ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET =1 ' -3.NZS Avantek Chip Outline Features • • • Low Noise Figure: 1.1 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB

NE32184A

Abstract: NE32100 NE32183A nec ne3 INE32184A
Contextual Info: NE C/ CALIFORNIA 3QE D tiMSTMlM Ü0Ü20SM fl • NECC 7 r .j/-z r r ULTRA LOW NOISE K-BAND HETRO JUNCTION FET NE32100 NE32183A NE32184A OUTLINE DIMENSIONS FEATURES • SUPER LOW NOISE FIGURE: NF = 1.0 d B T Y P a tf = 12 GHz NE32100 CHIP • HIGH ASSOCIATED GAIN:

SD303

Abstract: SD303CHP SD303DC
Contextual Info: TOPAZ SEMICONDUCTOR OSE D g TOfiSSEb O G a i D n □ | T -31-25 e sa S S 303 S E M IC O N D U C T O R N-CHAMNEL EMNANClEVIENT-^ODe DUAL ATE D-MOS FET ORDERING INFORMATION SD303CHP SD303DC SD303DC/R Sorted Chips In Carriers TO-52,4 Lead Package Shorting Rings

MGF1501

Abstract: lt 6249 IC TL 0841 2sc 1416 y A2SC
Contextual Info: MITSUBISHI {DISCRETE SC> DE Jfc.24,:iûa,:ï GDlOObM 5 M IT SU B ISH I SEMICONDUCTOR <GaAs FET> M G F1501 FOR L O W -N O ISE A M P L IF IE R S D U AL-G ATE N -CH AN N EL S C H O T T K Y -B A R R IE R -G A T E T Y P E 624 9 82 9 MITSUBISHI DISCRETE SC DESCRIPTION

T-31-25

Abstract: VG 10 SAMSUNG KSK211
Contextual Info: SAMSUNG SEMICONDUCTOR INC IfE D | 7 ^ 1 4 2 00D7Q11 7 | Under Development KSK211 SILICON N-CHANNEL JUNCTION FET , T-31-25 FM TUNER VHF AMPLIFIER S O T -2 3 • NF = 2.5 dB TYP • IY fsI = 9.0 mS (TYP) ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic

Contextual Info: AVANTEK S GE INC 0AVANTEK i m D m 000bS77 H ATF-26150 AT-10650-1 2-16 GHz Gênerai Purpose' Gallium Arsenide FET - T - 3.I-2S Avantek 50 mil Package Features • • • • Low Noise Figure: 1.8 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz

ATF-26100

Abstract: AVANTEK transistor
Contextual Info: A V A N T E K INC AVAN TEK 2GE D . • limibt 0QDb574 7 ATF-26100 AT-10600 2-18 GHz General Purpose Gallium Arsenide F E T I - 3 I-Z 5 Avantek Chip Outline Features • • • Low Noise Figure: 1.8 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz

S parameters for ATF 10136

Abstract: AVANTEK transistor Avantek atf-1323
Contextual Info: AVANTEK E GE INC D 0AVANTEK im n tb 0D0kiS35 a ATF-10136 0.5-12 GHz Low Noise Gallium Arsenide FET T'K-^S" Features • • • • • • Avantek 36 micro-X Package1 Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 20 mA High Associated Gain: 13.0 dB typical at 4 GHz

Avantek S

Abstract: Avantek, Inc AVANTEK transistor ATF13736TR1 Avantek atf-1323
Contextual Info: A V A N T E K INC 2QE T> 0AVANTEK lllllbt M ATF-13736 2-16 GHz General Purpose Gallium Arsenide FET Avantek 36 micro-X Package1 Features • • • • • ODGbSS? 7 High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB

Contextual Info: AVANTEK INC Ot.E D im n b t. OGGSibt. ATF-10235 2-12 GHz Low Noise Gallium Arsenide FET 0AVANTEK Ö | T-31-25 Avantek micro-X Package Features • Low Noise Figure 0.8 dB typical at 4 GHz • Low Bias V d s = 2V, lDs =20 mA • High Associated Gain 13.0 dB typical at 4 GHz