T13005 Search Results

T13005

Abstract: T13005D T1300 STT13005D
Contextual Info: T13005D High voltage fast-switching NPN power transistor Features • Integrated antiparallel collector-emitter diode ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting

Contextual Info: T1300 Series TCXO 10 to 50 MHz GREENRAY INDUSTRIES, INC. Rev - PRECISION QUARTZ TECHNOLOGY Ultra-Low Acceleration Sensitivity Low Phase Noise SPECIFICATIONS Frequency Output Symmetry Load Temp Stability Freq vs. Supply Freq vs. Load Short Term Aging Input Voltage

SOT-32FP

Abstract: STT13005 electronic ballast for fluorescent lighting electronic ballast for fluorescent lightings ibm rev.1.5 T13005 15663
Contextual Info: T13005FP High voltage fast-switching NPN power transistor Preliminary data Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting

spw 080

Abstract: LEM3225 CL-2M2012-900JT TKS 0603 FBM3216HS800-T ACB2012M-150-T LAL04TB 494LYF FBM2125HS420-T m5258
Contextual Info: CT Technologies - Cross Reference Competitor Part CTC Part 0402R CT0402CSF 0402CS-P CT0402CSF 0402CS L CT0402CSF 0402CS CT0402CSF 0402 CT0402CSF 555-0402 CT0402CSF PE-0402CD CT0402CSF 0402AS CT0402CSF ELJNK CT0402CSF GLZG CT0402CSF KQ0402 CT0402CSF KQT0402L

Contextual Info: SiS612EDNT www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 ID (A)f, g 50 50 50 RDS(on) () Max. 0.0039 at VGS = 4.5 V 0.0042 at VGS = 3.7 V 0.0058 at VGS = 2.5 V • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: SiS496EDNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0048 at VGS = 10 V 50 0.0062 at VGS = 4.5 V 50 VDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS tested Thin 0.75 mm height Typical ESD performance 2500 V

Contextual Info: T1300 Series TCXO 10 to 50 MHz GREENRAY INDUSTRIES, INC. Rev F PRECISION QUARTZ TECHNOLOGY Ultra-Low Acceleration Sensitivity Low Phase Noise SPECIFICATIONS Frequency Output Symmetry Load Temp Stability Freq vs. Supply Freq vs. Load Short Term Aging Input Voltage

Contextual Info: T1300 Series TCXO 10 to 50 MHz GREENRAY INDUSTRIES, INC. Rev C PRECISION QUARTZ TECHNOLOGY Ultra-Low Acceleration Sensitivity Low Phase Noise SPECIFICATIONS Frequency Output Symmetry Load Temp Stability Freq vs. Supply Freq vs. Load Short Term Aging Input Voltage

Contextual Info: T1300 Series TCXO 10 to 50 MHz GREENRAY INDUSTRIES, INC. Rev E PRECISION QUARTZ TECHNOLOGY Ultra-Low Acceleration Sensitivity Low Phase Noise SPECIFICATIONS Frequency Output Symmetry Load Temp Stability Freq vs. Supply Freq vs. Load Short Term Aging Input Voltage

STT1

Abstract: 0016114E JESD97 STT13005D T13005
Contextual Info: T13005D High voltage fast-switching NPN power transistor Features • Integrated antiparallel collector-emitter diode ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting

Contextual Info: T13005FP High voltage fast-switching NPN power transistor Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low

Contextual Info: SiS435DNT Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES • TrenchFET Gen III P-Channel Power MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)a 0.0054 at VGS = - 4.5V - 30a 0.0060 at VGS = - 3.7 V - 30a 0.0083 at VGS = - 2.5 V - 30a

Contextual Info: SiS439DNT www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)f 0.0110 at VGS = - 10 V - 50e 0.0195 at VGS= - 4.5 V - 43.5 VDS (V) - 30 • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package

Contextual Info: Package Information www.vishay.com Vishay Siliconix PowerPAK 1212-8T MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. A 0.70 0.75 0.80 0.028 0.030 MAX. 0.031 A1 0.00 - 0.05 0.000 - 0.002 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013

Contextual Info: New Product SiS322DNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Thin 0.75 mm height

ELECTRONIC BALLAST transistor DIAGRAM

Abstract: STT13005FP 15663
Contextual Info: T13005FP High voltage fast-switching NPN power transistor Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low

T13005

Abstract: STT13005 0016114E JESD97 st 125mA dc dc NPN POWER TRANSISTOR "SOT-32"
Contextual Info: T13005 High voltage fast-switching NPN power transistor General features • NPN bipolar transistor ■ Medium voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications

Contextual Info: SiS429DNT www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) MAX. ID (A) d 0.021 at VGS = -10 V -20 e 0.034 at VGS = -4.5 V -18.7 • • • • Qg (TYP.) 15 nC Thin PowerPAK 1212-8 Single D D 8

Contextual Info: SiS496EDNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0048 at VGS = 10 V 50 0.0062 at VGS = 4.5 V 50 VDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS tested Thin 0.75 mm height Typical ESD performance 2500 V

Contextual Info: T13005 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low

T13005

Abstract: STT13005 0016114E JESD97
Contextual Info: T13005 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low

75w75

Abstract: UMT13004 UMT13005 SZ-17
Contextual Info: POWER TRANSISTORS U MT13004 U T13005 4A, 700V, Fast Switching, Silicon NPN Mesa FEATU RES DESCRIPTION • • • • • • These high voltage glass passivated power transistors, in a plastic T0-220AB package, combine fast switching, low saturation voltage and rugged E s/b capability. They are

Contextual Info: SiS822DNT www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. ID (A) a 0.024 at VGS = 10 V 12 0.030 at VGS = 4.5 V 12 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg and UIS tested 3.8 nC • Thin 0.8 mm profile

Contextual Info: Si7615BDNT www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () MAX. 0.0054 at VGS = -4.5V 0.0060 at VGS = -3.7 V 0.0083 at VGS = -2.5 V 0.0140 at VGS = -1.8 V -20 ID (A) a Qg (TYP.) -30 a 57 nC • TrenchFET Gen III P-Channel Power MOSFET