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SIS612EDNT Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIS612EDNT-T1-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 50A SMT	Original	PDF	211.47KB

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Vishay Siliconix


Vishay Siliconix SIS612EDNT-T1-GE3 MOSFET N-CH 20V 50A PPAK1212-8S
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SIS612EDNT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiS612EDNT-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiS612EDNT-GE3 AN609, 8275m 3444u 7413m 2543m 8535m 1282m 6387m 18-Jun-13	PDF
Contextual Info: SiS612EDNT www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 ID (A)f, g 50 50 50 RDS(on) () Max. 0.0039 at VGS = 4.5 V 0.0042 at VGS = 3.7 V 0.0058 at VGS = 2.5 V • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	SiS612EDNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF