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    SIS429DNT Search Results

    SIS429DNT Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIS429DNT-T1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 20A POWERPAK1212 Original PDF 207.41KB
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    Vishay Siliconix SIS429DNT-T1-GE3

    MOSFET P-CH 30V 20A PPAK1212-8
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    DigiKey SIS429DNT-T1-GE3 Reel 6,000
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    Vishay Intertechnologies SIS429DNT-T1-GE3

    Trans MOSFET P-CH 30V 20A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS429DNT-T1-GE3)
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    Avnet Americas SIS429DNT-T1-GE3 Reel 32 Weeks 6,000
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    Mouser Electronics SIS429DNT-T1-GE3 2,950
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    Bristol Electronics SIS429DNT-T1-GE3 3,000 8
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    Quest Components () SIS429DNT-T1-GE3 2,400
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    SIS429DNT-T1-GE3 2,400
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    TTI SIS429DNT-T1-GE3 Reel 6,000
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    EBV Elektronik SIS429DNT-T1-GE3 33 Weeks 3,000
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    SIS429DNT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPICE Device Model SiS429DNT www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		SiS429DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiS429DNT www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) MAX. ID (A) d 0.021 at VGS = -10 V -20 e 0.034 at VGS = -4.5 V -18.7 • • • • Qg (TYP.) 15 nC Thin PowerPAK 1212-8 Single D D 8


    Original     		SiS429DNT SiS429DNT-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF