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    SIS435DNT Search Results

    SIS435DNT Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIS435DNT-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 30A 1212-8 Original PDF 8
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    SIS435DNT Price and Stock

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    Vishay Intertechnologies SIS435DNT-T1-GE3

    MOSFET P-CH 20V 30A PPAK1212-8
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    DigiKey () SIS435DNT-T1-GE3 Digi-Reel 11,994 1
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    SIS435DNT-T1-GE3 Tape & Reel 9,000 3,000
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    Avnet Americas SIS435DNT-T1-GE3 Tape & Reel 52 Weeks 3,000
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    Mouser Electronics () SIS435DNT-T1-GE3 2,127
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    SIS435DNT-T1-GE3 2,127
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    Verical SIS435DNT-T1-GE3 683 36
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    Vishay Siliconix SIS435DNT-T1-GE3

    SIS435DNT-T1-GE3 P-CHANNEL MOSFET TRANSISTOR, 22 A, 20 V, 8-PIN POWERPAK 1212
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    RS SIS435DNT-T1-GE3 Bulk 300
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    Vishay Intertechnologies SIS435DNTT1GE3

    Power Field-Effect Transistor, 30A I(D), 20V, 0.0054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SIS435DNTT1GE3 6,000
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    SIS435DNT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiS435DNT Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES • TrenchFET Gen III P-Channel Power MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)a 0.0054 at VGS = - 4.5V - 30a 0.0060 at VGS = - 3.7 V - 30a 0.0083 at VGS = - 2.5 V - 30a


    Original     		SiS435DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model SiS435DNT www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		SiS435DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF