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SIS322DNT Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIS322DNT-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 38.3A 1212-8	Original	PDF		8

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Vishay Intertechnologies


Vishay Intertechnologies SIS322DNT-T1-GE3 N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIS322DNT-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIS322DNT-T1-GE3	Tape & Reel		52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.21	Buy Now
Mouser Electronics	SIS322DNT-T1-GE3		2,677			1 $1.07 10 $0.49 100 $0.43 1000 $0.32 10000 $0.23	Buy Now
Newark ()	SIS322DNT-T1-GE3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.23	Buy Now
	SIS322DNT-T1-GE3	Cut Tape			3,000	1 - 10 - 100 - 1000 - 10000 $0.31	Buy Now
TME	SIS322DNT-T1-GE3				1	1 $1.00 10 $0.58 100 $0.40 1000 $0.28 10000 $0.27	Get Quote
EBV Elektronik	SIS322DNT-T1-GE3			53 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIS322DNT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product SiS322DNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Thin 0.75 mm height	Original	sis322dnt sis322dnt-t1-ge3 2011/65/eu 2002/95/ec +112-mar-12	PDF
Contextual Info: SiS322DNT_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sis322dnt an609 5140m 4232u +68430m 0951m 3836m 2438m 4315u 10-dec-13	PDF
Contextual Info: New Product SiS322DNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Thin 0.75 mm height	Original	sis322dnt sis322dnt-t1-ge3 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: New Product SiS322DNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Thin 0.75 mm height	Original	sis322dnt 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:	Original	siz916dt siz340dt siz914dt vmn-pt0306-1402	PDF
POWERPAK SO8 Abstract: SIS32 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V	Original	siz916dt vmn-pt0306-1209 powerpak so8 sis32	PDF