T0262 Search Results

20N35GVL

Abstract: HGT1S20N35G3VL HGT1S20N35G3VLS HGTP20N35G3VL HGT1S20N35G3VLS9A TA49076 ignition WITH IGBTS T0-262AA T0263AB
Contextual Info: HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs April 1995 Features Packages JEDEC TO-220AB • Logic Level Gate Drive COLLECTOR EMITTER • Internal Voltage Clamp GATE COLLECTOR FLANGE • ESD Gate Protection

Contextual Info: PD-91352A In te rn a tio n a l I ö R Rectifier IRF530NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF530NS Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 1 0 0 V R d S (o r) = 0 .1 1 f ì

Contextual Info: In te rn a tio n a l pd-9.i 6i 7b IRF3315S/L 1QR R e c t i f i e r _PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRF3315S Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching

Contextual Info: PD - 9.904B International IOR Rectifier IR L Z 2 4 S /L HEXFET Power MOSFET • • • • • Advanced Process Technology Surface Mount IRLZ24S Low-profile through-hole (IRLZ24L) 175°C Operating Temperature Fast Switching Description Third Generation HEXFETs from International Rectifier

Contextual Info: P D - 91742 International Iö R Rectifier IRF9Z24NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z24NS • Low-profile through-hole (IRF9Z24NL) • 175°C Operating Temperature • P-Channel • Fast Switching • Fully Avalanche Rated

Contextual Info: PD-91338F International IÖR Rectifier • • • • • • • IRL3103S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3103S Low-profile through-hole (IRL3103L) 175°C Operating Temperature Fast Switching

15N120C3

Contextual Info: HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HARFRIS S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, T C = 25°C The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching

G3N60B

Contextual Info: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high

12n60c3d

Abstract: IGBT 12n60c3D
Contextual Info: u A Q Q ie HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Description • 24A, 600V at T c = 25°C This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transis­

Contextual Info: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS H A R R IS semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Packaging Features JEDEC TO-220AB • 6A, 600V at Tc = +25°c EMITTER . 600V Switching SOA Capability • Typical Fall Time - 130ns at T j = +150°C

T0-262AA

Contextual Info: HAFRRIS S E M I C O N D U C T O R RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features Description • 45A,60V The RFG45N06LE, RFP45N06LE, RF1S45N06LE, and

Contextual Info: PD-91308A In te rn a tio n a l I ö R Rectifier • • • • • • • IRLZ34NS/L Logic-Level Gate Drive Advanced Process Technology Surface Mount IRLZ34NS Low-profilethrough-hole(IRLZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated

schematic diagram inverter 12v to 24v 1000w

Abstract: 1000w class d circuit diagram schematics IRF 9234 schematic diagram inverter 12v to 24v 30a 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM 800w class d circuit diagram schematics laptop LCD inverter SCHEMATIC 12vdc to 230vac mosfet inverter 700w audio amplifier circuit diagram schematic diagram inverter 2000w
Contextual Info: POWER MANAGEMENT PRODUCT SELECTION GUIDE Volume 1 THE POWER MANAGEMENT LEADER 1 THE POWER MANAGEMENT LEADER: International Rectifier is a pioneer and world leader in advanced power management technology, from digital, analog and mixed signal ICs to advanced circuit devices, power systems, and components.

IRF1010E

Abstract: *f1010e T0-262 EIA marking code RV surface mount diode
Contextual Info: PD- 9.1720 In te rn a tio n a l I ö R Rectifier IR F 1 0 1 0 E S /L HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRF101OES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated

IRL3705

Abstract: d2p marking code
Contextual Info: International Iö R Rectifier PD -91502C IRL3705NS/L • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRL3705NS • Low-profile through-hole (IRL3705NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

IRL2505S

Contextual Info: PD -91326D In te rn a tio n a l I ö R Rectifier • • • • • • • IRL2505S/L Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL2505S Low-profile through-hole (IRL2505L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated

RF9540

Contextual Info: PD -91483C International Iö R Rectifier IRF9540NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount I RF9540S • Low-profile through-hole (IRF9540L) • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated

HGT1S20N35G3VL

Abstract: HGT1S20N35G3VLS HGTP20N35G3VL 20N35GVL 20N35 HGT1S20N35G3VLS9A IGBT DRIVER ignition coil automotive TA49076 T0-262AA T0263AB
Contextual Info: HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs December 2001 Features Packages JEDEC TO-220AB • Logic Level Gate Drive COLLECTOR EMITTER • Internal Voltage Clamp GATE COLLECTOR FLANGE • ESD Gate Protection

Contextual Info: u a q q ic HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 24A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode February 1998 Features Description • 24A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance

DSB15IM45IB

Abstract: common cathode to220 DSA20C45PB DSA30C45HB DSA30C45 DSA30C45PB DSB30C30PB DSB30C45HB DSB30C45PB DSB30C60PB
Contextual Info: □ IXYS New Generation of Silicon Schottky rectifiers VER Y LO W V f R E C T I F I E R S R A N G I N G F R O M 8 T O 2 0 0 V O L T S F O R O R 'I N G A N D S M P S A P P L I C A T I O N S March 2006 Overview: IXYS Corporation - a leader in power semiconductors for Power Conversion and Motion Control

TP20N

Abstract: T0263AB T0-262AA HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS
Contextual Info: HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS fü HARRIS S E M I C O N D U C T O R 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs April 1995 Packages Features JEDEC TO-220AB • Logic Level Gate Drive EMITTER . • Internal Voltage Clamp COLLECTOR

HGT1S20N35G3VL

Abstract: HGT1S20N35G3VLS HGTP20N35G3VL HGT1S20N35G3VLS9A T0-262AA T0263AB
Contextual Info: HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs November 2003 Features Packages JEDEC TO-220AB • Logic Level Gate Drive COLLECTOR EMITTER • Internal Voltage Clamp GATE COLLECTOR FLANGE • ESD Gate Protection

Contextual Info: MALE STRAIGHT POLARISED HEADER SMT 1548 SERIE. 1.27 x 2.54 mm. 0.050 x 0.100” . Low profile Features  •       Available in 10, 14, 16, 20, 26, 30, 34, 40, 50, 60, 68, 70, 80, 90 and 100 circuits Mates with female header 1540 Gold and phosphor bronze with different plating

74 hc 59581

Abstract: b768 transistor transistor smd 661 752 8 pin ic base socket round pin type lead 652B0082215-002 MM5231 702 transistor smd code LA9100 LGA 1155 Socket PIN diagram smd transistor w16
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