T0226A Search Results

MPF89

Abstract: MPF6659 2 watt fet MPF910 IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9110
Contextual Info: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) rds (on) @ Package FET DIP P CH TYPES 1 WATT FET DIP N CH TYPES 1 WATT T0226AE N CH TYPES 1 WATT V q S (t/h) ( '0 >DSS V(BR)DSS >GSS C|ss Crss *on 'off pk (A) Min Max Max (V) Min (nA) Max

N-Channel JFET FETs

Abstract: T072
Contextual Info: T emic S e m i c o n d u c t o r s ^ S08 T052 T0220 T0237 T092 <2 lead T092 3 lead) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode (continued) Part N um ber | Vm ¿t- (••) II - «>-•-¿j Î ' ¿.A.: T0226AA (T092) VP0300L -3 0 2.5 -4.5 30 60

2410m

Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
Contextual Info: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■

Contextual Info: B 62 9-97 J310 N -C H A N N EL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXER Absolute maximum ratings at TA * 25°C • OSCILLATOR • VHF/UHF AMPLIFIER Reverse Gate Source Voltage - 25 V Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

Contextual Info: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

BS170 MOTOROLA

Abstract: T0226 S-60
Contextual Info: BS170* CASE 29-04, STYLE 30 TO-92 T0-226AA M A X IM U M RATINGS Rating Symbol Value Unit D r a in - S o u r c e V o lta g e V DS 60 Vdc G a t e - S o u r c e V o lt a g e V GS D r a in C u r r e n t ! 1) 0 .5 'D T o t a l D e v ic e D is s ip a t io n (a T ^ = 2 5 CC

Cross Reference power MOSFET

Abstract: T0-226AE Power MOSFET Cross Reference Guide
Contextual Info: Page What's An Enhancement-Mode, Silicon Gate, Power M OSFET?. “Lateral MOSFETs vs. Vertical Devices — the big difference" . What is TMOS? .

V2101

Abstract: diode mv2105 SOT23 package diodes MV2105* equivalent
Contextual Info: MOTOROLA Order this document by MMBV2101LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical

Motorola MVAM125

Abstract: MVAM109
Contextual Info: MVAM108* MVAM109* MVAM115* MVAM125* SILICON TUNING DIODES . . d e s ig n e d fo r e le c tro n ic tu n in g o f A M re c e iv e rs a n d h ig h cap acita n ce, h ig h tu n in g ra tio a p p lic a tio n s . • H ig h C a p a c ita n c e R atio — C r = 15 M in ,

226AA

Abstract: T0-226AA T0236AB T0226AA
Contextual Info: Sm all-Signal Small-Signal DMOS Transistors % T0-236AB SOT-23 T0-226AA (TO-92) 219

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

T0-92

Contextual Info: bfiF T> bSOHBQ m General Purpose Amplifiers and Switches continued Devices V CHHsmt) (Volts) Min NPN 30 MPSW01A PHP MPSW51A Min Max NATL SEMICON]) (DISCRETE) fT @ l e,- " », Hf e @ I c •c (mA) Max □ D 3 C1SSE 73T « N S C S mA (MHz) Min M Ì NF (ÍB)

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

Contextual Info: B 59 9-97 J232 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR AUDIO AMPLIFIER Absolute maximum ratings at TA= 25'C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Process NJ16

Contextual Info: B 60 9 -9 7 J304,J305 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXERS • OSCILLATORS • VHF/UHF AMPLIFIERS A b s o lu te m a x im u m ra tin g s a t T A = 2 S ° C Reverse Gate Source & Reverse Gate Drain Voltage - 30 V Continuous Forward Gate Current

Contextual Info: B 53 9 -9 7 J1 7 6 J1 7 7 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • COMMUTATORS • ANALOG SWITCHES A bsolute m axim um ratin gs at T* = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 30 V Continuous Forward Gate Current

Contextual Info: 9 -9 7 B 51 J111, J1 1 2 , J1 1 3 ^ H A N N E ^ iu C O N U U N G n O ^ E L M ^ ^ K A N s is T O R • CHOPPERS • COMMUTATORS • ANALOG SWITCHES Absolute maximum ratings at T* = 2 5 'C Reverse Gate Source & Reverse Gate Drain Voltage - 35 V Continuous Forward Gate Current

Contextual Info: 9 -9 7 B 49 J108, J109 N - C H A N N E L S IL IC O N J U N C T IO N F IE L D -E F F E C T T R A N S IS T O R • CHOPPERS • COMMUTATORS • ANALOG SWITCHES Absolute maximum ratings at Ta = 25*0 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

Contextual Info: B 54 9 -9 7 J 2 0 1 ,J 2 0 2 N -C H A N N E L SILICO N JUNCTION FIELD-EFFECT TRANSISTOR • AUDIO AM PLIFIERS • G EN ER A L PURPOSE AM PLIFIERS Absolute maximum ratings at Ta = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 40 V Continuous Forward Gate Current

P1086

Abstract: P1087
Contextual Info: B 63 9 -9 7 P1086, PI 087 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • ANALOG SWITCHES Absolute maximum ratings at T* = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current 30 V 50 mA Continuous Device Power Dissipation

BF900

Abstract: TIS69 TIS68 P-Channel Depletion Mosfets BF905 TI570 TIS88 C2T205 TLS160 C2T206
Contextual Info: Plastic FET’s « - Case Outlines Dual Gate M osfets for VHF/UHF| N-Channel Depletion Case V (B R )D S min. V B F9 00 C 2 T 204 C2T205 C2T206 X H H H C2T211 C2T212 C2T213 B F9 05

Contextual Info: 8-94 C 2 2N7000 N -C H A N N EL ENHANCEMENT M O D E VERTICAL D M O S FET Absolute maximum ratings at TA = 25°C • FAST SWITCHING • HIGH INPUT IMPEDANCE Drain Source Voltage Gate Source Voltage Continuous Drain Current Maximum Device Power Dissipation Thermal Resistance R thjA

mpsh69

Contextual Info: • D esigned fo r UHF/VHF A m p lifie r A p p lica tio n s • H igh C urre n t B a n d w id th P roduct f y = 2000 MHz a 10 m A d c MPSH69* CASE 29-04, STYLE 1 TO-92 (T0-226AA M A X IM U M RATINGS Symbol Value Unit Collector-Emitter Voltage Rating v CEO