T-23 P CHANNEL MOSFET Search Results

stp6

Contextual Info: STT2PF60L P-CHANNEL 60V - 0.20Ω - 2A - SOT-23-6L STripFET II Power MOSFET General features Type VDSS RDS on ID 60V < 0.25Ω 2A ) s ( t c u d o ) r s Description ( P t c e t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s t b c Applications

IRLML6402

Abstract: irlml6402 sot23 ir JT2000 IRLML2803 Micro3 AN-994 IRLML2402 IRLML5103 IRLML6302 marking BSs sot23
Contextual Info: P D -93755 International 3BR Rectifier IR L M L 6 4 0 2 HEXFET Power MOSFET Ultra Low O n-R esistance P-Channel M O SFET SO T-23 Footprint Low Profile <1.1 mm A vailable in Tape and Reel Fast Switching V d s s = -2 0 V RüS(on) = 0.065Î2 Description These P-Channel MOSFETs from International Rectifier utilize

RA SOT23

Abstract: VP0610T
Contextual Info: VPDS06 P-Channel Enhancement-Mode MOSFET TYPE PACKAGE Single TO-92 TO-226AA • VP0610L, TP0610L Single SOT-23 • VP0610T, TP0610T Single Chip • Available as VPDS1CHP iTSìSSS D EVICE T Y P IC A L C H A R A C T E R IS T IC S O utput C h a ra c te ris tic s

6 r 360

Abstract: 106N20 100n20 IXFK90N20
Contextual Info: HHXYS VDSS HiPerFET Power MOSFETs IXFK 90N20 IXFN 100N20 IXFN 106N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 200 V 200 V 200 V p ^D25 DS on 90 A 23 mQ 100 A 23 mQ 106 A 20 mß t„ ^200 ns TO-264 AA (IXFK) Symbol Test Conditions

Contextual Info: International muRectifier P D - 9 .1 2 6 0 A IRLML5103 PRELIMINARY H E X F E T P ow er M O S F E T • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel M O SFET SO T-23 Footprint Low Profile <1.1 mm Available in Tape and Reel

N-Channel Depletion-Mode MOSFET

Contextual Info: LND250 P relim ina ry N-Channel Depletion-Mode MOSFET Ordering Information Order Num ber / Package Product marking for SOT-23: min TO-236AB* NDE* 1.0mA LND250K1 where * = 2-week alpha date code BVd s x / ^DS(ON) Idss B V dgx (max) 500V 1.0KQ *S am e as SO T-23. All units shipped on 3,000 piece carrier tape reels.

Contextual Info: P D -93756 International 3BR Rectifier IRLML6401 HEXFET Power MOSFET • • • • • • Ultra Low O n-R esistance P-Channel M O SFET SO T-23 Footprint Low Profile <1.1 mm A vailable in Tape and Reel Fast Switching V Dss = -12V RüS(on) = 0.05Î2 Description

2n7002 SOT23-3

Abstract: 2N7002 2N7002LT1
Contextual Info: 2N7002 MOSFET N - Channel Features Power dissipation 。 P D : 0.35 W (Tamb=25 C) Pluse Drain I D : 1300 mA Reverse Voltage V DS : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.GATE 2.SOURCER

GF2303A

Abstract: 1s sot-23
Contextual Info: GF2303A P-Channel Enhancement-Mode MOSFET TO-236AB SOT-23 t c u d o r P H C w e N N TREENFET Top View G .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) .055 (1.40) .047 (1.20) 3 Pin Configuration 0.035 (0.9) 0.079 (2.0) 0.037 (0.95) 0.037 (0.95) Dimensions in inches

100N20

Abstract: t 227 fk90 ax2002 t227 106N20 IXFK90N20
Contextual Info: p V DSS HiPerFET Power MOSFETs ix f k 90 n 20 IXFN100 N 20 IXFN106N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t ^D25 200 V 90 A 100 A 200 V 200 V 106 A trr < 200 ns DS on 23 mû 23 mQ 20 m£2 TO -264 A A (IXFK) Sym bol Test C onditions

D8P05

Abstract: rfp8p05 625Q TA09832
Contextual Info: inteikSI RFD8P05, RFD8P05SM, RFP8P05 D ata S heet J u ly 1999 BA, 50V, 0.300 Ohm, P-Channel Power MOSFETs File N u m b e r 23 84.2 Features • 8A, 5 0V T h e se products are P -C hannel pow e r M O S F E Ts m anufactured using th e M e ga F E T process. This process,

MOSFET SOT-23 marking 122

Contextual Info: GF2301 P-Channel Enhancement-Mode MOSFET Low V t c u d o r P H C w e N N TREENFET Top View G GS th TO-236AB (SOT-23) .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) .055 (1.40) .047 (1.20) 3 Pin Configuration 0.031 (0.8) 0.035 (0.9) 0.079 (2.0) 1. Gate 2. Source

mosfet low vgs

Contextual Info: GF2301 P-Channel Enhancement-Mode MOSFET Low VGS th VDS-20V RDS(ON) 0.13Ω ID -2.3A TO-236AB (SOT-23) H C N ct E ET u R d T NF ro P GE New .122 (3.1) .110 (2.8) TM .016 (0.4) Top View .037(0.95) .037(0.95) .016 (0.4) .007 (0.175) .005 (0.125) 2 max. .004 (0.1)

UT6401

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT6401 Power MOSFET 5 A, 3 0 V P-CH AN N EL EN H AN CEM EN T M ODE 3 ̈ 1 DESCRI PT I ON 2 SOT-23 The UTC UT6401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical

for IRLML2502

Abstract: application IRLML2502 mosfet ir 840 IRLML2502 marking code IRLML2502 Micro3 d1994 International Rectifier 326 sot23 marking code FH1 IRLML5103
Contextual Info: P D -93757 International 3BR Rectifier IR L M L 2 5 0 2 HEXFET Power MOSFET Ultra Low O n-R esistance N-Channel M O SFET SO T-23 Footprint Low Profile <1.1 mm A vailable in Tape and Reel Fast Switching V dss = 20V RüS(on) = 0.045Î2 Description These N-Channel MOSFETs from International Rectifier

GFC654

Abstract: marking code 54
Contextual Info: GFC654 Vishay Semiconductor New Product P-Channel Enhancement-Mode MOSFET SOT-23-6L 0.122 3.10 0.114 (2.90) H C EN ET R T ENF Pin Configuration (Top View) Top View 0.118 (3.00) 0.106 (2.70) 0.067 (1.70) 0.059 (1.50) 5 4 1 2 3 Mounting Pad Layout Dimensions in inches

P-channel Trench MOSFET

Contextual Info: < X >G e n e r a l v S e m ic o n d u c t o r _ GF2301 P-Channel Enhancement-Mode MOSFET # % LowVGS<th VDS-20V RdS(ON)0.13Q Id-2.3A TO-236AB (SOT-23) 0.031 (0.8) Hh Top View -F p - Pin Configuration 0 .0 3 5 (0.9) 0.079 (2.0) 1. Gate 2. Source

SOT23 25N

Contextual Info: TAIW AN s TSM2311 SEMICONDUCTOR 20V P-Channel MOSFET pbi RoHS CO M PLfAN C E PRODUCT SUMMARY SO T-23 P in D e fin itio n : & 1 2 Vos (V 1. Gate 2. Source 3. Drain R D S (c n )(m Q ) b (A) 55 @ VGs = -4 .5 V -4.Û 85 @ V«s - -2.5V -2.5 -20 Features Block Diagram

F634

Abstract: irf635 IRF634d IRF637
Contextual Info: IRF634, IRF635 IRF636, IRF637 23 H A R R I S N-Channel Power MOSFETs Avalanche Energy Rated A u g u st 1991 Package Features T O -22 0 A B • 8.1A and 6.5A, 250V - 275V T O P VIEW • rps on = 0.45ft and 0.68H • Single Pulse Avalanche Energy Rated • S O A is Power-Dissipatlon Limited

marking code ss

Contextual Info: BSS138 N-Channel Enhancement-Mode MOSFET Low V t c u d o r TO-236AB SOT-23 P H C w e N N RE ET T Top View NF E G GS(th) VDS 50V RDS(ON) 3.5Ω ID 220mA TM .122 (3.1) .110 (2.8) 0.031 (0.8) .016 (0.4) 0.035 (0.9) .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4)

diode SMD MARKING CODE yw

Abstract: smd diode marking 9 ba MARKING tAN SOT-23 diode
Contextual Info: PD - 9.1 2 6 0 C International lö R Rectifier IR L M L 5 1 0 3 PRELIMINARY H E XFE T Pow er M O S F E T • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1 mm Available in Tape and Reel

Contextual Info: V G eneral S e m ic o n d u c t o r _GFC6306 Dual P-Channel Logic Level Enhancement-Mode MOSFET % V d s-20V RdS ON 0.17Î2 Id-1.9A SOT-23-6L 0 .1 2 2 (3 .1 0 ) _ 0 .11 4(2.90) FR FR FR Pin Configuration (Top View) Top View T j 0-118(3.00)

"MARKING CODE SS"

Abstract: marking code SS BSS138
Contextual Info: BSS138 N-Channel Enhancement-Mode MOSFET Low V t c u d o r TO-236AB SOT-23 P H C w e N N RE FET T Top View N E G GS(th) VDS 50V RDS(ON) 3.5Ω ID 220mA .122 (3.1) .110 (2.8) 0.031 (0.8) .016 (0.4) 0.035 (0.9) .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4)

MARKING 33A DIODE SOT23

Abstract: marking code 41
Contextual Info: G en era l S e m ic o n d u c t o r _ GF3441 P-Channel Logic Level Enhancement-Mode MOSFET V ds -2 0 V SOT-23-6L 0.122 3.10 _ 0.114(2.90) am R d S(ON) 10OmQ Id -3 .3 A Pin Configuration (Top View) Top View 7 T t7! rn 0.118 (3.00) 0.106(2.70)