T-1 IR PHOTOTRANSISTOR Search Results
T-1 IR PHOTOTRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BPV11F
Abstract: National 8250
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BPV11F BPV11F 2002/95/EC 2002/96/EC 18-Jul-08 National 8250 | |
BPV11FContextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm . |
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BPV11F BPV11F 08-Apr-05 | |
BPV11FContextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm . |
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BPV11F BPV11F D-74025 08-Mar-05 | |
BPV11FContextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm . |
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BPV11F BPV11F 08-Apr-05 | |
BPV11F
Abstract: an 8249
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BPV11F BPV11F D-74025 26-Mar-04 an 8249 | |
TFK diodes
Abstract: TFK 03 diodes TFK BPW 83 IR diodes TFK 4 IR diodes TFK BPW 41 N Vishay DaTE CODE tantal tfk s 220 TFK BPW 24 TFK BPW 75 2.5/TFK BPW 83
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T-13/4 14-Aug-03 TFK diodes TFK 03 diodes TFK BPW 83 IR diodes TFK 4 IR diodes TFK BPW 41 N Vishay DaTE CODE tantal tfk s 220 TFK BPW 24 TFK BPW 75 2.5/TFK BPW 83 | |
Contextual Info: 40E D B 34cH73fl QQQISBb S B S E N I Absolute Maximum Ratings Ta = 25°C unless otherwise stated. Features • • • • T^t/f-7-3 po board mount or wire leads*1' IR-transmissive housing121 (R-220) IR-opaque housing*21 (R-225) two sensitivity ranges Description |
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H73fl R-220) R-225) R-220 R-225 R-225; | |
Contextual Info: T Z ^ Y ^1 jT , P H O T O iN T E R R U P T E R S J T ransm it typ e SG-212 SG-212B, DIMENSIONS Unit:mm F O ^ T ^ T 't o The SG-212 is a photointerrupter consisting of G aA s IR E D and phototransistor. $§ft FEATURES • S 'M I • 0.4mm aperture • Easy to mount on P.C .B. |
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SG-212 SG-212B, SG-212 | |
TEFT4300
Abstract: TSUS4300
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TEFT4300 TEFT4300 TSUS4300 2002/95/EC 2002/96/EC 08-Apr-05 | |
TEFT4300
Abstract: TSUS4300
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TEFT4300 TEFT4300 900nm) TSUS4300 2002/95/EC 2002/96/EC D-74025 08-Mar-05 | |
PLT90-BTPT
Abstract: PLT90-WCPT
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PLT90 20mw/cm2 PLT90-WCPT PLT90-BTPT PLT90-BTPT PLT90-WCPT | |
TEFT4300
Abstract: TSUS4300 Infrared emitter
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TEFT4300 TEFT4300 900nm) TSUS4300 2002/95/EC 2002/96/EC 08-Apr-05 Infrared emitter | |
SG-23FF
Abstract: SG-23FH RPC100 KT72 SG-229 h7 229 TNR SG phototransistor K-T
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SG-229 SG-229S KT-72 SG-229 30itiA SG-23FF SG-23FH RPC100 KT72 h7 229 TNR SG phototransistor K-T | |
hiif2
Abstract: 250M SG-224 SG-226 SG-227 SG-228 SG228 phototransistor K-T
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SG-224 SG-224U, SG-224 100/isec. 10msec. Ta-25Â hiif2 250M SG-226 SG-227 SG-228 SG228 phototransistor K-T | |
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MID-57422Contextual Info: T-1 3/4 PACKAGE NPN PHOTOTRANSISTOR MID-57422 Package Dimensions Description The MID-57422 is a NPN silicon phototransistor mounted in a lensed , water clear plastic package to fit wide range of IR light source. Unit : mm inches ψ5.05 (.200) 5.47 (.215) |
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MID-57422 MID-57422 40MIN. 50TYP. 00MIN. | |
TFK BPW 41 N
Abstract: IR diodes TFK BPW 41 N TFK 162 -12 TFK 705 TFK BPW 83 TFK diodes TFK 451 tfk bpw 77 TFK bpw 21 705 TFK
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T-13/4 TFK BPW 41 N IR diodes TFK BPW 41 N TFK 162 -12 TFK 705 TFK BPW 83 TFK diodes TFK 451 tfk bpw 77 TFK bpw 21 705 TFK | |
IR diodes TFK 4
Abstract: TFK 225 tfk 635 TFK diodes tfk 605 TSIP 5200 TFK BPW 41 N IR diodes TFK BPW 41 N tfk smd TFK BPW 20
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T-13/4 IR diodes TFK 4 TFK 225 tfk 635 TFK diodes tfk 605 TSIP 5200 TFK BPW 41 N IR diodes TFK BPW 41 N tfk smd TFK BPW 20 | |
tfk bpw 77
Abstract: TFK BPW 83 TFK diodes TFK 705 tfk 605 IR diodes TFK 4 TFK 451 TFK BPW 41 N BPW 83 TFK IR diodes TFK BPW 41 N
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T-13/4 tfk bpw 77 TFK BPW 83 TFK diodes TFK 705 tfk 605 IR diodes TFK 4 TFK 451 TFK BPW 41 N BPW 83 TFK IR diodes TFK BPW 41 N | |
IR diodes TFK 4
Abstract: TFK diodes IR diodes TFK BPW 41 N tfk 19 TFK 451 TFK 705 tfk 605 TSAL6200 TFK BPW 41 N TFK 52
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T-13/4 IR diodes TFK 4 TFK diodes IR diodes TFK BPW 41 N tfk 19 TFK 451 TFK 705 tfk 605 TSAL6200 TFK BPW 41 N TFK 52 | |
Contextual Info: _ S289P w m m f _ ▼ Vishay Telefunken Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epi taxial planar Darlington phototransistor in a standard T-1 0 3 mm package. The epoxy package itself is an IR filter, spectrally |
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S289P S289P 850nm. 20-May-99 S289P_ | |
LSE B3
Abstract: CLT2164 CLT2165 CLT6181 T018
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CLT6181 CLT2164 CLT2165 CLT6181, CLT2164, CLT2165 250mW i83dia- 70-tn LSE B3 T018 | |
SFH350F
Abstract: b733 Appnote40 SFH350 SIEMENS Phototransistors fiber optic phototransistor SFH350FA
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B733ci SFH350 SFH350F SFH350F) SFH350) EH4001 fl23SbOS 00S7340 SFH350F b733 Appnote40 SFH350 SIEMENS Phototransistors fiber optic phototransistor SFH350FA | |
Contextual Info: P H O T O IN T E R R U P T E R S ^ ^ J R e f le c t ty p e SG-105F S G -1 0 5 FB , a fc fl- S b t S fT T - K fc , S i t 7 ^ DIMENSIONS U n it :m m h h5> y7$ F-fe>-y-T\ x » ia i''a * t t 0 The SG-105F reflective sensor combines a G aA s IR E D with a high-sensitivity phototransistor in a super-mini |
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SG-105F SG-105F | |
52422
Abstract: MID-52422
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MID-52422 MID-52422 52422 |